• case-insensitive prefix search: default
  e.g., sig matches "SIGIR" as well as "signal"
• exact word search: append dollar sign ($) to word
  e.g., graph$ matches "graph", but not "graphics"
• boolean and: separate words by space
  e.g., codd model
• boolean or: connect words by pipe symbol (|)
  e.g., graph|network

Update May 7, 2017: Please note that we had to disable the phrase search operator (.) and the boolean not operator (-) due to technical problems. For the time being, phrase search queries will yield regular prefix search result, and search terms preceded by a minus will be interpreted as regular (positive) search terms.

found 172 matches

• 2018
• 
  Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, Sivan Fadida, Roy Winter, Moshe Eizenberg:
  Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks. IRPS 2018: 3-1
• 
  Jae-Gyung Ahn, Ping-Chin Yeh, Jonathan Chang:
  Electromigration failure rate of redundant via. IRPS 2018: 1
• 
  Akin Akturk, James McGarrity, Neil Goldsman, Daniel J. Lichtenwalner, Brett Hull, Dave Grider, Richard Wilkins:
  The effects of radiation on the terrestrial operation of SiC MOSFETs. IRPS 2018: 2
• 
  Sami Alghamdi, Mengwei Si, Lingming Yang, Peide D. Ye:
  Low frequency noise in MOS2 negative capacitance field-effect transistor. IRPS 2018: 1
• 
  M. Arabi, A. Cros, X. Federspiel, Cheikh Ndiaye, Vincent Huard, M. Rafik:
  Modeling self-heating effects in advanced CMOS nodes. IRPS 2018: 3-1
• 
  Lucile Arnaud, Stéphane Moreau, Amadine Jouve, Imed Jani, Didier Lattard, F. Fournel, C. Euvrard, Y. Exbrayat, Viorel Balan, Nicolas Bresson, S. Lhostis, J. Jourdon, E. Deloffre, S. Guillaumet, Alexis Farcy, Simon Gousseau, M. Arnoux:
  Fine pitch 3D interconnections with hybrid bonding technology: From process robustness to reliability. IRPS 2018: 4
• 
  Sofie Beyne, Shibesh Dutta, Olalla Varela Pedreira, Niels Bosman, Christoph Adelmann, Ingrid De Wolf, Zsolt Tökei, Kristof Croes:
  The first observation of p-type electromigration failure in full ruthenium interconnects. IRPS 2018: 6
• 
  Roberta Bottini, Andrea Ghetti, Sara Vigano, Maria Grazia Valentini, Pratap Murali, Chandra Mouli:
  Non-poissonian behavior of hot carrier degradation induced variability in MOSFETs. IRPS 2018: 6
• 
  Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marko Simicic, Pieter Weckx, Dimitri Linten:
  Self-heating-aware CMOS reliability characterization using degradation maps. IRPS 2018: 2
• 
  Eduard Cartier, Martin M. Frank, Takashi Ando, John Rozen, Vijay Narayanan:
  PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation. IRPS 2018: 5
• 
  Alberto Castellazzi, Asad Fayyaz, Siwei Zhu, Thorsten Oeder, Martin Pfost:
  Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. IRPS 2018: 4
• 
  I. K. Chen, S. C. Chen, S. Mukhopadhyay, D. S. Huang, J. H. Lee, Y. S. Tsai, Ryan Lu, Jun He:
  The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs. IRPS 2018: 4
• 
  Pin-Shiang Chen, Shou-Chung Lee, A. S. Oates, Chee Wee Liu:
  BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown. IRPS 2018: 6
• 
  Pai-Yu Chen, Shimeng Yu:
  Reliability perspective of resistive synaptic devices on the neuromorphic system performance. IRPS 2018: 5
• 
  Kin P. Cheung:
  SiC power MOSFET gate oxide breakdown reliability - Current status. IRPS 2018: 2
• 
  Omar Chihani, Loic Théolier, Jean-Yves Delétage, Eric Woirgard, Alain Bensoussan, André Durier:
  Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs. IRPS 2018: 2-1
• 
  Seungman Choi, Cathryn Christiansen, Linjun Cao, James Zhang, Ronald Filippi, Tian Shen, Kong Boon Yeap, Sean P. Ogden, Haojun Zhang, Bianzhu Fu, Patrick Justison:
  Effect of metal line width on electromigration of BEOL Cu interconnects. IRPS 2018: 4
• 
  Yu-Lin Chu, Hsi-Yu Kuo, Sheng-Fu Hsu, Yung-Sheng Tsai, Ming-Yi Wang, Chuan-Li Chang, Bill Kiang, Kenneth Wu:
  A new mechanism of signal path charging damage across separated power domain deep N-Well interface. IRPS 2018: 6
• 
  Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede:
  A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS 2018: 2-1
• 
  C. Chung, D. Kobayashi, K. Hirose:
  Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation. IRPS 2018: 4
• 
  André Clausner, Simon Schlipf, Gottfried Kurz, Michael Otto, Jens Paul, Kay-Uwe Giering, Jens Warmuth, André Lange, Roland Jancke, Andreas Aal, Rüdiger Rosenkranz, Martin Gall, Ehrenfried Zschech:
  Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation. IRPS 2018: 5
• 
  Kristof Croes, Vladimir Cherman, Melina Lofrano, Houman Zahedmanesh, Luka Kljucar, Mario Gonzalez, Ingrid De Wolf, Zsolt Tökei, Eric Beyne:
  Stress mitigation of 3D-stacking/packaging induced stresses. IRPS 2018: 4
• 
  Krzysztof Domanski:
  Latch-up in FinFET technologies. IRPS 2018: 2
• 
  Lesly Endrinal, Rakesh Kinger, Lavakumar Ranganathan, Amit Sheth:
  Solving critical issues in 10nm technology using innovative laser-based fault isolation and DFT diagnosis techniques. IRPS 2018: 6
• 
  Chia-Chi Fan, Chun-Yuan Tu, Ming-Huei Lin, Chun-Yen Chang, Chun-Hu Cheng, Yen-Liang Chen, Guan-Lin Liou, Chien Liu, Wu-Ching Chou, Hsiao-Hsuan Hsu:
  Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. IRPS 2018: 8-1
• 
  Yi-Pin Fang, Anthony S. Oates:
  Soft errors in 7nm FinFET SRAMs with integrated fan-out packaging. IRPS 2018: 4
• 
  Andy Fenner, Mark Porter, Randy Crutchfield:
  Making the connection between physics of failure and system-level reliability for medical devices. IRPS 2018: 6
• 
  Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Ioana Popovici, Guido Groeseneken, Jan Van Houdt:
  Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS 2018: 6
• 
  Jacopo Franco, Ben Kaczer, Adrian Vaisman Chasin, Erik Bury, Dimitri Linten:
  Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. IRPS 2018: 5
• 
  Shouhei Fukuyama, Kazuki Maeda, Shinpei Matsuda, Ken Takeuchi, Ryutaro Yasuhara:
  Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM. IRPS 2018: 4-1

skipping 142 more matches