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Adam Makosiej
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2020 – today
- 2023
- [j1]Ivan Miro-Panades, Benoît Tain, Jean-Frédéric Christmann, David Coriat, Romain Lemaire, Clement Jany, Baudouin Martineau, Fabrice Chaix, Guillaume Waltener, Emmanuel Pluchart, Jean-Philippe Noel, Adam Makosiej, Maxime Montoya, Simone Bacles-Min, David Briand, Jean-Marc Philippe, Yvain Thonnart, Alexandre Valentian, Frédéric Heitzmann, Fabien Clermidy:
SamurAI: A Versatile IoT Node With Event-Driven Wake-Up and Embedded ML Acceleration. IEEE J. Solid State Circuits 58(6): 1782-1797 (2023) - [i1]Ivan Miro-Panades, Benoît Tain, Jean-Frédéric Christmann, David Coriat, Romain Lemaire, Clement Jany, Baudouin Martineau, Fabrice Chaix, Guillaume Waltener, Emmanuel Pluchart, Jean-Philippe Noel, Adam Makosiej, Maxime Montoya, Simone Bacles-Min, David Briand, Jean-Marc Philippe, Yvain Thonnart, Alexandre Valentian, Frédéric Heitzmann, Fabien Clermidy:
SamurAI: A Versatile IoT Node With Event-Driven Wake-Up and Embedded ML Acceleration. CoRR abs/2304.13726 (2023) - 2021
- [c18]Navneet Gupta, Hitesh Shrimali, Adam Makosiej, Andrei Vladimirescu, Amara Amara:
Energy Efficient Comparator-Less Current-Mode TFET-CMOS Co-Integrated Scalable Flash ADC. MWSCAS 2021: 297-300 - 2020
- [c17]Ivan Miro Panades, Benoît Tain, Jean-Frédéric Christmann, David Coriat, Romain Lemaire, Clement Jany, Baudouin Martineau, Fabrice Chaix, Anthony Quelen, Emmanuel Pluchart, Jean-Philippe Noel, Reda Boumchedda, Adam Makosiej, Maxime Montoya, Simone Bacles-Min, David Briand, Jean-Marc Philippe, Alexandre Valentian, Frédéric Heitzmann, Edith Beigné, Fabien Clermidy:
SamurAI: A 1.7MOPS-36GOPS Adaptive Versatile IoT Node with 15, 000× Peak-to-Idle Power Reduction, 207ns Wake-Up Time and 1.3TOPS/W ML Efficiency. VLSI Circuits 2020: 1-2
2010 – 2019
- 2018
- [c16]Reda Boumchedda, Jean-Philippe Noel, Bastien Giraud, Adam Makosiej, Marco Antonio Rios, Eduardo Esmanhotto, Emilien Bourde-Cicé, Mathis Bellet, David Turgis, Edith Beigné:
Energy-Efficient 4T SRAM Bitcell with 2T Read-Port for Ultra-Low-Voltage Operations in 28 nm 3D Monolithic CoolCubeTM Technology. NANOARCH 2018: 131-137 - [d1]Navneet Gupta, Adam Makosiej, Amara Amara, Andrei Vladimirescu, Costin Anghel:
Related references for extended TED submission (uDRAM and uSRAM reference papers). IEEE DataPort, 2018 - 2017
- [c15]Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
Tunnel FET based refresh-free-DRAM. DATE 2017: 914-917 - [c14]Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
1.56GHz/0.9V energy-efficient reconfigurable CAM/SRAM using 6T-CMOS bitcell. ESSCIRC 2017: 316-319 - [c13]Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
Tunnel FET based ultra-low-leakage compact 2T1C SRAM. ISQED 2017: 71-75 - 2016
- [c12]Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
3T-TFET bitcell based TFET-CMOS hybrid SRAM design for Ultra-Low Power applications. DATE 2016: 361-366 - [c11]Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
16Kb hybrid TFET/CMOS reconfigurable CAM/SRAM array based on 9T-TFET bitcell. ESSDERC 2016: 356-359 - [c10]Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
Ultra-compact SRAM design using TFETs for low power low voltage applications. ISCAS 2016: 594-597 - [c9]Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
Ultra-Low-Power compact TFET Flip-Flop design for high-performance low-voltage applications. ISQED 2016: 107-112 - [c8]Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Sorin Cotofana, Costin Anghel:
TFET NDR skewed inverter based sensing method. NANOARCH 2016: 13-14 - 2015
- [c7]Navneet Gupta, Adam Makosiej, Oliver Thomas, Amara Amara, Andrei Vladimirescu, Costin Anghel:
Ultra-low leakage sub-32nm TFET/CMOS hybrid 32kb pseudo DualPort scratchpad with GHz speed for embedded applications. ISCAS 2015: 597-600 - [c6]Andrei Vladimirescu, Costin Anghel, Amara Amara, Navneet Gupta, Adam Makosiej:
Sub-picowatt retention mode TFET memory for CMOS sensor processing nodes. IWASI 2015: 266-270 - 2013
- [c5]Adam Makosiej, Olivier Thomas, Amara Amara, Andrei Vladimirescu:
CMOS SRAM scaling limits under optimum stability constraints. ISCAS 2013: 1460-1463 - 2012
- [c4]Adam Makosiej, Olivier Thomas, Andrei Vladimirescu, Amara Amara:
Stability and yield-oriented ultra-low-power embedded 6T SRAM cell design optimization. DATE 2012: 93-98 - [c3]Adam Makosiej, Rutwick Kumar Kashyap, Andrei Vladimirescu, Amara Amara, Costin Anghel:
A 32nm tunnel FET SRAM for ultra low leakage. ISCAS 2012: 2517-2520
2000 – 2009
- 2009
- [c2]Piotr Nasalski, Adam Makosiej, Bastien Giraud, Andrei Vladimirescu, Amara Amara:
SRAM Voltage and Current Sense Amplifiers in sub-32nm Double-gate CMOS Insensitive to Process Variations and Transistor Mismatch. ISCAS 2009: 3170-3173 - 2008
- [c1]Piotr Nasalski, Adam Makosiej, Bastien Giraud, Andrei Vladimirescu, Amara Amara:
An innovative sub-32nm SRAM voltage sense amplifier in double-gate CMOS insensitive to process variations and transistor mismatch. ICECS 2008: 554-557
Coauthor Index
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