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Souvik Mahapatra
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- affiliation: IIT Bombay, Mumbai, India
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2020 – today
- 2024
- [c22]Karansingh Thakor, Nikhil Rangarajan, Himanshu Diwakar, Rashmi Saikia, Tarun Samadder, Souvik Mahapatra, Shyam Raghunathan, Yingda Dong:
Comprehensive physics-based modeling of post-cycling long-term data retention in 176L 3-D NAND Flash Memories. IMW 2024: 1-4 - [c21]Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Khandker Akif Aabrar, Taeyoung Song
, Sharadindu Gopal Kirtania, Dipjyoti Das, Chinsung Park, Nashrah Afroze, Mengkun Tian, Shimeng Yu, Ahmad Ehtesham Islam, Suman Datta, Souvik Mahapatra, Asif Islam Khan:
Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions. IRPS 2024: 1-5 - [c20]Rashmi Saikia, Himanshu Rai, Souvik Mahapatra:
Modeling of Post-Cycling Retention Bake in 3-D CTF TLC NAND Arrays. IRPS 2024: 1-6 - [c19]Karansingh Thakor, Payel Chatterjee, Souvik Mahapatra:
A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions. IRPS 2024: 1-6 - [c18]Leitao Liu, Jingtian Fang, Ashish Pal, Plamen Asenov, Mohit Bajaj, Bei Deng, Xi-Wei Lin, Souvik Mahapatra, Subi Kengeri, El Mehdi Bazizi:
Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology. IRPS 2024: 7 - 2023
- [c17]Rashmi Saikia, Aseer Ansari
A Physics-based Model for Long Term Data Retention Characteristics in 3D NAND Flash Memory. IRPS 2023: 1-6 - 2022
- [c16]Himanshu Diwakar
Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETs. IRPS 2022: 55-1 - [c15]Nilotpal Choudhury, Ayush Ranjan, Souvik Mahapatra:
Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress. IRPS 2022: 56-1 - [c14]Nirmaan Shanker, Li-Chen Wang, Suraj S. Cheema, Wenshen Li, Nilotpal Choudhury, Chenming Hu, Souvik Mahapatra, Sayeef S. Salahuddin:
On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs. VLSI Technology and Circuits 2022: 421-422 - 2021
- [c13]Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs. IRPS 2021: 1-8 - [c12]Dimple Kochar
Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI. IRPS 2021: 1-7 - [c11]Satyam Kumar, Tarun Samadder, Karansingh Thakor, Uma Sharma, Souvik Mahapatra:
Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs. IRPS 2021: 1-5 - [c10]Tarun Samadder, Satyam Kumar, Karansingh Thakor, Souvik Mahapatra:
A Theoretical Framework for Trap Generation and Passivation in NAND Flash Tunnel Oxide During Distributed Cycling and Retention Bake. IRPS 2021: 1-6 - 2020
- [c9]Wriddhi Chakraborty, Uma Sharma, Suman Datta, Souvik Mahapatra:
Hot Carrier Degradation in Cryo-CMOS. IRPS 2020: 1-5 - [c8]Nilotpal Choudhury, Narendra Parihar, Souvik Mahapatra:
Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range. IRPS 2020: 1-5 - [c7]Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra:
Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. IRPS 2020: 1-6 - [c6]Victor M. van Santen
BTI and HCD Degradation in a Complete 32 × 64 bit SRAM Array - including Sense Amplifiers and Write Drivers - under Processor Activity. IRPS 2020: 1-7
2010 – 2019
- 2019
- [j5]Sami Salamin
Modeling the Interdependences Between Voltage Fluctuation and BTI Aging. IEEE Trans. Very Large Scale Integr. Syst. 27(7): 1652-1665 (2019) - [c5]Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra:
On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs. IRPS 2019: 1-8 - 2018
- [j4]Souvik Mahapatra, Narendra Parihar:
A review of NBTI mechanisms and models. Microelectron. Reliab. 81: 127-135 (2018) - [j3]James H. Stathis
Controversial issues in negative bias temperature instability. Microelectron. Reliab. 81: 244-251 (2018) - [j2]Paul Pfäffli, Hiu Yung Wong, X. Xu, Luca Silvestri, X. W. Lin, T. Yang, Ravi Tiwari
TCAD modeling for reliability. Microelectron. Reliab. 88-90: 1083-1089 (2018) - [c4]Narendra Parihar, Souvik Mahapatra:
Prediction of NBTI stress and recovery time kinetics in Si capped SiGe p-MOSFETs. IRPS 2018: 5-1 - 2016
- [c3]Victor M. van Santen, Hussam Amrouch, Narendra Parihar, Souvik Mahapatra, Jörg Henkel:
Aging-aware voltage scaling. DATE 2016: 576-581 - 2015
- [c2]Ankush Chaudhary, Ben Kaczer, Philippe J. Roussel, Thomas Chiarella, Naoto Horiguchi, Souvik Mahapatra:
Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI. IRPS 2015: 3 - [c1]Nilesh Goel
Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress. IRPS 2015: 4 - 2014
- [j1]Nilesh Goel
A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs. Microelectron. Reliab. 54(3): 491-519 (2014)
Coauthor Index
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