APPENDIX D

DB3 DB4 SMDB3

DIAC

FEATURES

VBO : 32V and 40V

LOW BREAKOVER CURRENT

DO-35
(DB3 and DB4)

DESCRIPTION
Functioning as a trigger diode with a fixed voltage
reference, the DB3/DB4 series can be used in
conjunction with triacs for simplified gate control
circuits or as a starting element in fluorenscent
lamp ballasts.
A new surface mount version is now available in
SOT-23 package, providing reduced space and
compatibility with automatic pick and place
equipment.

2
3
1

SOT-23
(SMDB3)*
Pin 1 and 3 must be shorted
together

ABSOLUTE MAXIMUM RATINGS (limiting values)

Symbol
ITRM

Tstg
Tj

Parameter
Repetitive peak on-state current
tp = 20 s
F= 120 Hz

Storage temperature range

Operating junction temperature range

Value

Unit

SMDB3

1.00

DB3 / DB4

2.00
- 40 to + 125

Note: * SMDB3 indicated as Preliminary spec as product is still in development stage.

October 2001 - Ed: 2B

1/5

DB3 DB4 SMDB3

ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise specified)
Symbol

Parameter

Test Conditions

VBO

Breakover voltage *

C = 22nF **

SMDB3

DB3

DB4

Unit

MIN.

28

28

35

TYP.

32

32

40

MAX.

36

36

45

I VBO1 - VBO2 I

Breakover voltage
symmetry

C = 22nF **

MAX.

Dynamic breakover
voltage *

VBO and VF at 10mA

MIN.

10

VO

Output voltage *

see diagram 2
(R=20)

MIN.

10

IBO

Breakover current *

C = 22nF **

MAX.

10

50

see diagram 3

MAX.

0.50

VR = 0.5 VBO max

MAX.

10

see diagram 2 (Gate)

MIN.

0.30

tr

Rise time *

IR

Leakage current *

IP

Peak current *

* Applicable to both forward and reverse directions.

** Connected in parallel to the device.

PRODUCT SELECTOR
VBO

Package

SMDB3

28 - 36

SOT-23

DB3

28 - 36

DO-35

DB4

35 - 45

DO-35

Part Number

ORDERING INFORMATION

SM DB 3
Surface
Mount
Version

Breakover voltage
3: VBO typ = 32V
4: VBO typ = 40V
Diac Series

2/5

DB3 DB4 SMDB3

OTHER INFORMATION
Part Number

Marking

Weight

Base Quantity

Packing Mode

SMDB3

DB3

0.01 g

3000

Tape & Reel

DB3

DB3 (Blue Body Coat)

0.15 g

5000

Tape & Reel

DB4

DB4 (Blue Body Coat)

0.15 g

5000

Tape & Reel

Diagram 1: Voltage - current characteristic curve.

Diagram 2: Test circuit.

10 k

220 V

+ IF

500 k

D.U.T

Rs=0

C=0.1F

50 Hz

Vo

10mA

T410
R=20

-V

IBO
IB

+ V

Diagram 3: Rise time measurement.

0,5 VBO
V
VF

lp
VBO

90 %

- IF

10 %
tr

3/5

DB3 DB4 SMDB3

Fig. 1: Relative variation of VBO versus junction
temperature (typical values).

Fig. 2: Repetitive peak pulse current versus pulse

duration (maximum values).
ITRM(A)

VBO [Tj] / VBO [Tj=25C]

20.0

1.10
1.05

F=120Hz
Tj initial=25C

10.0

DB3/DB4

DB3/DB4

1.00
0.95

SMDB3

1.0

SMDB3

0.90
0.85

tp(s)

Tj(C)
0.80
25

50

75

100

125

0.1

10

100

Fig. 3: Time duration while current pulse is higher

50mA versus C and Rs (typical values).

tp(s)
40
Tj=25C

68

35
30

47

25

33

20
15
22

10
10

5
0
10

C(nF)

20

50

100

200

500

PACKAGE MECHANICAL DATA (in millimeters)

DO-35

REF.
C

O
/D

4/5

O
/D

DIMENSIONS
Millimeters

O
/ B

Inches

Min.

Max.

Min.

Max.

3.05

4.50

0.120

0.177

1.53

2.00

0.060

0.079

28.00

0.458

1.102
0.558

0.018

0.022

DB3 DB4 SMDB3

PACKAGE MECHANICAL DATA (in millimeters)
SOT-23
REF.

DIMENSIONS
Millimeters

e
D

e1

Inches

Min.

Max.

Min.

Max.

0.89

1.4

0.035

0.055

A1

0.1

0.004

0.3

0.51

0.012

0.02

0.085

0.18

0.003

0.007

2.75

3.04

0.108

0.12

0.85

1.05

0.033

0.041

e1

1.7

2.1

0.067

0.083

1.2

1.6

0.047

0.063

2.1

2.75

0.083

0.108

A1

0.6 typ.

0.024 typ.

0.35

0.65

0.014

0.026

FOOTPRINT
0.9
0.035
1.1
0.043

0.9
0.035

2.35
0.92

1.9
0.075
mm
inch

1.1
0.043

1.45
0.037

0.9
0.035

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5

APPENDIX C

2N6504 Series
Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for halfwave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
http://onsemi.com

Features

Glass Passivated Junctions with Center Gate Fire for Greater

SCRs
25 AMPERES RMS
50 thru 800 VOLTS

Parameter Uniformity and Stability

Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Pb-Free Packages are Available*

G
A

MARKING
DIAGRAM

4
TO-220AB
CASE 221A
STYLE 3

2N650xG
AYWW

1
2
3
x
A
Y
WW
G

= 4, 5, 7, 8 or 9
= Assembly Location
= Year
= Work Week
= Pb-Free Device

PIN ASSIGNMENT
1

Cathode

Anode

Gate

Anode

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.

*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2008

April, 2006 - Rev. 8

Publication Order Number:

2N6504/D

2N6504 Series
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Symbol

Rating

Value

Unit

*Peak Repetitive Off-State Voltage (Note 1)

(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125C)
2N6504
2N6505
2N6507
2N6508
2N6509

VDRM,
VRRM

OnState Current RMS (180 Conduction Angles; TC = 85C)

IT(RMS)

25

Average OnState Current (180 Conduction Angles; TC = 85C)

IT(AV)

16

Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100C)

ITSM

250

Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 85C)

PGM

20

PG(AV)

0.5

50
100
400
600
800

Forward Average Gate Power (t = 8.3 ms, TC = 85C)

Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 85C)

IGM

2.0

Operating Junction Temperature Range

TJ

-40 to +125

Storage Temperature Range

Tstg

-40 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS
Characteristic

Symbol

*Thermal Resistance, Junction-to-Case

*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds

Max

Unit

RqJC

1.5

C/W

TL

260

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

10
2.0

mA
mA

VTM

1.8

IGT

9.0
-

30
75

mA

*Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = -40C)

VGT

1.0

1.5

Gate NonTrigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125C)

VGD

0.2

*Holding Current
TC = 25C
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = -40C

IH

18
-

40
80

mA

*TurnOn Time (ITM = 25 A, IGT = 50 mAdc)

tgt

1.5

2.0

ms

TurnOff Time (VDRM = rated voltage)

(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125C)

tq
-

15
35

50

OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)

TJ = 25C
TJ = 125C

IDRM,
IRRM

ON CHARACTERISTICS
*Forward On-State Voltage (Note 2) (ITM = 50 A)
*Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 W)

TC = 25C
TC = -40C

ms

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage (Gate Open, Rated VDRM, Exponential Waveform)
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.

http://onsemi.com
2

dv/dt

V/ms

2N6504 Series
Voltage Current Characteristic of SCR
+ Current

Symbol

Parameter

VDRM

Peak Repetitive Off State Forward Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Off State Reverse Voltage

IRRM

Peak Reverse Blocking Current

VTM

Peak On State Voltage

IH

Holding Current

Anode +
VTM

on state
IH

IRRM at VRRM

Reverse Blocking Region

(off state)
Reverse Avalanche Region

+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)

13
0

32
P(AV) , AVERAGE POWER (WATTS)

TC , MAXIMUM CASE TEMPERATURE ( C)

Anode -

12
0

= CONDUCTION ANGLE

110

10
0
= 30

90

60

90

180

dc

80

= CONDUCTION ANGLE 60
= 30

24

180
90

dc

16
TJ = 125C
8.0

0
0

4.0

8.0
12
16
IT(AV), ONSTATE FORWARD CURRENT (AMPS)

20

Figure 1. Average Current Derating

4.0
8.0
12
16
IT(AV), AVERAGE ONSTATE FORWARD CURRENT (AMPS)

20

Figure 2. Maximum On-State Power Dissipation

http://onsemi.com
3

2N6504 Series
100
70
50
30
125C

25C
10
7.0
5.0
3.0
2.0
300
I TSM , PEAK SURGE CURRENT (AMP)

iF , INSTANTANEOUS FORWARD CURRENT (AMPS)

20

1.0
0.7
0.5
0.3
0.2

0.1
0

0.4

0.8
1.2
1.6
2.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)

2.4

1 CYCLE
275

250

225
TC = 85C
f = 60 Hz
200
175
1.0

2.8

2.0

3.0

4.0

6.0

8.0

10

NUMBER OF CYCLES

Figure 3. Typical On-State Characteristics

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SURGE IS PRECEDED AND

FOLLOWED BY RATED CURRENT

Figure 4. Maximum Non-Repetitive Surge Current

1.0
0.7
0.5
0.3
0.2

ZqJC(t) = RqJC r(t)

0.1
0.07
0.05
0.03
0.02
0.01
0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

50
20 30
t, TIME (ms)

100

Figure 5. Thermal Response

http://onsemi.com
4

200 300

500

1.0 k

2.0 k 3.0 k 5.0 k

10 k

2N6504 Series
TYPICAL TRIGGER CHARACTERISTICS

VGT, GATE TRIGGER VOLTAGE (VOLTS)

1.0

10

1
-40 -25

-10

5
20
35
50 65
80
TJ, JUNCTION TEMPERATURE (C)

95

0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10

110 125

20

35

65

80

95

Figure 7. Typical Gate Trigger Voltage

versus Junction Temperature

100

10

1
-40 -25 -10

50

TJ, JUNCTION TEMPERATURE (C)

Figure 6. Typical Gate Trigger Current

versus Junction Temperature

IH , HOLDING CURRENT (mA)

I GT, GATE TRIGGER CURRENT (mA)

100

20

35

50

65

80

95

TJ, JUNCTION TEMPERATURE (C)

Figure 8. Typical Holding Current

versus Junction Temperature

http://onsemi.com
5

110 125

110 125

2N6504 Series
ORDERING INFORMATION
Device

Package

2N6504

TO-220AB

2N6504G

TO-220AB
(Pb-Free)

2N6505

TO-220AB

2N6505G

TO-220AB
(Pb-Free)

2N6505T

TO-220AB

2N6505TG

TO-220AB
(Pb-Free)

2N6507

TO-220AB

2N6507G

TO-220AB
(Pb-Free)

2N6507T

TO-220AB

2N6507TG

TO-220AB
(Pb-Free)

2N6508

TO-220AB

2N6508G

TO-220AB
(Pb-Free)

2N6508TG

TO-220AB
(Pb-Free)

2N6509

TO-220AB

2N6509G

TO-220AB
(Pb-Free)

2N6509T

TO-220AB

2N6509TG

TO-220AB
(Pb-Free)

http://onsemi.com
6

Shipping

500 Units / Box

50 Units / Rail

500 Units / Box

50 Units / Rail

500 Units / Box

50 Units / Rail

500 Units / Box

50 Units / Rail

2N6504 Series
PACKAGE DIMENSIONS

TO-220AB
CASE 221A-07
ISSUE AA
-TB

SEATING
PLANE

C
S

A
U

1 2 3

H
K
Z
R

L
V

G
D
N

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

STYLE 3:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

CATHODE
ANODE
GATE
ANODE

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: orderlit@onsemi.com

N. American Technical Support: 800-282-9855 Toll Free

USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5773-3850

http://onsemi.com
7

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative

2N6504/D

APPENDIX B

MAC15 Series
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solidstate relays, motor controls, heating controls and power
supplies; or wherever fullwave silicon gate controlled solidstate
devices are needed. Triac type thyristors switch from a blocking to a
conducting state for either polarity of applied main terminal voltage
with positive or negative gate triggering.

http://onsemi.com

TRIACS
15 AMPERES RMS
400 thru 800 VOLTS

Features

Blocking Voltage to 800 V

All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or
Four Modes (MAC15A Series)
These Devices are PbFree and are RoHS Compliant*

MT2

MARKING
DIAGRAM

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating

Symbol

Peak Repetitive OffState Voltage Note 1

(TJ = 40 to +125C, Sine Wave 50 to 60 Hz,
Gate Open)
MAC15A6G
MAC158G, MAC15A8G
MAC1510G, MAC15A10G

VDRM,
VRRM

Peak Gate Voltage

(Pulse Width v 1.0 msec; TC = 90C)

4
Value

Unit

400
600
800

10

OnState Current RMS; Full Cycle Sine

Wave 50 to 60 Hz (TC = +90C)

IT(RMS)

15

Circuit Fusing Consideration (t = 8.3 ms)

I2t

93

A2s

Peak NonRepetitive Surge Current (One

Full Cycle Sine Wave, 60 Hz, TC = +80C)
Preceded and Followed by Rated Current

ITSM

150

Peak Gate Power

(TC = +80C, Pulse Width = 1.0 ms)

PGM

20

PG(AV)

0.5

IGM

2.0

Peak Gate Current

(Pulse Width v 1.0 msec; TC = 90C)
Operating Junction Temperature Range

TJ

40 to +125

Storage Temperature Range

Tstg

40 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012

September, 2012 Rev. 5

TO220AB
CASE 221A
STYLE 4

VGM

Average Gate Power (TC = +80C, t = 8.3 ms)

MT1
G

MAC15xxG
AYWW

MAC15xx
xx
A
Y
WW
G

= Specific Device Code

= See Table on Page 2
= Assembly Location (Optional)*
= Year
= Work Week
= PbFree Package

* The Assembly Location code (A) is optional. In

cases where the Assembly Location is stamped
on the package the assembly code may be blank.

PIN ASSIGNMENT
1

Main Terminal 1

Main Terminal 2

Gate

Main Terminal 2

ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.

Publication Order Number:

MAC15A4/D

MAC15 Series
THERMAL CHARACTERISTICS
Symbol

Value

Unit

Thermal Resistance, JunctiontoCase

Characteristic

RqJC

2.0

C/W

Thermal Resistance, JunctiontoAmbient

RqJA

62.5

C/W

TL

260

Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic

Symbol

Min

Typ

Max

Unit

IDRM,
IRRM

10
2.0

mA
mA

Peak OnState Voltage Note 2 (ITM = "21 A Peak)

VTM

1.3

1.6

Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 W)

MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+) A SUFFIX ONLY

IGT

50
50
50
75

Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 W)

MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+) A SUFFIX ONLY

VGT

0.9
0.9
1.1
1.4

2
2
2
2.5

Gate NonTrigger Voltage (VD = 12 V, RL = 100 W) TJ = 110C)

MT2(+), G(+); MT2(), G(); MT2(+), G()
MT2(), G(+) A SUFFIX ONLY

VGD

0.2
0.2

OFF CHARACTERISTICS
Peak Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25C
TJ = 125C

ON CHARACTERISTICS

mA

Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)

IH

6.0

40

mA

Turn-On Time (VD = Rated VDRM, ITM = 17 A)

(IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)

tgt

1.5

ms

dv/dt(c)

5.0

V/ms

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A,
Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80C)
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.

ORDERING INFORMATION
Device
MAC158G
MAC1510G
MAC15A6G
MAC15A8G
MAC15A10G

Device Marking

Package

MAC158

TO220AB
(PbFree)

MAC1510

TO220AB
(PbFree)

MAC15A6

TO220AB
(PbFree)

MAC15A8

TO220AB
(PbFree)

MAC15A10

TO220AB
(PbFree)

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2

Shipping

500 Units Bulk

MAC15 Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current

Symbol

Parameter

VTM

VDRM

Peak Repetitive Forward Off State Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Reverse Off State Voltage

IRRM

Peak Reverse Blocking Current

VTM

Maximum On State Voltage

IH

Holding Current

on state
IRRM at VRRM

IH
Quadrant 3
MainTerminal 2

IH

off state

VTM

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2

Quadrant II

(+) MT2

() IGT
GATE

Quadrant I

(+) IGT
GATE
MT1

MT1

REF

REF
IGT

+ IGT
() MT2

Quadrant III

() MT2

Quadrant IV

(+) IGT
GATE

() IGT
GATE

MT1

MT1

REF

REF

MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With inphase signals (using standard AC lines) quadrants I and III are used.

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3

Quadrant 1
MainTerminal 2 +

+ Voltage
IDRM at VDRM

MAC15 Series
20
PAV, AVERAGE POWER (WATTS)

TC, CASE TEMPERATURE (C)

130
= 30
= 60

120

= 90

110
= 180

100

dc

90

TJ 125

= CONDUCTION ANGLE

80
0

120

TJ 125

16

dc

90

12

60

30

8 = CONDUCTION ANGLE

4
0

10

12

14

16

10

12

14

IT(RMS), RMS ON-STATE CURRENT (AMP)

IT(RMS), ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating

Figure 2. OnState Power Dissipation

1.8

16

50
OFF-STATE VOLTAGE = 12 V

IGT, GATE TRIGGER CURRENT (mA)

VGT, GATE TRIGGER VOLTAGE (VOLTS)

= 180

1.6
1.4
QUADRANT 4

1.2
1.0
0.8
QUADRANTS
0.6
0.4
-60

1
2
3

-40

-20

20

40

60

80

100

120

OFF-STATE VOLTAGE = 12 V
30
20

10

1
2
QUADRANT 3

7.0
5.0
-60

140

TJ, JUNCTION TEMPERATURE (C)

4
-40

-20

20

40

60

80

100

120

TJ, JUNCTION TEMPERATURE (C)

Figure 4. Typical Gate Trigger Current

Figure 3. Typical Gate Trigger Voltage

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4

140

MAC15 Series
100

20

I H, HOLDING CURRENT (mA)

50

TJ = 25C
125C

30

10
7.0
5.0
MAIN TERMINAL #2
POSITIVE
3.0

10

2.0
-60

-40

-20

20

40

60

80

100

120

140

TJ, JUNCTION TEMPERATURE (C)

Figure 6. Typical Holding Current

3
2
300
1

TSM, PEAK SURGE CURRENT (AMP)

i TM, INSTANTANEOUS FORWARD CURRENT (AMP)

20

GATE OPEN

MAIN TERMINAL #1
POSITIVE

70

0.7
0.5

0.3
0.2

200

100
70
TC = 80C
Tf = 60 Hz

50

Surge is preceded and followed by rated current

0.1
0.4

30
0.8

1.2

1.6

2.4

2.8

3.2

3.6

4.4

vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

NUMBER OF CYCLES

Figure 5. OnState Characteristics

Figure 7. Maximum NonRepetitive

Surge Current

10

r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

1
0.5

ZqJC(t) = r(t) RqJC

0.2
0.1
0.05

0.02
0.01
0.1

0.2

0.5

10

20

50

100

t, TIME (ms)

Figure 8. Thermal Response

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5

200

500

1k

2k

5k

10 k

MAC15 Series
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG

T
B

SEATING
PLANE

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

1 2 3

H
K

Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

STYLE 4:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative

MAC15A4/D

APPENDIX A

BUL216

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
HIGH OPERATING JUNCTION
TEMPERATURE
HIGH RUGGEDNESS
3

APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL216 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

V CES

Collector-Emitter Voltage (V BE = 0)

V CEO

Collector-Emitter Voltage (I B = 0)

V EBO

Emitter-Base Voltage (I C = 0)

Collector Current

Collector Peak Current (t p < 5 ms)

IC
I CM

1600

800

Base Current

I BM

Base Peak Current (t p < 5 ms)

P tot

Total Dissipation at T c = 25 o C

90

IB

T stg
Tj

June 2001

Storage Temperature
Max. Operating Junction Temperature

-65 to 150

150

1/6

BUL216
THERMAL DATA
R thj-case
R thj-amb

Thermal Resistance Junction-Case

Thermal Resistance Junction-Ambient

Max
Max

1.39
62.5

C/W
C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

100
500

A
A

250

I CES

Collector Cut-off
Current (V BE = 0)

V CE = 1600 V
V CE = 1600 V

I CEO

Collector Cut-off
Current (I B = 0)

V CE = 800 V

Collector-Emitter
Sustaining Voltage

I C = 100 mA

Emitter-Base Voltage
(I C = 0)

I E = 10 mA

V CE(sat)

Collector-Emitter
Saturation Voltage

IC = 1 A
IC = 2 A

I B = 0.2 A
I B = 0.66 A

1
3

V
V

V BE(sat)

Base-Emitter
Saturation Voltage

IC = 1 A
IC = 2 A

I B = 0.2 A
I B = 0.66 A

1.2
1.2

V
V

DC Current Gain

I C = 0.4 A
I C = 10 mA

ts
tf

INDUCTIVE LOAD
Storage Time
Fall Time

I C = 1.5 A
V BE(off) = -5 V
V CL = 250 V

I B1 = 0.5 A
R BB = 0
L = 200 H

2.1
450

ts
tf

INDUCTIVE LOAD
Storage Time
Fall Time

I C = 1.5 A
V BE(off) = -5 V
V CL = 250 V
T j = 100 o C

I B1 = 0.5 A
R BB = 0
L = 200 H

3
600

VCEO(sus)
V EBO

h FE

T j = 125 o C

L = 25 mH

V CE = 5 V
VCE = 5 V

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Areas

2/6

Derating Curve

800

12
10

40

3.3
720

s
ns
s
ns

BUL216
DC Current Gain

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Inductive Fall Time

Inductive Storage Time

3/6

BUL216
Inductive Fall Time

Inductive Storage Time

Reverse Biased SOA

RBSOA and Inductive Load Switching Test

Circuits

(1) Fast electronic switch

(2) Non-inductive Resistor
(3) Fast recovery rectifier

4/6

BUL216

TO-220 MECHANICAL DATA

DIM.

mm
MIN.

TYP.

inch
MAX.

MIN.

TYP.

MAX.

4.40

4.60

0.173

0.181

1.23

1.32

0.048

0.052

2.40

2.72

0.094

0.107

0.49

0.70

0.019

0.027

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

4.95

5.15

0.194

0.202

G1

2.40

2.70

0.094

0.106

H2

10.00

10.40

0.394

L2
L4

16.40
13.00

0.409
0.645

14.00

0.511

0.551
0.116

L5

2.65

2.95

0.104

L6

15.25

15.75

0.600

0.620

L7

6.20

6.60

0.244

0.260

L9

3.50

3.93

0.137

0.154

3.85

0.147

M
DIA.

2.60
3.75

0.102
0.151

P011CI
5/6

BUL216

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2001 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com

6/6