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Chengji Jin
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2020 – today
- 2024
- [j3]Huan Liu, Qiyu Yang, Chengji Jin, Jiajia Chen, Lulu Chou, Xiao Yu, Yan Liu, Genquan Han:
Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci. China Inf. Sci. 67(1) (2024) - [c7]Xinze Li, Yiqin Zeng, Yuxuan Wu, Ying Sun, Junru Qu, Chengji Jin, Jiani Gu, Rongzong Shen, Gaobo Lin, Dawei Gao, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han:
Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications. IRPS 2024: 1-5 - [c6]Junru Qu, Dong Liu, Bing Chen, Ying Sun, Xinze Li, Chengji Jin, Jiajia Chen, Haoji Qian, Rongzong Shen, Xiao Yu, Dawei Gao, Ran Cheng, Genquan Han:
Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET. IRPS 2024: 70 - 2023
- [j2]Huan Liu, Jiajia Chen, Chengji Jin, Xiao Yu, Yan Liu, Genquan Han:
Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics. Sci. China Inf. Sci. 66(10) (2023) - [c5]Yiqin Zeng, Zhetao Ding, Xueyang Li, Minglei Ma, Yue Peng, Rongzong Shen, Gaobo Lin, Chengji Jin, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han:
Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology. ESSDERC 2023: 85-88 - [c4]Jiajia Chen, Jiani Gu, Zhi Gong, Chengji Jin, Huan Liu, Xiao Yu, Genquan Han:
Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors. ICICDT 2023: 127-130 - [c3]Zhichao Du, Chuanxue Sun, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Chengji Jin, Jixuan Wu, Jiezhi Chen:
Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD. ICTA 2023: 51-52 - 2022
- [c2]Huan Liu, Jiajia Chen, Chengji Jin, Yan Liu, Genquan Han, Xiao Yu:
Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling. ICICDT 2022: 1-4
2010 – 2019
- 2019
- [c1]Masaharu Kobayashi, Chengji Jin, Toshiro Hiramoto:
Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model. ASICON 2019: 1-4 - 2017
- [j1]Bin Lu, Hongliang Lu, Yuming Zhang, Yimen Zhang, Xiaoran Cui, Chengji Jin, Chen Liu:
Improved analytical model of surface potential with modified boundary conditions for double gate tunnel FETs. Microelectron. Reliab. 79: 231-238 (2017)
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