Power Transistor (NPN)
2N3055
Power Transistor (NPN)
Features
• General Purpose Switching and Amplifier Applications
• RoHS Compliant
Mechanical Data TO-3
Case: TO-3, Metal Can Package
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 20 grams (approx)
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol Description 2N3055 Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 60 V
VCER Collector-Emitter Voltage (RBE=100Ω) 70 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current Continuous 15 A
IB Base Current 7 A
Total Power Dissipation at TC=25°C 115 W
PD
Derate above TC=25°C 0.657 W/° C
RθJC Thermal Resistance from Junction to Case 1.52 ° C /W
TJ, TSTG Operating Junction and Storage Temperature Range -65 to +200 °C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Rev. A/AH
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Page 1 of 4
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Power Transistor (NPN)
2N3055
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
VCEO(sus) * Collector-Emitter Sustaing Voltage 60 V IC=200mA, IB=0
IC=200mA,
VCER(sus) * Collector-Emitter Sustaing Voltage 70 V
RBE=100Ω
20 70 VCE=4V, IC=4A
hFE* D.C. Current Gain
5 - VCE=4V, IC=10A
- 1.1 V IC=4A, IB=400mA
VCE(sat) * Collector-Emitter Saturation Voltage
- 3.0 V IC=10A, IB=3.3A
VBE(on) * Base-Emitter On Voltage - 1.5 V VCE=4V, IC=4A
VCE=100V,
- 1.0 mA
VBE=(off)=1.5V
ICEX Collector-Emitter Cut-off Current VCE=100V,
- 5.0 mA VBE=(off)=1.5V,
TC=150° C
ICEO Collector-Emitter Cut-off Current - 0.7 mA VCE=30V, IB=0
IEBO Emitter-Base Cut-off Current - 5.0 mA VBE=7V, IC=0
Second Breakdown Collector Current with VCE=40V, t=1.0S,
IS/b Base Forward Biased
2.87 - A
Nonrepetitive
VCE=10V, IC=0.5A,
fT Current-Gain Bandwidth Product 2.5 - MHz f=1MHz
VCE=4V, IC=1A,
hfe Small Signal Current Gain 15 120
f=1KHz
f Small Signal Current Gain Cut-off VCE=4V, IC=1A,
hfe Frequency
10 - KHz f=1KHz
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. A/AH
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Power Transistor (NPN)
2N3055
Dimensions in mm
TO-3
Rev. A/AH
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Power Transistor (NPN)
2N3055
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
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BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
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Tel: +55-11-5574-7949
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TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/AH
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