SIPMOS Small-Signal Transistor
q q q q q q q
BSS 139
VDS 250 V ID 0.04 A RDS(on) 100
N channel Depletion mode High dynamic resistance Available grouped in VGS(th)
Type
Ordering Code
Tape and Reel Information
Pin Configuration Marking 1 G 2 S 3 D STs
Package SOT-23
BSS 139 Q62702-S612 E6327: 3000 pcs/reel; BSS 139 Q67000-S221 E7941: 3000 pcs/reel; VGS(th) selected in groups: (see page 3) Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current, TA = 25 C Pulsed drain current, Max. power dissipation,
Symbol
Values 250 250 20 Class 1 0.04 0.12 0.36 55 + 150 350 285 E 55/150/56
Unit V
VDS VDGR VGS
TA = 25 C TA = 25 C
Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) chip-substrate reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1)
ID ID puls Ptot Tj, Tstg RthJA RthJSR
A W C K/W
For package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Data Sheet
05.99
BSS 139
Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current Values typ. max. Unit
V(BR)DSS
250 1.4 0.7
VGS(th) IDSS
1.8
VDS = 250 V, VGS = 3 V Tj = 25 C Tj = 125 C
Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance
10 75
100 200 100
nA A nA
IGSS
RDS(on)
100
VGS = 0 V, ID = 0.014 A
Dynamic Characteristics Forward transconductance VDS 2 ID RDS(on)max, ID = 0.04 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance
gfs
0.05 0.07 85 6 2 4 10 10 15
S pF 120 10 3 6 15 13 20 ns
Ciss Coss
Crss
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr) VDD = 30 V, VGS = 2 V ... + 5 V, RGS = 50 , ID = 0.15 A Turn-off time toff, (toff = td(off) + tf) VDD = 30 V, VGS = 2 V ... + 5 V, RGS = 50 , ID = 0.15 A
td(on) tr td(off) tf
Data Sheet
05.99
BSS 139
Electrical Characteristics (contd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous reverse drain current TA = 25 C Pulsed reverse drain current TA = 25 C Diode forward on-voltage IF = 0.08 A, VGS = 0 Values typ. max. Unit
IS
0.7 Unit V V V V V V V 0.04 0.12
ISM
VSD
Symbol Limit Values min. max. 0.15 1.385 1.485 1.585 1.685 1.785 1.885 1.535 1.635 1.735 1.835 1.935 2.035 1.2
VGS(th) Grouping
Range of VGS(th) Threshold voltage selected in groups: F G A B C D
1)
Test Condition
VGS(th) VGS(th)
VDS1 = 0.2 V; VDS2 = 3 V; ID = 10 A
1) A specific group cannot be ordered separately. Each reel only contains transistors from one group.
Package Outline SOT-23
Dimensions in mm
Data Sheet
05.99
BSS 139
Characteristics at Tj = 25 C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 C
Typ. output characteristics ID = f (VDS) parameter: tp = 80 s
Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS
Data Sheet
05.99
BSS 139
Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s, VDS 2 ID RDS(on)max.
Typ. forward transconductance gfs = f (ID) parameter: VDS 2 ID RDS(on)max., tp = 80 s
Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.014 A, VGS = 0 V, (spread)
Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz
Data Sheet
05.99
BSS 139
Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread)
Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 s, Tj, (spread)
Drain current ID = f (TA) parameter: VGS 3 V
Drain-source breakdown voltage V(BR) DSS = b V(BR)DSS (25 C)
Data Sheet
05.99
