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Microelectronics Journal, Volume 36
Volume 36, Number 1, January 2005
- G. E. Zardas, P. H. Yannakopoulos, M. Ziska, Chrys I. Symeonides, P. C. Euthymiou, O. Csabay:
Dependence of GaAs: Si persistent photoconductivity on temperature and alpha-particle irradiation. 1-4 - Emmanuel M. Drakakis:
Approximate process-parameter-dependent study of the logarithmic domain lossy integrator harmonic distortion levels. 5-23 - H. Choi, Eui Kwan Koh, Yong Min Cho, Junggeun Jin, Dongjin Byun, Minjoong Yoon
:
Effects of extended dislocations on charge distribution in GaN epilayer. 25-28 - Nian Zhan, M. C. Poon, Hei Wong
Dielectric breakdown characteristics and interface trapping of hafnium oxide films. 29-33 - Yang-Kuao Kuo, Chuen-Guang Chao:
Analysis of the effects of reflectance and refraction generated by wafers made from fused silica, ALOxNy and TiSixNy under different light sources on pattern length and best focus. 35-39 - Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai:
Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation. 41-49 - Marco Antonio Robert Alves, D. F. Takeuti, Edmundo S. Braga:
Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching. 51-54 - Te-Hua Fang
Nanomechanical characterization of polymer using atomic force microscopy and nanoindentation. 55-59 - A. H. You, Duu Sheng Ong
Full-band Monte Carlo simulation of thin InP p+-i-n+ diodes. 61-65 - Uygar Avci, Sandip Tiwari:
A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception. 67-75 - Miguel A. Méndez, José Luis González, Diego Mateo
An investigation on the relation between digital circuitry characteristics and power supply noise spectrum in mixed-signal CMOS integrated circuits. 77-84 - K. T. Kaschani:
Electrical overstress due to ESD induced displacement currents. 85-90 - S. B. Wang, S. B. Zhou, G. Huang, B. F. Xiong, S. H. Chen, X. J. Yi:
Fabrication of 128×128 element optical switch array by micromachining technology. 91-95 - Ming-Sze Tong, Yilong Lu, Yinchao Chen, Mingwu Yang, Qunsheng Cao, Viktor Krozer
Corrigendum to: Design and analysis of planar printed microwave and PBG filters using an FDTD method. 97
Volume 36, Number 2, February 2005
- Lotfi Beji, L. Bouzaïene, B. Ismaïl, Laarbi Sfaxi, Hichem Maaref, Hafedh Ben Ouada
Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate. 99-103 - Xiao Buwen, Shang Yafeng, Meng Meng, Li Chuannan:
Enhancement of hole injection with an ultra-thin Ag2O modified anode in organic light-emitting diodes. 105-108 - Z. W. Zhong, S. C. Lim, Anand K. Asundi
Effects of thermally induced optical fiber shifts in V-groove arrays for optical MEMS. 109-113 - A. Belghachi:
Modelling of perimeter recombination in GaAs solar cells. 115-124 - Yong-ning He, Jing-wen Zhang, Xiaodong Yang, Qing-an Xu, Xinghui Liu, Chang-Chun Zhu, Xun Hou:
Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE. 125-128 - F. K. Yam
Innovative advances in LED technology. 129-137 - Cristian Chitu, Manfred Glesner:
An FPGA implementation of the AES-Rijndael in OCB/ECB modes of operation. 139-146 - Wen-Tsong Shiue:
Power/area/delay aware FSM synthesis and optimization. 147-162 - Nikolaos D. Zervas, George Theodoridis, Dimitrios Soudris:
Behavioral-level event-driven power management for DECT digital receivers. 163-172
Volume 36, Numbers 3-6, March-June 2005
- Mohamed Henini
Preface. 173-174 - Dieter Bimberg
Quantum dot photonic devices for lightwave communication. 175-179 - Vittorianna Tasco
Improved performances of 1.3mum InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition. 180-182 - G. Sun, Richard A. Soref, Jacob B. Khurgin
A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps. 183-185 - T. V. Torchynska, H. M. Alfaro Lopez, J. L. Casas Espinola
Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power. 186-189 - J. S. Yim, J. H. Lee, Y. D. Jang, Moon-Deock Kim
Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5mum laser diodes. 190-193 - A. F. G. Monte, J. F. R. Cunha, M. A. P. Soler, S. W. Silva, A. A. Quivy
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3mum. 194-196 - Simon Frédérick, Dan Dalacu, Daniel Poitras
Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities. 197-199 - Milena De Giorgi
Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance. 200-202 - Sung-Ho Hwang, J. C. Shin, Jin Dong Song, Won Jun Choi, Jung-Il Lee, H. Han:
Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment. 203-206 - Daniel S. Raimundo, Adriana B. Stelet, Francisco J. R. Fernandez, Walter J. Salcedo
Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication. 207-211 - Raphael Tsu:
Stability issues in tunneling via quantum systems. 212-215 - Takashi Hanada
Formation and evolution of strain-induced self-assembled dot. 216-218 - S. L. Morelhão, L. H. Avanci, R. Freitas, A. A. Quivy
Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning. 219-222 - B. Sherliker, P. Harmer, M. P. Halsall, P. Buckle, P. J. Parbrook, T. Wang:
Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. 223-226 - H. Pettersson, L. Landin, Ying Fu, M. Kleverman, Magnus Borgström, Werner Seifert, Lars Samuelson
Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP. 227-230 - Carlos Alberto Duque, N. Porras-Montenegro, Z. Barticevic, Monica Pacheco
Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure. 231-233 - N. O. Dantas, A. F. G. Monte, W. A. Cardoso, A. G. Brito-Madurro
Growth and characterisation of ZnO quantum dots in polyacrylamide. 234-236 - Andrei Andreev, Francesco Quochi
Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy. 237-240 - A. M. Alcalde, O. O. Diniz Neto, G. E. Marques:
Spin relaxation due to the phonon modulation of the spin-orbit interaction in quantum dots. 241-243 - F. A. P. Osório, A. B. A. Marques, P. C. M. Machado, A. N. Borges:
The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1-x as quantum dots. 244-246 - Katsumoto Ikeda, Fujio Minami, Nobuyuki Koguchi:
Acoustical phonon dephasing in GaAs quantum dots. 247-249 - K. Daneshvar, K. Kang, Raphael Tsu:
Three-dimensional quantum dot array. 250-252 - Alexander N. Korotkov:
Quantum feedback of a double-dot qubit. 253-255 - G. J. Brown, F. Szmulowicz, H. Haugan, K. Mahalingam, S. Houston:
Design of InAs/Ga(In)Sb superlattices for infrared sensing. 256-259 - M. El Tahchi, E. Nassar, P. Mialhe:
Study and development of a silicon infrared diode operating under forward bias. 260-263 - Igor A. Sukhoivanov, O. V. Mashoshyna, V. K. Kononenko, D. V. Ushakov:
How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers. 264-268 - Keiko Takase, Yukio Kawano, Tohru Okamoto:
Time response of a highly sensitive and tunable THz detector using the quantum hall effect. 269-271 - Kameshwar K. Yadavalli, Alexei O. Orlov
Aluminum oxide tunnel barriers for single electron memory devices. 272-276 - M. D. B. Charlton, M. E. Zoorob, M. C. Netti, N. Perney, G. J. Parker, P. Ayliffe, J. J. Baumberg:
Realisation of ultra-low loss photonic crystal slab waveguide devices. 277-281 - Jiun Haw Chu, O. Voskoboynikov, C. P. Lee:
Slow light in photonic crystals. 282-284 - O. Bendix, J. A. Méndez-Bermúdez, German A. Luna-Acosta, Ulrich Kuhl, Hans-Jürgen Stöckmann:
Design of beam splitters and microlasers using chaotic waveguides. 285-288 - José Azaña, Mykola Kulishov:
Optical pulse shaping capabilities of grating-assisted codirectional couplers. 289-293 - Pratyush Das Kanungo, Alexandra Imre
Gated hybrid Hall effect device on silicon. 294-297 - O'Dae Kwon, M. J. Kim, S.-J. An, Dongkwon Kim, Seung Eun Lee:
Photonic quantum corral, carrier ordering, and photonic quantum dot/ring device. 298-300 - Samson Mil'shtein, J. Palma:
Heterostructure transistor with tunable gate bias. 301-303 - Ravi K. Kummamuru, Mo Liu, Alexei O. Orlov
Temperature dependence of the locked mode in a single-electron latch. 304-307 - Xiangning Luo, Alexei O. Orlov
Origin of Coulomb blockade oscillations in single-electron transistors fabricated with granulated Cr/Cr2O3 resistive microstrips. 308-312 - Samson Mil'shtein, C. Gil, Peter Ersland:
Heterojunction semiconductor triode - a new vertical device. 313-315 - Samson Mil'shtein, C. Liessner:
High speed switch using pairs of pHEMTs with shifted gates. 316-318 - Samson Mil'shtein:
Shaping electrical field in heterostructure transistors. 319-322 - Santhosh Krishnan, Dragica Vasileska
Hole transport in p-channel Si MOSFETs. 323-326 - W. R. Clarke, Adam P. Micolich
Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET. 327-330 - C.-T. Liang, Masaya Kataoka
Evidence for a finite compressibility of a quasi-one-dimensional ballistic channel. 331-333 - Jesús Iñarrea
Microwave-induced zero-resistance states on 2D electron gas: theoretical explanation and temperature dependence. 334-337 - N. L. Ivina, L. K. Orlov, V. B. Shevtsov, N. A. Alyabina:
Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers. 338-341 - J. C. Salcedo-Reyes, Isaac Hernández-Calderón
Symmetry properties and electronic band structure of ordered Zn0.5Cd0.5Se alloys. 342-346 - S. J. Vlaev, Isaac Rodríguez-Vargas
Mean life times of quasi-bound states in delta-doped GaAs quantum wells. 347-349 - Oleksiy V. Shulika, Ivan M. Safonov
Quantum capture area in layered quantum well structures. 350-355 - Yara Galvão Gobato
Charge buildup effects in asymmetric p-type resonant tunneling diodes. 356-358 - M. G. Bezerra, José Alexander de King Freire, V. N. Freire, Gil de Aquino Farias, F. M. S. Lima, A. L. A. Fonseca, O. A. C. Nunes Jr.:
Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices. 359-361 - Adrián Alfaro-Martínez, Isaac Hernández-Calderón
Anomalous temperature behavior of the excitonic emission of a 3 ML ultra-thin quantum well of CdSe. 362-365 - R. G. Mani:
AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices. 366-368 - Carlos L. Beltrán Ríos
Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs-AlGaAs quantum wells. 369-373 - Tatiana Prutskij, Claudio Pelosi, Raul A. Brito-Orta:
Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques. 374-378 - Ed T. Croke, R. N. Schwartz, B. Shi, A. A. Narayanan, Andrey A. Kiselev, Mark F. Gyure:
Direct electrical measurement of the electron g factor in ultra-thin InGaAs/InP single quantum wells. 379-382 - Pablo Villamil, Carlos Cabra, N. Porras-Montenegro:
Excited states and infrared transition energies of a donor impurity in cylindrical GaAs-Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field. 383-388 - Jhang W. Lee, Young Woo Ahn, Jae Ho Song, Byung Gyu Cho, Il Ho Ahn:
AlGaAs/InGaAs PHEMT with multiple quantum wire gates. 389-391 - Jong Chang Yi:
Self-consistent analysis of the miniband structures in superlattice quantum wires. 392-395 - M. L. Orlov, Yu. A. Romanov, L. K. Orlov:
Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field. 396-400 - Pedro Pereyra
Absence of Wannier-Stark ladders in finite superlattices. 401-403 - Isaac Rodríguez-Vargas
Thomas-Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations. 404-406 - D. H. A. L. Anselmo, A. L. Dantas, S. K. Medeiros, G. A. Farias, Eudenílson L. Albuquerque
Optical phonon modes confinement in quasiperiodic semiconductor superlattice. 407-410 - Diosdado Villegas, Fernando de León-Pérez, Rolando Pérez-Alvarez
Gaussian superlattice for phonons. 411-412 - Miguel Eduardo Mora-Ramos
Propagation of light in quasi-regular dielectric heterostructures with delta-like layers. 413-415 - Luis Manuel Gaggero-Sager, Miguel Eduardo Mora-Ramos
Calculation of electronic properties in AlxGa1-x delta-doped systems. 416-418 - Pedro Pereyra
Electronic transport and interfering phenomena induced by transverse electric field. 419-421 - Hiroyuki Shima
Breakdown of Anderson localization in disordered quantum chains. 422-424 - R. Nemutudi, C.-T. Liang, M. J. Murphy, Harvey E. Beere, C. G. Smith, David A. Ritchie
Jain-Kivelson-type resonance as a noninvasive probe of screening in the quantum Hall regime. 425-427 - Shang-Chia Chen, Shih-Kai Lin, Kun-Ta Wu, Chao-Ping Huang, Pen-Hsiu Chang, N. C. Chen
Transport measurements on MOVPE-grown InN films. 428-430 - R. B. de Almeida, A. N. Borges, P. C. M. Machado, F. A. P. Osório:
Confinement effect on the intradonor 1s-2p+ transition energies in GaN quantum wells. 431-433 - S. C. P. Rodrigues Jr., Guilherme Matos Sipahi
Optical and electronic properties of AlInGaN/InGaN superlattices. 434-437 - Peter Kordos, Jan Bernát, Michel Marso:
Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT. 438-441 - J. Misiewicz, R. Kudrawiec, Marcin Syperek
Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy. 442-445 - J. Misiewicz, R. Kudrawiec, M. Motyka, J. Andrzejewski, D. Gollub, Alfred Forchel
Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells. 446-449 - G. Sun, Richard A. Soref:
Design and simulation of a GaN/AlGaN quantum cascade laser for terahertz emission. 450-452 - H. J. Lozykowski, W. M. Jadwisienczak, A. Bensaoula, O. Monteiro:
Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN. 453-455 - Ryan Buckmaster, J. H. Yoo, K. Shin, Y. Yao, Takashi Sekiguchi
GaN nanodot fabrication by implant source growth. 456-459 - Ashwin Ashok, Richard Akis
Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures. 460-462 - A. C. R. Bittencourt, J. F. Estanislau, G. E. Marques:
Spin-polarized charge fluctuations in magnetic tunneling diodes. 463-465 - Tsai-Yu Huang, Chao-Ping Huang, Yi-Hsing Chiu, C.-T. Liang, M. Y. Simmons, David A. Ritchie
'Mobility gap' of a spin-split GaAs two-dimensional electron gas. 466-468 - Da-Ren Hang
Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect. 469-471 - O. Navarro, V. Men'shov, V. Tugushev:
Spin ordering in chromium layered structures with inserted nonmagnetic monolayers. 472-474 - M. S. Tomar, Surinder P. Singh
Synthesis and magnetic behavior of nanostructured ferrites for spintronics. 475-479 - G. E. Marques, A. C. R. Bittencourt, Victor Lopez-Richard
Spin carrier dynamics under full spin-orbit coupling. 480-483 - K. C. Seo, G. H. Ihm, S. J. Lee:
Spin-polarized tunneling in an electromagnetic structure. 484-487 - V. Tugushev, E. Kulatov, O. Navarro:
The mechanism of interlayer exchange coupling in silicon/iron layered structures. 488-490 - Surinder P. Singh
Experimental and theoretical studies of LiNi1/3Mn1/3M1/3O2 [M=Mo and Rh] for cathode material. 491-494 - G. Ortega-Cervantez, G. Rueda-Morales, J. Ortiz-López:
Catalytic CVD production of carbon nanotubes using ethanol. 495-498 - Solange Binotto Fagan
Lithium intercalation into single-wall carbon nanotube bundles. 499-501 - Victor Ovchinnikov, Serguei Novikov
Electroluminescence from B- and P-doped silicon nanoclusters. 502-505 - Andreas Fissel
Epitaxial growth of non-cubic silicon. 506-509 - A. Vivas Hernandez, T. V. Torchynska, Y. Matsumoto, Sergio Jiménez-Sandoval, M. Dybiec, S. Ostapenko, L. V. Shcherbina:
Optical investigation of Si nano-crystals in amorphous silicon matrix. 510-513 - E. Chambon, E. Florentin, T. V. Torchynska, J. González-Hernández, Y. V. Vorobiev:
Optical properties of porous silicon surface. 514-517 - L. K. Orlov, N. L. Ivina, A. V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. J. Horvath:
Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures. 518-521 - M. Alper Sahiner, Daniel F. Downey, Steven W. Novak, Joseph C. Woicik, Dario A. Arena:
The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques. 522-526 - Adriana E. Martínez-Cantón
Thermal quenching of the self-activated band of ZnSe: Cl thin films grown by molecular beam epitaxy. 527-530 - C. L. Heng, T. G. Finstad, Y. J. Li, A. E. Gunnæs
Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing. 531-535 - T. V. Torchynska, A. I. Diaz Cano, Sergio Jiménez-Sandoval, M. Dybiec, S. Ostapenko, Marina Mynbaeva
Photoluminescence and Raman spectroscopy in porous SiC. 536-538 - O. Millo, I. Asulin, A. Sharoni
The superconductor proximity effect in Au-YBa2Cu3O7-delta bilayer films: the role of order parameter anisotropy. 539-542 - Oscar Blanco-Alonso
Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films. 543-545 - Xiaojun Wang, Zhiyi He, Dongdong Jia, Wieslaw Strek
Crystal size dependence of the persistent phosphorescence in Sr2ZnSi2O7: Eu2+, Dy3+. 546-548 - Xiu-Tian Zhao, Kenji Sakka, Naoto Kihara, Yasuyuki Takada
Structure and photo-induced features of TiO2 thin films prepared by RF magnetron sputtering. 549-551 - Milena De Giorgi
Optical properties of colloidal nanocrystal spheres and tetrapods. 552-554 - Juan M. Camacho, A. I. Oliva:
Morphology and electrical resistivity of metallic nanostructures. 555-558 - Vitaliy N. Pustovit, Tigran V. Shahbazyan:
Quantum-size effects in SERS from noble-metal nanoparticles. 559-563 - O. Voskoboynikov, Georgi Dyankov
Left handed composite materials in the optical range. 564-566 - Andrea Antunes
Roughness and nanoholes in sol-gel thin films. 567-569 - Sergio A. Tomás
Optical and electronic characterization of the band structure of blue methylene and rhodamine 6G-doped TiO2 sol-gel nanofilms. 570-573 - M. S. Tomar, R. E. Melgarejo, Surinder P. Singh
Leakage current and ferroelectric memory in Nd and Sm substituted Bi4Ti3O12 films. 574-577 - Kazunari Ozasa, Mizuo Maeda, Masahiko Hara:
Photoluminescence behavior of CdSe on GaAsOx/GaAs substrates. 578-580 - Miguel L. Crespillo
Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110). 581-585 - Hiroyuki Shima
Enhanced orientation of interacting polar molecules. 586-588 - E. F. Nobre, G. A. Farias, A. N. da Silva
Propagation of polaritons in coaxial multi-shell cylinders. 589-591 - Yukio Kawano, Takuya Okamoto:
A new type of scanning probe microscope: combination between an electrometer and a THz microscope. 592-595 - Jorge-Alejandro Reyes-Esqueda, Carlos I. Mendoza, Marcelo del Castillo-Mussot
Stark effect on a geometry defined by a cake's slice. 596-598 - T. M. Razykov:
A novel chemical molecular beam deposition method for fabrication of II-VI low dimensional structures. 599-600 - Z. Moktadir, Michael Kraft
Wavelet analysis of coarsening during unstable MBE growth. 601-604 - P. G. Bolcatto, E. C. Goldberg, M. C. G. Passeggi:
Molecular conduction using the parameter-free bond-pair model. 605-607 - Z. Moktadir, H. Wensink
Analytical model of micromachining of brittle materials with sharp particles. 608-611
Volume 36, Number 7, July 2005
- Bernard Courtois:
Special issue on European Micro and Nano Systems (EMN04) held in Paris, 20-21 October, 2004. 613 - Giuseppe Iannaccone
Perspectives and challenges in nanoscale device modeling. 614-618 - Gary H. Bernstein, Alexandra Imre
Magnetic QCA systems. 619-624 - Yamin Leprince-Wang, A. Yacoubi-Ouslim, G. Y. Wang:
Structure study of electrodeposited ZnO nanowires. 625-628 - Kuniyuki Kakushima, Tarik Bourouina
Silicon periodic nano-structures obtained by laser exposure of nano-wires. 629-633 - N. N. Dzbanovsky, V. V. Dvorkin, V. G. Pirogov, N. V. Suetin:
The aligned Si nanowires growth using MW plasma enhanced CVD. 634-638 - Ibrahima Kante, Thierry Devers, Rachid Harba, Caroline Andreazza-Vignolle
Electrical behaviour of fractal nanosized tin dioxide films prepared by electrodeposition for gas sensing applications. 639-643 - Bradley E. Layton, Stephanie M. Sullivan, John J. Palermo, Gregory J. Buzby, Rishi Gupta, Richard E. Stallcup III:
Nanomanipulation and aggregation limitations of self-assembling structural proteins. 644-649 - Nicolle Wilke, A. Mulcahy, S.-R. Ye, A. Morrissey:
Process optimization and characterization of silicon microneedles fabricated by wet etch technology. 650-656 - Haifa El-Sadi, Nabil Esmail
Simulation of complex liquids in micropump. 657-666 - Jemmy S. Bintoro, Peter J. Hesketh
CMOS compatible bistable electromagnetic microvalve on a single wafer. 667-672 - Frédéric Marty, Lionel Rousseau, Bassam Saadany, B. Mercier, Olivier Français
Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures. 673-677 - Gen-Wen Hsieh, Ching-Hsiang Tsai, Wei-Chih Lin
Anodic bonding of glass and silicon wafers with an intermediate silicon nitride film and its application to batch fabrication of SPM tip arrays. 678-682 - A. Pavolotsky
Micromachining approach in fabricating of THz waveguide components. 683-686
Volume 36, Number 8, August 2005
- J. W. Wan, Wen-Jun Zhang
Influence of transient flow and solder bump resistance on underfill process. 687-693 - R. Al Asmar, G. Ferblantier, J. L. Sauvajol, Alain Giani, A. Khoury, A. Foucaran:
Fabrication and characterisation of high quality ZnO thin films by reactive electron beam evaporation technique. 694-699 - Adam Augustin, Bartosz Maj, Arno Kostka:
A structure oriented compact thermal model for multiple heat source ASICs. 700-704 - M. A. Mastro, J. R. LaRoche, N. D. Bassim, C. R. Eddy:
Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT. 705-711 - Han-Chang Tsai:
Investigation of electromagnetic radiation induced by conducting wire of nanometer multi-quantum well device on InGaN LED. 712-717 - N. G. Shankar, Z. W. Zhong:
A new rule-based clustering technique for defect analysis. 718-724 - C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang:
The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations. 725-728 - T. K. H. Starke, Petar Igic:
Feedback supported isolation structure for blocking of minority leakage carriers in power integrated circuits. 729-731 - M. Alvaro, Alina Caddemi
Temperature and bias investigation of self heating effect and threshold voltage shift in pHEMT's. 732-736 - Xi-Ning Wang, Xiao-Lin Zhao, Yong Zhou, Xu-Han Dai, Bing-Chu Cai:
Fabrication and performance of novel RF spiral inductors on silicon. 737-740 - Fengming Zhang, Rui Tang, Yong-Bin Kim:
SET-based nano-circuit simulation and design method using HSPICE. 741-748 - Grace Wang, S. Balakumar, S. C. Hwee, Rakesh Kumar, T. Hara:
Enhancement of adhesion strength of Cu layer with low dielectric constant SiC: H liners in Cu interconnects. 749-753 - Costas Psychalinos
Switched-current (SI) integrators with reduced effect of transistor mismatches. 754-762 - Erik Hernández, Roc Berenguer
An integrated up-converter circuit in 0.8mum SiGe technology for TV applications. 763-769 - Jee-Youl Ryu, Bruce C. Kim:
Low-cost test technique using a new RF BIST circuit for 4.5-5.5GHz low noise amplifiers. 770-777 - H. Rodríguez-Coppola, F. García-Moliner, Joaquín Tutor-Sánchez:
Polarisability of a confined multisubband electron gas with exchange and correlation interactions. 778-785
Volume 36, Number 9, September 2005
- Daniela De Venuto
International Symposium on Quality Electronic Design. 787-788 - Huifang Qin, Yu Cao, Dejan Markovic, Andrei Vladimirescu, Jan M. Rabaey:
Standby supply voltage minimization for deep sub-micron SRAM. 789-800 - Bhaskar Chatterjee, Manoj Sachdev, Ram Krishnamurthy:
Designing leakage tolerant, low power wide-OR dominos for sub-130nm CMOS technologies. 801-809 - Daniela De Venuto
Testing high resolution SigmaDelta ADC's by using the quantizer input as test access. 810-819 - Achintya Halder, Abhijit Chatterjee:
Test generation for specification test of analog circuits using efficient test response observation methods. 820-832 - Cristian Grecu, Partha Pratim Pande, André Ivanov, Res Saleh:
Timing analysis of network on chip architectures for MP-SoC platforms. 833-845 - Meigen Shen, Jian Liu, Li-Rong Zheng, Esa Tjukanoff, Hannu Tenhunen:
Robustness enhancement through chip-package co-design for high-speed electronics. 846-855 - Sobeeh Almukhaizim, Petros Drineas
Compaction-based concurrent error detection for digital circuits. 856-862 - Volkan Kursun
Monolithic voltage conversion in low-voltage CMOS technologies. 863-867
Volume 36, Number 10, October 2005
- Jesús González Gomez, Isaac Hernández-Calderón
Preface for SLAFES XVI proceedings. 869 - F. García-Moliner:
Quasiregular heterostructures: An overview of the current situation. 870-875 - F. García-Moliner:
Why green functions for matching? 876-881 - Victor R. Velasco:
Electronic spectra of quasi-regular Fibonacci systems: Analysis of simple 1D models. 882-885 - Yuri G. Gurevich, Antonio Ortiz, Georgiy N. Logvinov, Igor N. Volovichev
Transport phenomena in bipolar semiconductors: a new point of view. 886-889 - R. Baquero:
SGFM and the new FISIM states. 890-892 - Luis Salvador Froufe-Pérez
A Monte Carlo approach to determine conductance distributions in quasi-one-dimensional disordered wires. 893-899 - Jean-Marc Broto, B. Raquet, M. N. Baibich, M. Costes, H. Rakoto, S. Lambert, Antoine Maignan
Electronic transport in one-dimensional Ca3Co2O6 single crystal. 900-906 - Ismardo Bonalde:
Low temperature magnetic penetration depth in d-wave superconductors. 907-912 - Gloria M. Buendía
Surface scaling analysis of hydrogels: From multiaffine to self-affine scaling. 913-916 - E. Corona-Organiche, E. López-Cruz, C. Vázquez-López, Juan E. Morales:
The interferometric mirage effect method: The determination of the thermal diffusivity of CdMnTe. 917-921 - Angela S. Camacho
Intersubband transitions in quantum wells as sources of Thz radiation. 922-927 - Juan Angel Sans
Optical properties of wurtzite and rock-salt ZnO under pressure. 928-932 - M. Giffard, N. Mercier, G. Mabon, X. Nguyen Phu, M. Sylla, P. Delhaès, Humberto Soscún, Olga Castellano, Javier Hernández, Leonardo J. Rodríguez:
Chiral salts for nonlinear optics: Prospects and achievements. 933-938
Volume 36, Number 11, November 2005
- Magnus Willander, Omer Nur
Solid and soft nanostructured materials: Fundamentals and applications. 940-949 - Mohamed Henini
Advances in self-assembled semiconductor quantum dot lasers. 950-956 - Manfred Helm
Efficient silicon based light emitters. 957-962 - Shunfeng Li, Jörg Schörmann, Alexander Pawlis, Donat Josef As, Klaus Lischka:
Cubic InGaN/GaN multi-quantum wells and AlGaN/GaN distributed Bragg reflectors for application in resonant cavity LEDs. 963-968 - Patrick Soukiassian, Vincent Derycke
Atomic scale engineering of nanostructures at silicon carbide surfaces. 969-976 - Virgilio de Carvalho dos Anjos
Thermal-lens and photo-acoustic methods for the determination of SiC thermal properties. 977-980 - M. S. Medeiros, Ronaldo Domingues Mansano, Ana Paula Mousinho:
Photoelectric effects of nanostructured amorphous carbon films. 981-984 - Isaac Hernández-Calderón
Fine tuning of the emission of ultra-thin quantum wells of CdSe and CdTe by modification of the growth temperature. 985-988 - Frederico D. Menezes
CdTe/CdS core shell quantum dots for photonic applications. 989-991 - Walter M. de Azevedo
Visible photoluminescence from Ge nanoclusters implanted in nanoporous aluminum oxide films. 992-994 - F. M. Nodari, Marlus Koehler
Electrical aspects of photovoltaic devices based on bi-layer organic semiconducting materials. 995-997 - J. S. Soares
Ab initio calculation of the structural and electronic properties of the SiC (100) Surfaces. 998-1001 - S. C. P. Rodrigues Jr., M. N. d'Eurydice, Guilherme Matos Sipahi
Design of InGaN/AlInGaN superlattices for white-light device applications. 1002-1005 - F. F. de Medeiros, Eudenílson L. Albuquerque
Exciton-polaritons in nanostructured nitride superlattices. 1006-1010 - J. B. da Silva Jr., Elder A. de Vasconcelos
Statistical analysis of topographic images of nanoporous silicon and model surfaces. 1011-1015 - Fábio Menezes de Souza Lima, A. B. Veloso, A. L. A. Fonseca, O. A. C. Nunes Jr., Eronides Felisberto da Silva Júnior:
Variational results for electron mobility in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. 1016-1019 - Viola Lemos, Silvete Guerini
Li-inserted carbon nanotube Raman scattering. 1020-1022 - Ricardo C. Goncalves da Silva, Henri Boudinov, R. R. B. Correia:
Design and development of two-dimensional position sensitive photo-detector. 1023-1025 - J. S. Soares
Ab initio calculation of the SiC (100) surfaces phonon dispersion. 1026-1028 - M. N. d'Eurydice, Guilherme Matos Sipahi
Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. 1029-1033 - A. M. Alcalde, O. O. Diniz Neto, G. E. Marques:
Spin-flip relaxation due to phonon macroscopic deformation potential in quantum dots. 1034-1037 - Ihosvany Camps
Negative charged excitons in double barrier diodes. 1038-1040 - E. Souto
Magneto-quantum oscillations of the Korringa relaxation rate of manganese ion near a two-dimensional electron gas. 1041-1044 - A. P. Castro, H. W. Leite Alves:
Ab initio study of the nitridation of the GaAs (100) surfaces. 1045-1048 - C. L. N. Oliveira, Andrey Chaves
Quantum confinement of carriers in heterostructured GaAs/GaP quantum wires. 1049-1051 - V. M. Apel, E. V. Anda
Electronic properties of interacting quantum dots. 1052-1054 - Patricia Lopes Barros de Araújo, Elmo Silvano de Araújo, R. F. S. Santos, Ana Paula Lima Pacheco:
Synthesis and morphological characterization of PMMA/polyaniline nanofiber composites. 1055-1057 - S. K. Medeiros, Eudenílson L. Albuquerque
Structural and optical properties of CaO. 1058-1061
Volume 36, Number 12, December 2005
- Bozena Kaminska, Stephen K. Sunter, Salvador Mir:
Analog and mixed signal test techniques for SOC development. 1063 - Román Mozuelos, Yolanda Lechuga
Test of a switched-capacitor ADC by a built-in charge sensor. 1064-1072 - Eduardo Romero
Test of switched-capacitor ladder filters using OBT. 1073-1079 - Guillaume Prenat, Salvador Mir, Diego Vázquez, Luís Rolíndez:
A low-cost digital frequency testing approach for mixed-signal devices using SigmaDelta modulation. 1080-1090 - Anand Gopalan, Martin Margala
A current based self-test methodology for RF front-end circuits. 1091-1102 - Hans G. Kerkhoff:
The test search for true mixed-signal cores. 1103-1111 - Antonio Andrade Jr., Gustavo Vieira, Tiago R. Balen, Marcelo Lubaszewski, Florence Azaïs, Michel Renovell:
Built-in self-test of global interconnects of field programmable analog arrays. 1112-1123
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