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K2645 01MR Fuji

This document provides specifications and performance characteristics for the FAP-2S series N-channel silicon power MOSFET from Fuji Power. The MOSFET has a maximum drain-source voltage of 600V, continuous drain current of 9A, and pulsed drain current of 32A. It features low on-resistance, no secondary breakdown, low driving power, and avalanche-proof capability. Applications include switching regulators, UPS systems, and DC-DC converters. Tables provide information on maximum ratings, electrical characteristics, thermal characteristics, and typical output/transfer characteristics as functions of drain-source voltage, gate-source voltage, temperature, and other variables.

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Gheorghe Silviu
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431 views4 pages

K2645 01MR Fuji

This document provides specifications and performance characteristics for the FAP-2S series N-channel silicon power MOSFET from Fuji Power. The MOSFET has a maximum drain-source voltage of 600V, continuous drain current of 9A, and pulsed drain current of 32A. It features low on-resistance, no secondary breakdown, low driving power, and avalanche-proof capability. Applications include switching regulators, UPS systems, and DC-DC converters. Tables provide information on maximum ratings, electrical characteristics, thermal characteristics, and typical output/transfer characteristics as functions of drain-source voltage, gate-source voltage, temperature, and other variables.

Uploaded by

Gheorghe Silviu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SK2645-01MR

www.DataSheet4U.com

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

FAP-2S Series

Outline Drawings
TO-220F

Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

Equivalent circuit schematic

(Tc=25C unless otherwise specified)


Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range

Symbol
V DS
ID
ID(puls]
VGS
IAR *2
EAS *1
PD
Tch
Tstg

Ratings
600
9
32
35
9
71.9
50
+150
-55 to +150

*1 L=1.63mH, Vcc=60V

Unit

Drain(D)

V
A
A
V
A
mJ
W
C
C

Gate(G)
Source(S)

<
*2 Tch=150C

Electrical characteristics (Tc =25C unless otherwise specified)


Item
Drain-source breakdown voltaget
Gate threshold voltage

Symbol
V(BR)DSS
VGS(th)

Zero gate voltage drain current

IDSS

Gate-source leakage current


Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton

IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
V SD
t rr
Qrr

Turn-off time toff


Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge

Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=600V
VGS=0V
VGS=35V VDS=0V
ID=4.5A VGS=10V

Min.
600
3.5
Tch=25C
Tch=125C

ID=4.5A VDS=25V
VDS =25V
VGS=0V
f=1MHz
VCC=300V ID=9A
VGS=10V

2.5

RGS=10
L=100 H Tch=25C
IF=2xIDR VGS=0V Tch=25C
IF=IDR VGS=0V
-di/dt=100A/s Tch=25C

Typ.
4.0
10
0.2
10
1.0
5.0
900
150
70
25
70
60
35

Max.
4.5
500
1.0
100
1.2
1400
230
110
40
110
90
60

9
1.0
550
7.0

1.5

Units
V
V
A
mA
nA

S
pF

ns

A
V
ns
C

Thermalcharacteristics
Item
Thermal resistance

Symbol
Rth(ch-c)
Rth(ch-a)

Test Conditions
channel to case
channel to ambient

Min.

Typ.

Max.

Units

2.5
62.5

C/W
C/W

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2SK2645-01MR

FUJI POWER MOSFET

Characteristics
Power Dissipation
PD=f(Tc)

70

Safe operating area


ID=f(VDS):D=0.01,Tc=25C

60
10

t=0.01 s
DC

50

1s

ID [A]

PD [W]

10 s

40

30

10

100 s

1ms

10ms

20

10

-1

t
D=

10

100ms

t
T

50

100

10

150

-2

10

10

10

10

VDS [V]

Tc [ C]

Typical output characteristics

Typical transfer characteristic

ID=f(VDS):80s Pulse test,Tch=25C

ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C

20
VGS=20V
10V

ID [A]

ID [A]

10

8V

15

10
7V

10

6.5V

10

-1

10

-2

6V
5.5V
5V

0
0

10

15

20

25

30

35

VDS [V]

10

VGS [V]

Typical drain-source on-state resistance

Typical forward transconductance

RDS(on)=f(ID):80s Pulse test, Tch=25C

gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C

9 VGS=
5V
5.5V 6V
8

6.5V

7V

7
10

gfs [s]

RDS(on) [ ]

10

5
4
3
8V

10V
20V

10

-1

10

-1

10

10

ID [A]

10

15

20

ID [A]

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2SK2645-01MR

FUJI POWER MOSFET

Drain-source on-state resistance


RDS(on)=f(Tch):ID=4.5A,VGS=10V

Gate threshold voltage


VGS(th)=f(Tch):ID=1mA,VDS=VGS

4.0

6.0

3.5
5.0
3.0
max.
4.0

2.0

VGS(th) [V]

RDS(on) [ ]

2.5

max.

1.5

typ.

typ.
min.

3.0

2.0

1.0
1.0

0.5
0.0

0.0
-50

50

100

150

-50

50

100

150

Tch [ C]

Tch [ C]

Typical capacitances
C=f(VDS):VGS=0V,f=1MHz

Typical gate charge characteristic


VGS=f(Qg):ID=9A,Tch=25C
10n

50

500
Vcc=480V
450

45

400

40

0V
12
c= V
Vc 300 V
0
48

300V

VDS [V]

30

250

25

200

20

1n

VGS [V]

300

35

Ciss

C [F]

350

Coss
100p

150

15

120V

100

10

50

20

40

60

80

100

120

Crss

10p

0
140

10

-2

10

-1

10

10

10

VDS [V]

Qg [nC]

Forward characteristic of reverse of diode

Avalanche energy derating

IF=f(VSD):80s Pulse test,VGS=0V

Eas=f(starting Tch):Vcc=60V,IAV=9A
100

10

80
o

Tch=25 C typ.

10

Eas [mJ]

IF [A]

60

10

40

-1

20

10

-2

0.0

0.2

0.4

0.6

0.8

VSD [V]

1.0

1.2

1.4

50

100

150

Starting Tch [ C]

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2SK2645-01MR

FUJI POWER MOSFET

Transient thermal impedande


Zthch=f(t) parameter:D=t/T

10

D=0.5
0

Zthch-c [K/W]

10

0.2
0.1
0.05
10 0.02
-1

t
D=

0.01

t
T

0
-2

10
-5
10

-4

10

-3

10

-2

10

-1

10

10

10

t [s]

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