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Fatih Hamzaoglu
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2020 – today
- 2024
- [j15]Shanshan Xie
, Can Ni
eDRAM-CIM: Reconfigurable Charge Domain Compute-In-Memory Design With Embedded Dynamic Random Access Memory Array Realizing Adaptive Data Converters. IEEE J. Solid State Circuits 59(6): 1950-1961 (2024) - 2022
- [c21]Shanshan Xie, Can Ni, Pulkit Jain, Fatih Hamzaoglu, Jaydeep P. Kulkarni:
Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM Compute in Memory Design with Bitline Precharge DACs and Compact Schmitt Trigger ADCs. VLSI Technology and Circuits 2022: 112-113 - 2021
- [j14]Ravi R. Iyer
Advances in Microprocessor Cache Architectures Over the Last 25 Years. IEEE Micro 41(6): 78-88 (2021) - [c20]Shanshan Xie, Can Ni, Aseem Sayal, Pulkit Jain, Fatih Hamzaoglu, Jaydeep P. Kulkarni:
16.2 eDRAM-CIM: Compute-In-Memory Design with Reconfigurable Embedded-Dynamic-Memory Array Realizing Adaptive Data Converters and Charge-Domain Computing. ISSCC 2021: 248-250
2010 – 2019
- 2019
- [c19]James A. O'Donnell, Chris Connor, Tanmoy Pramanik, Jeff Hicks, Juan G. Alzate, Fatih Hamzaoglu, Justin Brockman, Oleg Golonzka, Kevin Fischer:
eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology. IRPS 2019: 1-3 - [c18]Pulkit Jain, Umut Arslan, Meenakshi Sekhar, Blake C. Lin, Liqiong Wei, Tanaya Sahu, Juan Alzate-vinasco, Ajay Vangapaty, Mesut Meterelliyoz, Nathan Strutt, Albert B. Chen, Patrick Hentges, Pedro A. Quintero, Chris Connor, Oleg Golonzka, Kevin Fischer, Fatih Hamzaoglu:
A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V. ISSCC 2019: 212-214 - [c17]Liqiong Wei, Juan G. Alzate, Umut Arslan, Justin Brockman, Nilanjan Das, Kevin Fischer, Tahir Ghani, Oleg Golonzka, Patrick Hentges, Rawshan Jahan, Pulkit Jain, Blake C. Lin, Mesut Meterelliyoz, Jim O'Donnell, Conor Puls, Pedro A. Quintero, Tanaya Sahu, Meenakshi Sekhar, Ajay Vangapaty, Chris Wiegand, Fatih Hamzaoglu:
A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique. ISSCC 2019: 214-216 - [c16]Fatih Hamzaoglu:
Embedded Memories for Silicon-In-Package: Optimization of Memory Subsystem from IoT to Machine Learning. VLSI-DAT 2019: 1 - 2018
- [c15]Naveen Verma, Fatih Hamzaoglu, Makoto Nagata, Leland Chang:
Session 31 overview: Computation in memory for machine learning: Technology directions and memory subcommittees. ISSCC 2018: 486-487 - 2017
- [c14]Avishek Biswas, Umut Arslan, Fatih Hamzaoglu, Anantha P. Chandrakasan:
An offset-cancelling four-phase voltage sense amplifier for resistive memories in 14nm CMOS. CICC 2017: 1-4 - [c13]Fatih Hamzaoglu, Chun Shiah, Leland Chang:
Session 12 overview: SRAM. ISSCC 2017: 204-205 - 2015
- [j13]Fatih Hamzaoglu, Umut Arslan, Nabhendra Bisnik, Swaroop Ghosh, Manoj B. Lal, Nick Lindert, Mesut Meterelliyoz, Randy B. Osborne, Joodong Park, Shigeki Tomishima
A 1 Gb 2 GHz 128 GB/s Bandwidth Embedded DRAM in 22 nm Tri-Gate CMOS Technology. IEEE J. Solid State Circuits 50(1): 150-157 (2015) - [c12]Jonathan Chang, Leland Chang, Antoine Dupret, Chulwoo Kim, Fatih Hamzaoglu, Takefumi Yoshikawa:
F2: Memory trends: From big data to wearable devices. ISSCC 2015: 1-2 - [c11]Fatih Hamzaoglu, Takashi Kono:
Session 7 overview: Non-volatile memory solutions: Memory subcommittee. ISSCC 2015: 126-127 - 2014
- [c10]Fatih Hamzaoglu, Umut Arslan, Nabhendra Bisnik, Swaroop Ghosh, Manoj B. Lal, Nick Lindert, Mesut Meterelliyoz, Randy B. Osborne, Joodong Park, Shigeki Tomishima
13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology. ISSCC 2014: 230-231 - [c9]Mesut Meterelliyoz, Fuad H. Al-amoody, Umut Arslan, Fatih Hamzaoglu, Luke Hood, Manoj B. Lal, Jeffrey L. Miller, Anand Ramasundar, Dan Soltman, Ifar Wan, Yih Wang
2nd generation embedded DRAM with 4X lower self refresh power in 22nm Tri-Gate CMOS technology. VLSIC 2014: 1-2 - 2013
- [j12]Eric Karl, Yih Wang
A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry. IEEE J. Solid State Circuits 48(1): 150-158 (2013) - 2012
- [c8]Eric Karl, Yih Wang
A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry. ISSCC 2012: 230-232 - 2011
- [j11]Fatih Hamzaoglu, Yih Wang
Bit Cell Optimizations and Circuit Techniques for Nanoscale SRAM Design. IEEE Des. Test Comput. 28(1): 22-31 (2011) - [j10]Pramod Kolar, Eric Karl, Uddalak Bhattacharya, Fatih Hamzaoglu, Henry Nho, Yong-Gee Ng, Yih Wang
A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation. IEEE J. Solid State Circuits 46(1): 76-84 (2011) - 2010
- [j9]Yih Wang
A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management. IEEE J. Solid State Circuits 45(1): 103-110 (2010) - [j8]Dinesh Somasekhar, Balaji Srinivasan, Gunjan Pandya, Fatih Hamzaoglu, Muhammad M. Khellah
Multi-Phase 1 GHz Voltage Doubler Charge Pump in 32 nm Logic Process. IEEE J. Solid State Circuits 45(4): 751-758 (2010) - [c7]Hyunwoo Nho, Pramod Kolar, Fatih Hamzaoglu, Yih Wang
A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation. ISSCC 2010: 346-347
2000 – 2009
- 2009
- [j7]Fatih Hamzaoglu, Kevin Zhang, Yih Wang
A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology. IEEE J. Solid State Circuits 44(1): 148-154 (2009) - [j6]Muhammad M. Khellah
Process, Temperature, and Supply-Noise Tolerant 45nm Dense Cache Arrays With Diffusion-Notch-Free (DNF) 6T SRAM Cells and Dynamic Multi-Vcc Circuits. IEEE J. Solid State Circuits 44(4): 1199-1208 (2009) - [c6]Yih Wang
A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management. ISSCC 2009: 456-457 - 2008
- [j5]Yih Wang
A 1.1 GHz 12 µA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications. IEEE J. Solid State Circuits 43(1): 172-179 (2008) - [c5]Fatih Hamzaoglu, Kevin Zhang, Yih Wang
A 153Mb-SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm High-Κ Metal-Gate CMOS Technology. ISSCC 2008: 376-377 - 2007
- [j4]Muhammad M. Khellah
A 256-Kb Dual-VCC SRAM Building Block in 65-nm CMOS Process With Actively Clamped Sleep Transistor. IEEE J. Solid State Circuits 42(1): 233-242 (2007) - [c4]Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya, Tom Coan, Fatih Hamzaoglu, Walid M. Hafez, Chia-Hong Jan, Pramod Kolar, Sarvesh H. Kulkarni, Jie-Feng Lin, Yong-Gee Ng, Ian Post, Liqiong Wei, Yih Zhang, Kevin Zhang, Mark Bohr:
A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications. ISSCC 2007: 324-606 - 2006
- [j3]Kevin Zhang, Uddalak Bhattacharya, Zhanping Chen, Fatih Hamzaoglu, Daniel Murray, Narendra Vallepalli, Yih Wang
A 3-GHz 70-mb SRAM in 65-nm CMOS technology with integrated column-based dynamic power supply. IEEE J. Solid State Circuits 41(1): 146-151 (2006) - [c3]Muhammad M. Khellah, Nam-Sung Kim, Jason Howard, Gregory Ruhl, Yibin Ye, James W. Tschanz, Dinesh Somasekhar, Nitin Borkar, Fatih Hamzaoglu, Gunjan Pandya, Ali Farhang, Kevin Zhang, Vivek De:
A 4.2GHz 0.3mm2 256kb Dual-Vcc SRAM Building Block in 65nm CMOS. ISSCC 2006: 2572-2581 - 2005
- [j2]Kevin Zhang, Uddalak Bhattacharya, Zhanping Chen, Fatih Hamzaoglu, Daniel Murray, Narendra Vallepalli, Yih Wang
SRAM design on 65-nm CMOS technology with dynamic sleep transistor for leakage reduction. IEEE J. Solid State Circuits 40(4): 895-901 (2005) - 2004
- [c2]Mircea R. Stan
Non-Manhattan maze routing. SBCCI 2004: 260-265 - 2002
- [j1]Fatih Hamzaoglu, Yibin Ye, Ali Keshavarzi, Kevin Zhang, Siva G. Narendra, Shekhar Borkar, Mircea R. Stan
Analysis of dual-VT SRAM cells with full-swing single-ended bit line sensing for on-chip cache. IEEE Trans. Very Large Scale Integr. Syst. 10(2): 91-95 (2002) - [c1]Fatih Hamzaoglu, Mircea R. Stan:
Circuit-level techniques to control gate leakage for sub-100nm CMOS. ISLPED 2002: 60-63
Coauthor Index
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