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Publication search results
found 263 matches
- 2006
- Paula Ghedini Der Agopian, João Antonio Martino
, Eddy Simoen, Cor Claeys:
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. Microelectron. J. 37(8): 681-685 (2006) - R. Ajjel, Hichem Maaref:
Electrical properties of GaAs-Al0.46Ga0.54As superlattice within a wider quantum well. Microelectron. J. 37(11): 1404-1407 (2006) - Mohmmad T. Alam, S. K. Islam:
A modified model for Si/SiGe MOS-gate delta-doped HEMTs. Microelectron. J. 37(9): 938-942 (2006) - A. Albina, P. L. Taberna
, J. P. Cambronne, P. Simon, E. Flahaut, Thierry Lebey
:
Impact of the surface roughness on the electrical capacitance. Microelectron. J. 37(8): 752-758 (2006) - Amara Amara, Frédéric Amiel, Thomas Ea:
FPGA vs. ASIC for low power applications. Microelectron. J. 37(8): 669-677 (2006) - Sanguan Anantathanasarn, Richard Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, Tjibbe de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans:
Wavelength controlled InAs/InP quantum dots for telecom laser applications. Microelectron. J. 37(12): 1461-1467 (2006) - Antonella Arena, Nicola Donato
, Giovanni Pioggia
, G. Rizzo, Gaetano Saitta:
Preparation and optical characterization of photosensitive multilayered structures based on polythiophenes and tetracyanoquinodimethane. Microelectron. J. 37(11): 1384-1388 (2006) - H. S. Ashour, A. I. Ass'ad, M. M. Shabat, Majdi S. Hamada:
Electronic conductance in binomially tailored quantum wire. Microelectron. J. 37(1): 79-83 (2006) - R. Al Asmar, J.-P. Atanas
, Y. Zaatar, J. Podlecki, A. Foucaran:
Characterization and ellipsometric investigation of high-quality ZnO and ZnO(Ga2O3) thin alloys by reactive electron-beam co-evaporation technique. Microelectron. J. 37(10): 1080-1085 (2006) - Paola Atkinson, S. P. Bremner, D. Anderson, G. A. C. Jones, David A. Ritchie
:
Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates. Microelectron. J. 37(12): 1436-1439 (2006) - Davide Baderna, Alessandro Cabrini, Marco Pasotti, Guido Torelli:
Power efficiency evaluation in Dickson and voltage doubler charge pump topologies. Microelectron. J. 37(10): 1128-1135 (2006) - Seong-Chan Bae, Sie-Young Choi:
Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode. Microelectron. J. 37(2): 167-173 (2006) - Kris Baert
, Bert Gyselinckx, Tom Torfs, Vladimir Leonov, Refet Firat Yazicioglu, Steven Brebels, Stéphane Donnay, J. Vanfletern, M. Pastreen, Eric Beyne
, Chris Van Hoof
:
Technologies for highly miniaturized autonomous sensor networks. Microelectron. J. 37(12): 1563-1568 (2006) - Mariana Pelissari Monteiro Aguiar Baroni
, Reinaldo R. Rosa
, A. Ferreira da Silva, I. Pepe, Lucimara Stolz Roman
, F. M. Ramos, Rajeev Ahuja
, C. Persson, E. Veje:
Modeling and gradient pattern analysis of irregular SFM structures of porous silicon. Microelectron. J. 37(4): 290-294 (2006) - Bruno Bêche, N. Pelletier, Etienne Gaviot, R. Hierle, Antoine Goullet
, Jean-Pierre Landesman
, J. Zyss:
Conception of optical integrated circuits on polymers. Microelectron. J. 37(5): 421-427 (2006) - Lotfi Beji, Ali Missaoui, Afif Fouzri
, Hafedh Ben Ouada, Hichem Maaref, Abdelaziz Bouazizi:
Nanostructurale nature of the porous GaAs layer formed on p+-GaAs substrate by electrochemical anodization. Microelectron. J. 37(8): 783-785 (2006) - Vitezslav Benda:
The quest for optimum construction and technology of power semiconductor devices. Microelectron. J. 37(3): 189 (2006) - Vitezslav Benda, M. Cerník, Václav Papez:
OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradient. Microelectron. J. 37(3): 217-222 (2006) - A. Benfdila, Francis Balestra:
On the drain current saturation in short channel MOSFETs. Microelectron. J. 37(7): 635-641 (2006) - Luca Benini
, Elisabetta Farella
, Carlotta Guiducci:
Wireless sensor networks: Enabling technology for ambient intelligence. Microelectron. J. 37(12): 1639-1649 (2006) - Isabelle Bertrand, Jean-Marie Dilhac, Philippe Renaud, Christian Ganibal:
Large area recrystallization of thick polysilicon films for low cost partial SOI power devices. Microelectron. J. 37(3): 257-261 (2006) - Marc Bigas, Enric Cabruja
:
Characterisation of electroplated Sn/Ag solder bumps. Microelectron. J. 37(4): 308-316 (2006) - Marc Bigas, Enric Cabruja
, Josep Forest
, Joaquim Salvi
:
Review of CMOS image sensors. Microelectron. J. 37(5): 433-451 (2006) - Kanishka Biswas, Soumen K. Das
, S. Kal:
Analysis and prevention of convex corner undercutting in bulk micromachined silicon microstructures. Microelectron. J. 37(8): 765-769 (2006) - Kanishka Biswas, Soumen K. Das
, D. K. Maurya, S. Kal, S. K. Lahiri:
Bulk micromachining of silicon in TMAH-based etchants for aluminum passivation and smooth surface. Microelectron. J. 37(4): 321-327 (2006) - Kanishka Biswas, S. Kal:
Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon. Microelectron. J. 37(6): 519-525 (2006) - Marija Blagojevic, Maher Kayal, Daniela De Venuto
:
FD SOI Hall sensor electronics interfaces for energy measurement. Microelectron. J. 37(12): 1576-1583 (2006) - A. Bourennane, Marie Breil, Jean-Louis Sanchez, J. Jalade:
A vertical monolithical MOS thyristor bi-directional device. Microelectron. J. 37(3): 223-230 (2006) - L. Bouzaïene, N. Imbarek, Laarbi Sfaxi, Hichem Maaref:
GaAs substrate orientation dependence of resonant quasi-level lifetime in 2D-2D InGaAs/GaAs resonant tunneling devices. Microelectron. J. 37(9): 892-896 (2006) - Abdellatif Bouzidi, Hasna Hamzaoui, Ahmed S. Bouazzi, Bahri Rezig:
Analytic computation of the photocurrent density in a n-6H-SiC/p-Si/n-Si/p-Si0.8Ge0.2 multilayer solar cell. Microelectron. J. 37(5): 388-394 (2006)
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