AO4304

30V N-Channel MOSFET

General Description

Product Summary

The AO4304 combines advanced trench MOSFET

technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.

ID (at VGS=10V)

VDS

30V
18A

RDS(ON) (at VGS=10V)

< 6.0m

RDS(ON) (at VGS = 4.5V)

< 7.6m

100% UIS Tested

100% Rg Tested

SOIC-8
Top View

Bottom View

D
D
D
D

G
S

S
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25C

Continuous Drain
Current
Pulsed Drain Current

Units
V

20

18

ID

TA=70C

Maximum
30

14

IDM

200

Avalanche Current C

IAS, IAR

35

Avalanche energy L=0.1mH C

TA=25C

EAS, EAR

61

mJ

Power Dissipation B

Junction and Storage Temperature Range

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead

Rev 0: Oct 2010

3.6

PD

TA=70C

TJ, TSTG

Symbol
t 10s
Steady-State
Steady-State

2.3

RJA
RJL

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-55 to 150

Typ
27
52
12

Max
35
65
15

Units
C/W
C/W
C/W

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AO4304

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V
TJ=55C

Gate-Body leakage current

VDS=0V, VGS= 20V

VDS=VGS ID=250A

1.4

ID(ON)

On state drain current

VGS=10V, VDS=5V

200

100

nA

1.9

2.4

4.1

6.5

9.5

VGS=4.5V, ID=10A

7.6

VGS=10V, ID=15A
Static Drain-Source On-Resistance

TJ=125C

gFS

Forward Transconductance

VDS=5V, ID=15A

90

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.7

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Gate Threshold Voltage

Units
V

IGSS

Coss

Max

30

VDS=30V, VGS=0V

VGS(th)

RDS(ON)

Typ

m
m
S

1275

1598

1920

pF

VGS=0V, VDS=15V, f=1MHz

215

308

400

pF

90

154

215

pF

VGS=0V, VDS=0V, f=1MHz

0.7

1.5

2.3

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

19

24

29

nC

Qg(4.5V) Total Gate Charge

8.5

11.1

14

nC

5.2

6.5

nC

5.6

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

VGS=10V, VDS=15V, ID=15A

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=15A, dI/dt=500A/s

9.5

12

Qrr

Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/s

14

17.5

21

VGS=10V, VDS=15V, RL=1,

RGEN=3

7.3

ns

ns

25

ns
ns

5.3

ns
nC

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25C.
D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: Oct 2010

www.aosmd.com

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AO4304

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80

80

10V

VDS=5V

4.5V
3.5V

60

ID(A)

ID (A)

60

40

40

3V
125C

20

20

25C
VGS=2.5V
0

0
0

8
Normalized On-Resistance

RDS(ON) (m
)

2.2

VGS=4.5V

4
VGS=10V
2

2
VGS=10V
ID=15A

1.8

17
5
2
10
=4.5V

1.6
1.4
1.2

VGS
ID=10A

1
0.8

0
0

10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

16

25

50

75

100

125

150

175

200

0
Temperature (C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

1.0E+02
ID=15A

14

1.0E+01

40

12

1.0E+00

10
IS (A)

RDS(ON) (m
)

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

125C
8

125C

1.0E-01
1.0E-02

25C

1.0E-03

4
2

1.0E-04

25C

1.0E-05
2

6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev 0: Oct 2010

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0.0

0.2

0.4

0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

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AO4304

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

2500

2000
VDS=15V
ID=15A

Capacitance (pF)

VGS (Volts)

Ciss
1500

1000

Coss

500
Crss

0
0

10

15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics

30

30

1000.0
TA=100C

100

100.0

TA=25C

ID (Amps)

IAR (A) Peak Avalanche Current

1000

5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

TA=125C
10

10.0

1ms

RDS(ON)
limited

10ms
10ms
1.0

TA=150C

DC
TJ(Max)=150C
TA=25C

0.1

10s

0.0

1
1

10
100
Time in avalanche, tA (
s)
Figure 9: Single Pulse Avalanche capability
(Note C)

0.01

1000

0.1

1
VDS (Volts)

10

100

Figure 10: Maximum Forward Biased

Safe Operating Area (Note F)

10000
TA=25C

Power (W)

1000

100

10

1
0.00001

0.001

0.1

10

1000

Pulse Width (s)

Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

Rev 0: Oct 2010

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Page 4 of 6

AO4304

Z JA Normalized Transient
Thermal Resistance

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RJA=65C/W

0.1
PD

0.01
Single Pulse

Ton

0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0: Oct 2010

www.aosmd.com

Page 5 of 6

AO4304

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+
+ Vds

VDC

Qgs

Qgd

VDC

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds
90%

+ Vdd

DUT

Vgs

VDC

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

E AR = 1/2 LIAR

Vds

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT

Vds Isd
Vgs
Ig

Rev 0: Oct 2010

Vgs

Isd

+ Vdd

t rr

dI/dt
I RM
Vdd

VDC

IF

Vds

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Page 6 of 6