JPS5873994A - Electroluminescent device and method of producing same - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electroluminescence device (hereinafter referred to as "EL device") and a method for manufacturing the same.

In general, WLMW is a p-luminescence layer (hereinafter referred to as the "Nari layer") consisting of zinc selenide, zinc sulfide, etc. containing a trace amount of manganese, which emits light when driven by alternating current voltage or logical vapor pressure. and 1 electrode layer on both sides thereof, it is expected to be a promising component of a device.

Therefore, in the 01L device, it is important that the driving voltage is low (ToJ), and for this reason, an absolute Il' layer is required on both sides of the tori layer, and a single current voltage driven EL device has been proposed. However, this * current positive drive KL snow protection Kkg prevents excessive current from flowing locally when excessive voltage is applied, and also prevents L from flowing easily when dielectric breakdown occurs. To prevent this, it is necessary to provide a high-resistance □tei layer that is laminated with the ML layer! In the first example, the binding device IIK is used to bind gallium, arsenic, zinc selecide, etc.
On the other hand, an optical amplifier is known as an IL device that utilizes the features of the EL layer, and this is a high-resistance semiconductor layer as described above. It is constructed by laminating a photoconductive semiconductor layer, which may also serve as a semiconductor layer, on a KL layer. In this way, in the actual EL device 1, it is required that a semiconductor layer be provided as the NLIKm layer for the purpose of -0. Ru.

However, conventional 01L devices having such semiconductor layers generally have short service life and low resolution.

This is due to the small moat-proofing effect of the semiconductor layer.
This is because moisture may enter the EL layer, and the substance constituting the EL layer may undergo deterioration due to the action of current heat generated during driving, resulting in film peeling. The injection flow density t) in the layer is sharpened in both directions by decreasing the O resistivity with concentration.

In addition to the above, there are also a number of photoconductive semiconductor layers, such as sulfide copper conductors, which have a long lead time and are particularly applicable to photoconductive ILs for light intensification. 10 I◆ or more, as a result, for example, it is possible to detect moving light
*The drawback of m is that the photoconductive properties of a monolithic semiconductor vary faithfully depending on the amount of incident light. One drawback is that a photoconductive semiconductor layer made of cadmium oxide requires a layer line to increase the sensitivity on the long wavelength side by doping copper or the like. be.

The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a binding device having a long service life and high resolution.

Another object of the present invention is to further shorten the photoresponse time and improve its responsiveness.
゛': Must have good WILE - ``There is a K that provides a rich device for optical amplification that has good WILE.

The purpose of this invention is as follows. The object of the present invention is to provide a method by which a device can be manufactured very advantageously.

The present invention and one embodiment will be described below with reference to Figure 1tK.
The case of a device will be explained. .

In the present invention, as shown in No. 111, the glass base 1
j'311K For example, 02~
Sulfurized summer containing 2% by weight of manganese.

The lead acid was used to carve a 2000 to 4060 μm thick layer 33 of lead selenide containing the same amount of manganese.
Amorphous silicon C and below “a-INJ to IE”
, amorphous germanium (hereinafter referred to as "a-G.") and amorphous silico.

Germanium C or less ra-810G.)
A photoconductive semiconductor layer 34 consisting of one or more monolayers or multilayer laminates transported from among the three materials mentioned above.
An upper electrode layer 35 is formed on the photoconductive semiconductor layer 34 (for example, a transparent conductor made of indium oxide or tin oxide) on the photoconductive semiconductor layer 34.
Then, a small voltage, for example, 10 to 100 V, is applied to the DC voltage 11B6 between the lower electrode layer 32 and the lower electrode layer 32.

In the illustrated example, the photoconductive semiconductor layer 34F1, the thickness of the layer 33F, the thickness of the layer 34F1, the thickness of the layer 34M, the thickness of 0.5~1IAO11 [layer 34M111[X thickness so
~z@oMa'-nlIll;114C has a laminated structure, and affects the applied voltage as a layer and a directional barrier. In the weighing device configured as above, - Current H
36, the upper electrode layer 3
When the light L1 is incident, the photoconductive semiconductor layer 34
11 on both sides of the ML layer 330 part that is in contact with the part O because the electrical resistance of the part O that is irradiated with light decreases.
When FE is applied, the relevant part emits light, and this light valves the lower electrode layer 3.2 and the glass substrate 31 and emits light L.
It is preferable to form a light-shielding mt shadow to prevent light leakage on the conductive semiconductor layers 34 and 011 on the IIL layer 3, which are emitted to the outside as 2. , p layer, 111 layer, and 1lIII layer. In the present invention, the photoconductive semiconductor layer 34 has a -Choose from G* and a-81@Q* (9 is also OK)
JA-8111G@ is formed by an O-deposition method such as CVD, sputtering, vacuum evaporation, or Mll method, and has a dense structure, so moisture is
, has a large moisture-proofing effect that prevents moisture from entering the layer 33,
Therefore! The L layer 33 deteriorates and a long service life can be obtained at 1kscs, and the photoconductive semiconductor layer 34 itself does not have its resistivity lowered due to concentration, so it is not irradiated with light. The difference in resistance value at the boundary between the receiving part and the part in part 1 is uniform, and the change in the injected current density is sharp.
pair),,,, and above, high resolution can always be obtained.
□”″″□”□′Also photoconductive conductor layer 34
Due to the high mobility of the large carriers generated in , the photoresponse is rapid, and the response time required from the incidence of light Ll to the emission of light 2 can be made less than 119 seconds. Lead 11? '1llll property is good, and the change in resistance value when receiving that light corresponds to the amount of light, so as a result, the linearity of the proportional relationship between the amount of emitted light and the amount of incident light improves. The energy of the amount of incident light is 80■
W/-It is clear in the following range ・More K a -11 s
The peak of s value is 6501111%m-0@110
Since 011171 and a-111-Ge are in this relationship, there is no need for any increase in the photoconductive semiconductor layer 34.

In the above case, when zinc selenide is used for the influence of the KL layer 330, the lattice constant, electron affinity, etc. at the zero point are a2Ijs a -Ge, & -111-Ge. Since the matching is i-, especially when the overlapping layer 33 and the photoconductive semiconductor layer 34 are laminated in direct contact with each other, Kk%/
Ih - Effect of lowering drive voltage 1...

You can get the future.

In the present invention, the specific structure of the decorative photoconductive semiconductor layer 340 can be set in various ways. Also, as shown in Figure 112', light is transmitted onto the glass substrate 4f31 through the lower electrode layer 32! The m+11 semiconductor layer 34 is formed, and the EL layer 3 is formed thereon.
31, and a structure in which the upper electrode layer 35 is formed on the overlay layer 33 may also be used.In addition, by making the lower electrode layer 32 opaque, etc., it is possible to simply use it for light emission! ! L
If used as a device, the photoconductive semiconductor layer 34
Om! is simply a high-resistance semiconductor layer. To perform one's ability and
Among the effects mentioned above, the effects related to photoconductive properties cannot be obtained (1), but the effects of long service life and high resolution can be obtained as they are.

The photoconductive semiconductor 934 in the present Jitsumei tori device is WI
K can also be formed by known methods, but
It can be formed very suitably by the following method.

That is, as shown in FIG. 3, a vacuum pump (not shown) is connected via an exhaust path 3 having a Pelger IK butterfly valve 2 for controlling the vacuum chamber 1. This causes the inside of the Pelger 1 to be ``1~1G-gusset・rrO high vacuum state, 11!I test Perugia 11 Kt1m mounting board 4 is placed, and this is heated to 160℃.
While heating to N800°C, preferably 250 to 450°C, the back electrode is placed Km behind the evaporation substrate 40' using a DC electric current 116! 1Ko to -10kV preferably 11-1 to -6
Active hydrogen and hydrogen gas obtained by applying a kVOm flow negative voltage and discharging hydrogen gas in a gas discharge tube 7 provided with a Pelger IK outlet 1'# so that its outlet faces the base 4. A silicon evaporation source 8 was used to inject hydrogen ions into the bell jar 1 while injecting In2 into the evaporation substrate 4.
The silicon is evaporated by heating, and 1-11 into which hydrogen has been introduced is deposited on the vapor deposition substrate #i4 to form a photoconductive semiconductor □. - Show it in Figure 1! When obtaining an LSI device, a glass substrate 31 with a thinning layer 33 provided through the lower electrode layer 32 is used, and when obtaining an ILII sound as shown in the second WIIK, a glass substrate is used. A lower electrode layer 32 is provided on the electrode layer 31, and O is also used.

Furthermore, if a K-germanium evaporation source 10 (in place of the silicon evaporation lI8) is provided to evaporate germanium onto the evaporation substrate 4, water lI will be introduced and a highly effective photoconductive semiconductor layer will be formed. If evaporation is performed using both silicon evaporation j18 and germanium evaporation*1G, similarly hydrogen-IIXll1 a, 7g1・G
・A very powerful light conductive semi-solid layer is formed. ・Kk ≠ As above, Kti, resistance heating, electron gun heating, induction heating, etc. are used to heat the silicon evaporation*S and germanium evaporation source IO. 9. It is necessary to prevent coarse particles of the evaporation source material from flying off (due to bumping during evaporation) and adhering to the substrate 4.
Therefore, K can utilize a coarse particle scattering prevention member that is bent to form nine steam paths. S and S are shutters. In addition, as shown in 11411 in the gas drum tube 70 example, one cylindrical electrode member 22 having a gas inlet 21 and one end of this one electrode member 22 are connected to #Fj A discharge air conditioning member 24 made of, for example, cylindrical glass surrounding the discharge space 23, and a 11i girder at the other end of the discharge space member 240.
Ring with outlet 25.

[relative to] the other electrode member 26 of the shape, a single current or alternating current voltage is applied between the one electrode member 22 and the other electrode member 26; The hydrogen gas produced in the discharge space 23 generates hydrogen atoms and ionized hydrogen ions, which are composed of hydrogen atoms or molecules activated by lumiton energy, and ionized leaf ions from the outlet 25. ] is discharged. In this illustrated example, the discharge space member 24 has a structure that allows cooling water to flow through all of the double pipes. I'll do it.

The distance between the electrodes in the gas pipe II 7 is 10 to 1
saI], the applied voltage asoo to 5oov, and the pressure of the discharge chamber 23 is about 16-tte.rr.

Since the present invention is based on the above method, silicon evaporation I
I8) silicon vapor and/or germanium evaporation f
Germanium vapor from IJ10 flies through the Pel Jar 1 and deposits on the evaporation substrate 4, but since active hydrogen and hydrogen ions are present in the Pel Jar 1, these react with each other and are deposited on the substrate 4. Hydrogen was introduced, that is, the O dangrid pond was blocked by hydrogen atoms @-81
A thin layer of %a-G@%a-81-G is formed.

In such a method, the photoconductive semiconductor layer is formed by vapor deposition of silicon and/or germanium in the presence of active hydrogen and hydrogen ions obtained by discharging hydrogen gas. The degree and amount of activation of active hydrogen introduced into the Pelger 1 by controlling the heating temperature and applied voltage of the substrate 4, controlling the evaporation rate of silicon, and controlling the amount of hydrogen gas supplied and the discharge voltage in the gas discharge tube 7. and L that independently controls the amount of hydrogen ions.
Therefore, the ratio of hydrogen introduced can be controlled with a large degree of freedom, and when forming a=ltoG, the ratio of silicon and germanium can also be controlled with a large degree of freedom. Therefore, it is possible to form a photoconductive semiconductor layer which has a good amorphous state and has desired properties by a desired composition.

In addition, in this method, in order to deposit silicon and/or germanium, a large amount of aluminum is required by increasing the heating temperature of the silicon evaporation source 10 and/or the germanium evaporation source 10. degree)
Therefore, it is possible to form a photoconductive semiconductor layer of the required thickness in a short time, and it is also easy to form a large area of homogeneous thickness, and continuous film formation is also possible. Since it is easy, it can be carried out very advantageously on a one-hole scale.

Furthermore, doping can be easily performed using this method. Therefore, Kti, for example #l3Ii! As shown in Figure 1, dopant evaporation 1 [12 Put it in the Pelger 1 and add it together with silicon etc.
It is possible to use a method of introducing a hydride gas of a group V element such as dirane, phosphine, arsine, etc. into the perger l.

However, according to the method using the dopant evaporation source 12, the evaporation rate can be easily controlled, so that it is possible to easily form a material having conductivity as high as IIe) and II.

For example, when forming the photoconductive semiconductor layer 34 having the structure shown in the first WJK using a-81, the silicon evaporation source 8, the group 1 dopant evaporation source and A group Ⅰ dopant evaporation chamber is provided 1. While introducing active wood and hydrogen ions as described above, the silicon evaporation source 8 and the group 1 dopant evaporation source are first heated to form the pWI layer 34. Next, only silicon evaporation 1i8 is continued to form the i-doped layer 3411, and then the group (I) dopant evaporation source 1 is heated while silicon evaporation is continued to form a theoretical layer 34CI-shadow. According to the present invention, a scanning device [91] having a long service life and high resolution can be used with excellent photoresponsiveness and no need for sensitization. It is possible to provide an EL device for optical amplification as well as a method for manufacturing the same very advantageously.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram showing the configuration of an electroluminescent device for optical amplification according to an embodiment of the present invention, FIG. 2 is a clear diagram of another embodiment 011 of the present invention, and 1131II is a diagram showing the structure of an electroluminescence device for optical amplification according to an embodiment of the present invention. FIG. 4 is an explanatory cross-sectional view showing the configuration of the II manufacturing apparatus used, and FIG. 4 is an explanatory cross-sectional view of an example of a gas discharge tube. l...Pelger 2...Butterfly valve 3...Exhaust path 4--Vapor deposition substrate 7...Gas emitter tube 8--Silicon evaporation source 9--Back electrode 10...Germanium evaporation source 12-
...Doping agent evaporation source 21-...Gas inlet 22.26-
...Electrode □ member 23...Discharge space, 1:. 31...Glass substrate, 32--Lower electrode layer 33
...-IL layer 34...photoconductive semiconductor layer 3
5... Upper electrode layer Fig. 1 Fig. 2 Fig. 3 Fig. 4

Claims (1)

[Claims] 1) A laminate of a semiconductor layer and an electroluminescent layer, wherein the semiconductor layer is made of amorphous silicon, amorphous germanium, and hypomorphic silicon-germanium. 2) An electronic system consisting of a laminate of a semiconductor layer and an electronic sense layer. Apparatus and Manufacturing Method Firstly, the semiconductor layer is formed by depositing at least one of silicon and gelatinium in a vacuum chamber in the presence of active hydrogen ions. A method for manufacturing an electroluminescence device characterized by: