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Update May 7, 2017: Please note that we had to disable the phrase search operator (.) and the boolean not operator (-) due to technical problems. For the time being, phrase search queries will yield regular prefix search result, and search terms preceded by a minus will be interpreted as regular (positive) search terms.

found 174 matches

• 2015
• 
  Ankur Aggarwal, Enamul Kabir, David Huitink, Nipun Sinha, Emre Armagan, Keqin Cao:
  Coupled accelerated stress tests for comprehensive field reliability - Synergistic effects of moisture and temperature cycling. IRPS 2015: 6
• 
  Jae-Gyung Ahn, Ming Feng Lu, Nitin Navale, Dawn Graves, Ping-Chin Yeh, Jonathan Chang, S. Y. Pai:
  Product-level reliability estimator with budget-based reliability management in 20nm technology. IRPS 2015: 6
• 
  M. Akbal, G. Ribes, L. Vallier:
  New insight in plasma charging impact on gate oxide breakdown in FDSOI technology. IRPS 2015: 2
• 
  Stefano Ambrogio, Simone Balatti, Zhongqiang Wang, Yu-Sheng Chen, Heng-Yuan Lee, Frederick T. Chen, Daniele Ielmini:
  Data retention statistics and modelling in HfO2 resistive switching memories. IRPS 2015: 7
• 
  Hussam Amrouch, Javier Martín-Martínez, Victor M. van Santen, Miquel Moras, Rosana Rodríguez, Montserrat Nafría, Jörg Henkel:
  Connecting the physical and application level towards grasping aging effects. IRPS 2015: 3
• 
  Mark A. Anders, Patrick M. Lenahan, Aivars J. Lelis:
  Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC. IRPS 2015: 3
• 
  Ghadeer Antanius, Rutvi Trivedi, Robert Kwasnick:
  Platform qualification methodology: Face recognition. IRPS 2015: 3
• 
  Choelhwyi Bae, Sangwoo Pae, Cheong-sik Yu, Kangjung Kim, Yongshik Kim, Jongwoo Park:
  SRAM stability design comprehending 14nm FinFET reliability. IRPS 2015: 13
• 
  GeunYong Bak, Soonyoung Lee, Hosung Lee, Kyungbae Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Charlie Slayman:
  Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams. IRPS 2015: 3
• 
  Simone Balatti, Stefano Ambrogio, Zhongqiang Wang, Scott Sills, Alessandro Calderoni, Nirmal Ramaswamy, Daniele Ielmini:
  Understanding pulsed-cycling variability and endurance in HfOx RRAM. IRPS 2015: 5
• 
  Marco Barbato, Matteo Meneghini, Andrea Cester, Alessandro Barbato, Enrico Zanoni, Gaudenzio Meneghesso, Giovanna Mura, Diego Tonini, A. Voltan, Giorgio Cellere:
  Stress-induced instabilities of shunt paths in high efficiency MWT solar cells. IRPS 2015: 3
• 
  Simon Van Beek, Koen Martens, Philippe Roussel, Gabriele Luca Donadio, Johan Swerts, Sofie Mertens, Gouri Sankar Kar, Tai Min, Guido Groeseneken:
  Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. IRPS 2015: 4
• 
  A. Benoist, S. Denorme, X. Federspiel, Bruno Allard, Philippe Candelier:
  Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology. IRPS 2015: 3
• 
  Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu:
  Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS 2015: 2
• 
  A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo:
  Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS 2015: 5
• 
  M. Nasir Bhuyian, Durga Misra:
  Reliability of HfAlOx in multi layered gate stack. IRPS 2015: 3
• 
  Nicolas Borrel, Clement Champeix, Mathieu Lisart, Alexandre Sarafianos, Edith Kussener, Wenceslas Rahajandraibe, Jean-Max Dutertre:
  Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulation. IRPS 2015: 1
• 
  Cyril Bottoni, Benjamin Coeffic, Jean-Marc Daveau, Gilles Gasiot, Fady Abouzeid, Sylvain Clerc, Lirida A. B. Naviner, Philippe Roche:
  Frequency and voltage effects on SER on a 65nm Sparc-V8 microprocessor under radiation test. IRPS 2015: 12
• 
  David Burnett, Sriram Balasubramanian, Vivek Joshi, Sanjay Parihar, Jack M. Higman, C. Weintraub:
  SRAM Vmax stability considerations. IRPS 2015: 6
• 
  Andrea Cattaneo, Sandro Pinarello, Jan-Erik Mueller, Robert Weigel:
  Impact of DC and RF non-conducting stress on nMOS reliability. IRPS 2015: 4
• 
  Umberto Celano, Ludovic Goux, Attilio Belmonte, Karl Opsomer, Christophe Detavernier, Malgorzata Jurczak, Wilfried Vandervorst:
  Conductive filaments multiplicity as a variability factor in CBRAM. IRPS 2015: 11
• 
  Andrea Cester, Nicola Wrachien, Massimiliano Bon, Gaudenzio Meneghesso, Roberta Bertani, Roberto Tagliaferro, Simone Casolucci, Thomas M. Brown, Andrea Reale, Aldo Di Carlo:
  Degradation mechanisms of dye-sensitized solar cells: Light, bias and temperature effects. IRPS 2015: 3
• 
  C. W. Chang, S. E. Liu, B. L. Lin, C. C. Chiu, Y.-H. Lee, K. Wu:
  Thermal behavior of self-heating effect in FinFET devices acting on back-end interconnects. IRPS 2015: 2
• 
  M. N. Chang, Y.-H. Lee, S. Y. Lee, C. C. Chiu, D. Maji, K. Wu:
  An investigation of capacitance aging model for extreme low-k and high-k dielectrics. IRPS 2015: 3
• 
  Ankush Chaudhary, Ben Kaczer, Philippe J. Roussel, Thomas Chiarella, Naoto Horiguchi, Souvik Mahapatra:
  Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI. IRPS 2015: 3
• 
  Yuan-Chuan Steven Chen, Dave Budka, Auston Gibertini, Joe Davis:
  Power debug on Fully Integrated Voltage Regulators (FIVR) circuitry introduced deep low power states. IRPS 2015: 2
• 
  I. K. Chen, C. L. Chen, Y.-H. Lee, R. Lu, Y. W. Lee, H. H. Hsu, Y. W. Tseng, Y. W. Lin, J. R. Shih:
  New TDDB lifetime model for AC inverter-like stress in advance FinFET structure. IRPS 2015: 5
• 
  Fen Chen, Carole Graas, Michael A. Shinosky, Chad Burke, Kai D. Feng, Craig Bocash, Ramachandran Muralidhar:
  A method for rapid screening of various low-k TDDB models. IRPS 2015: 3
• 
  L. D. Chen, B. L. Lin, M.-H. Hsieh, C. W. Chang, J. S. Tsai, J. C. Peng, C. C. Chiu, Y.-H. Lee:
  Study of a new electromigration failure mechanism by novel test structure. IRPS 2015: 2
• 
  Fen Chen, Erik McCullen, Cathryn Christiansen, Michael A. Shinosky, Roger Dufresne, Prakash Periasamy, Rick Kontra, Carole Graas, Gary StOnge:
  Diagnostic electromigration reliability evaluation with a local sensing structure. IRPS 2015: 2

skipping 144 more matches