The study of micro/nanoscale heat transfer is of significant fundamental and practical importance due to the following reasons. First, the physical mechanisms of heat transfer at the micro/nanoscale can be very different and much more complicated than at the macroscale. In addition, micro/nanoscale heat transfer is relevant to diverse applications such as thermal management in nanoelectronics and energy conversion devices including photovoltaics and thermoelectrics. Yet, the experimental studies of micro/nanoscale heat transfer have lagged far behind the theory. Therefore, in this work, we experimentally study both heat radiation and conduction at the micro/nanoscale using microfabricated suspended devices and beam-offset frequency domain thermoreflectance, with three related topics.
First, we experimentally explore near-field radiative heat transfer (NFRHT) in the “dual nanoscale” regime in which both the characteristic dimensions of the emitter and receiver, and the vacuum gap spacing between them, are in the deep subwavelength regime (e.g., 100 nm and below) by using microfabricated suspended devices. Specifically, NFRHT between the two coplanar SiC membranes with thickness comparable to or smaller than their vacuum gap spacing of ~100 nm is studied for the first time. We show that a new physical mechanism introduced by electromagnetic corner and edge modes dominates NFRHT in this dual subwavelength regime and leads to a substantially high heat transfer coefficient of 800 W/m2K at a temperature of 300 K for a membrane thickness of 20 nm. This heat transfer coefficient is 5 times larger than that calculated for a reference scenario of heat transfer between two infinite SiC surfaces separated by a vacuum gap of 100 nm, and 1200 times larger than a reference scenario using classical view factors to calculate the heat transfer between two blackbodies of the same sizes as the membranes. Such a high heat transfer coefficient may have the potential to find applications such as localized radiative cooling, thermal management technologies, and energy conversion devices.
The next topic is related to the thermal conductivity measurements of polycrystalline SiC thin films grown by LPCVD. The effects of post-deposition thermal annealing on the film microstructures and thus the thermal conductivity of SiC are studied using microfabricated suspended devices. By annealing the films at 1100 oC for at least 2 hours, the grain size increases from 5.5 nm to 6.6 nm and the porosity decreases from 6.5% to practically fully dense, with the combined effect of increasing the measured thermal conductivity near room temperature by 34%, from 5.8 W/m-K to 7.8 W/m-K. The thermal conductivity measurements also show a very good agreement (better than 3%) with a simple model based on kinetic theory combined with a Maxwell-Garnett porosity correction. Such information is important for the thermal management of various SiC thin film applications ranging from MEMS to optoelectronic devices.
Finally, in order to facilitate further thermal conductivity measurements, a scannable, non-contact and relatively simple technique called beam-offset frequency domain thermoreflectance (BO-FDTR) is explored and discussed. Specifically, we extend previous BO-FDTR, which had been limited to transversely isotropic materials, to measure the thermal conductivity tensor for a more general case of materials lacking in-plane symmetry (i.e., transversely anisotropic materials). Extensive sensitivity analysis is performed to determine appropriate heating frequencies and beam offsets for the measurements. We demonstrate this new technique by measuring the thermal conductivity tensor of a model transversely anisotropic material x-cut quartz (<110> α-SiO2) along with control measurements on two transversely isotropic materials, sapphire and highly oriented pyrolytic graphite (HOPG). All of the measurements are in very good agreement with literature values. In addition, when isotropic directions are present, the measurements show excellent self-consistency in correctly identifying them, with residual errors less than 4%. This extended BO-FDTR technique shown in this work may facilitate future heat transfer study on a broader class of materials with arbitrary in-plane anisotropy.