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"A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output ..."

Stefan Shopov et al. (2016)

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DOI: 10.1109/JSSC.2016.2560198

access: closed

type: Journal Article

metadata version: 2021-06-01

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Stefan Shopov, Andreea Balteanu, Jürgen Hasch, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu:
A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output. IEEE J. Solid State Circuits 51(9): 2054-2065 (2016)

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