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PECVD: Advanced Deposition Techniques

Plasma enhanced chemical vapor deposition (PECVD) is a CVD process that uses a plasma to deposit thin films onto substrates at low temperatures. In PECVD, a gas is introduced into a vacuum chamber and ionized by plasma generated through electric fields. Electron bombardment from the plasma causes the gas particles to absorb and form a layer on the substrate. Using a plasma allows film deposition at lower temperatures than regular CVD and provides better step coverage and dielectric properties of deposited layers. However, PECVD equipment is more expensive than CVD. PECVD is commonly used to deposit silicate layers for solar cells, optics, and integrated circuits.
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0% found this document useful (0 votes)
343 views16 pages

PECVD: Advanced Deposition Techniques

Plasma enhanced chemical vapor deposition (PECVD) is a CVD process that uses a plasma to deposit thin films onto substrates at low temperatures. In PECVD, a gas is introduced into a vacuum chamber and ionized by plasma generated through electric fields. Electron bombardment from the plasma causes the gas particles to absorb and form a layer on the substrate. Using a plasma allows film deposition at lower temperatures than regular CVD and provides better step coverage and dielectric properties of deposited layers. However, PECVD equipment is more expensive than CVD. PECVD is commonly used to deposit silicate layers for solar cells, optics, and integrated circuits.
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Plasma Enhanced Chemical

Vapor Deposition (PECVD)


Pathros Cardenas & David Tung

What is Chemical Vapor


Deposition?

What is Plasma Enhanced Chemical


Vapor Deposition?

CVD process that uses plasma


Uses cold plasma
Keeps wafers at low temperatures
Enhances properties of layers being
deposited

What is a Plasma?

Ionized gas
High free electron content
Unique state of matter
Electric fields energize plasma
Cold plasma (not in thermal
equilibrium)

Where can we find Plasma?

The Reaction

Gas is introduced
Ionized by plasma
Diffusions of particles through sheath
Electron bombardment onto substrate
Absorption of particles
Layer formation

PECVD Reactors

Parallel plate reactor


Inductive coupling reactor
Advanced parallel plate reactor
Tubular reactor

Parallel plate reactor

Advanced parallel plate reactor


Double sided vertical holder reactor

Tubular reactor

Advantages of using PECVD


Low operation temperature
Lower chances of cracking deposited
layer
Good dielectric properties of
deposited layer
Good step coverage
Less temperature dependent

Disadvantages of using PECVD


Toxic byproducts
High cost of equipment

Applications
Deposition of silicate layers
Deposition of dopants
Anti-reflection and anti-scratch layers
in optics
Solar cells -> amorphous silicon

Conclusion
PECVD is not a replacement for CVD
PECVD can give better layer quality
than CVD
PECVD has a wide variety applications
PECVD process costs can be
prohibitive

References

1. "Chemical Vapor Deposition." Wikipedia. 27 Sept. 2007. 11 Oct. 2007


<http://en.wikipedia.org/wiki/Chemical_vapor_deposition>.
2. Jaeger, Richard C. Introduction to Microelectronic Fabrication. 2nd ed. Vol. 5. Upper
Saddle River, NJ: Prentice Hall, 2002. 136-141.
3. Konuma, Mitsuharu. Film Deposition by Plasma Techniques. Berlin: Spring-Verlag,
1992.
4. Konuma, Mitsuharu. Plasma Techniques for Film Deposition. Harrow, U.K.: Alpha
Science International Ltd., 2005.
5. "PECVD Process." MicroFAB BREMEN GMBH. 17 May 2004. 14 Oct. 2007
<http://www.microfab.de/services/pecvd.htm>.
6. "Plasma (Physics)." Wikipedia. 15 Oct. 2007. 12 Oct. 2007
<http://en.wikipedia.org/wiki/Plasma_%28physics%29>.
7. "Plasma-Enhanced Chemical Vapor Deposition." Wikipedia. 30 Aug. 2007. 11 Oct.
2007 <http://en.wikipedia.org/wiki/Plasma_Enhanced_Chemical_Vapor_Deposition>.
8. "Plasma Enhanced CVD." Hitech-Projects. 2007. 14 Oct. 2007 <http://www.hitechprojects.com/dts/docs/pecvd.htm>.
9. Sherman, Arthur. Chemical Vapor Deposition for Microelectronics Principles,
Technology, and Applications. Park Ridge, NJ: Noyes Publications, 1987.

QUESTIONS?

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