BSS 101

SIPMOS Small-Signal Transistor

N channel
Enhancement mode
Logic Level
VGS(th) = 0.8...2.0V

Pin 1 Pin 2 Pin 3

S G D

Type VDS ID RDS(on) Package Marking

BSS 101 240 V 0.13 A 16 TO-92 SS 101

Type Ordering Code Tape and Reel Information
BSS 101 Q62702-S493 E6288
BSS 101 Q62702-S636 E6325

Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 240 V
Drain-gate voltage V
DGR
RGS = 20 k 240
Gate source voltage VGS 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 33 C 0.13
DC drain current, pulsed IDpuls
TA = 25 C 0.52
Power dissipation Ptot W
TA = 25 C 0.63

Data Sheet 1 05.99

 BSS 101

Maximum Ratings
Parameter Symbol Values Unit

Chip or operating temperature Tj -55 ... + 150 C

Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) RthJA 200 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V (BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 C 240 - -
Gate threshold voltage V GS(th)
VGS=VDS, ID = 1 mA 0.8 1.4 2
Zero gate voltage drain current IDSS
VDS = 240 V, V GS = 0 V, Tj = 25 C - 0.1 1 A
VDS = 240 V, V GS = 0 V, Tj = 125 C - 2 60
VDS = 130 V, V GS = 0 V, Tj = 25 C - - 30 nA
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 1 10
Drain-Source on-state resistance RDS(on)
VGS = 10 V, ID = 0.13 A - 12 16
VGS = 4.5 V, ID = 0.13 A - 15 26

Data Sheet 2 05.99

 BSS 101

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS 2 * ID * RDS(on)max, ID = 0.13 A 0.06 0.16 -
Input capacitance Ciss pF
VGS = 0 V, V DS = 25 V, f = 1 MHz - 60 80
Output capacitance Coss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 8 12
Reverse transfer capacitance Crss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 3.5 5
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 0.26 A
RG = 50 - 5 8
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 0.26 A
RG = 50 - 8 12
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 0.26 A
RG = 50 - 12 16
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 0.26 A
RG = 50 - 15 20

Data Sheet 3 05.99

 BSS 101

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode

Inverse diode continuous forward current IS A

TA = 25 C - - 0.13
Inverse diode direct current,pulsed ISM
TA = 25 C - - 0.52
Inverse diode forward voltage V SD V
VGS = 0 V, IF = 0.26 A - 0.85 1.2

Data Sheet 4 05.99

 BSS 101

Power dissipation Drain current

Ptot = (TA) ID = (TA)
parameter: VGS 10 V

0.70 0.14

W A

0.60 0.12
Ptot 0.55 ID 0.11

0.50 0.10

0.45 0.09

0.40 0.08

0.35 0.07

0.30 0.06

0.25 0.05

0.20 0.04

0.15 0.03

0.10 0.02

0.05 0.01
0.00 0.00
0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160
TA TA

Safe operating area ID=f(VDS) Drain-source breakdown voltage

parameter : D = 0.01, TC=25C V(BR)DSS = (Tj)

285

275
V(BR)DSS270

265

260

255

250

245

240

235

230

225

220
215
-60 -20 20 60 100 C 160
Tj

Data Sheet 5 05.99

 BSS 101

Typ. output characteristics Typ. drain-source on-resistance

ID = (VDS) RDS (on) = (ID)
parameter: tp = 80 s parameter: tp = 80 s, Tj = 25 C

0.30 50
Ptot = 1W k
a b

A li
j hgf e d
0.26
VGS [V]
ID 0.24 a 2.0 RDS (on) 40
0.22 b 2.5
c 3.0 35
0.20
d 3.5
0.18 e 4.0 30
f 4.5
0.16 c
g 5.0 25
0.14 h 6.0
0.12 i 7.0 20
c
j 8.0
0.10
k 9.0 15
e df
0.08 b l 10.0 k i g
j h

0.06 10

0.04 VGS [V] =

a 5 a b c d e f g h i j k
0.02 2.5
2.0 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
0.00 0
0 1 2 3 4 5 6 7 8 V 10 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s parameter: tp = 80 s,
VDS 2 x ID x RDS(on)max V DS2 x ID x RDS(on)max

0.32 0.24

S
A
0.20
ID gfs
0.24 0.18

0.16
0.20
0.14

0.16 0.12

0.10
0.12
0.08

0.08 0.06

0.04
0.04
0.02
0.00 0.00
0 1 2 3 4 5 6 7 8 V 10 0.00 0.04 0.08 0.12 0.16 0.20 0.24 A 0.30
VGS ID

Data Sheet 6 05.99

 BSS 101

Drain-source on-resistance Gate threshold voltage

RDS (on) = (Tj ) VGS (th) = (Tj )
parameter: ID = 0.13 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

40
4.6

V
4.0
RDS (on) 32 VGS(th)
3.6

28
3.2

24 2.8

20 98% 2.4
98%
2.0
16 typ
1.6 typ
12
1.2
2%
8
0.8

4 0.4
0 0.0
-60 -20 20 60 100 C 160 -60 -20 20 60 100 C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = (VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj , tp = 80 s

10 3 10 0

pF A
C IF

10 2 10 -1

Ciss

10 1 10 -2
Coss Tj = 25 C typ
Tj = 150 C typ
Crss Tj = 25 C (98%)
Tj = 150 C (98%)

10 0 10 -3
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Data Sheet 7 05.99