WO2009110414A1 - Method for forming bump - Google Patents

Method for forming bump Download PDF

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WO2009110414A1
WO2009110414A1 PCT/JP2009/053831 JP2009053831W WO2009110414A1 WO 2009110414 A1 WO2009110414 A1 WO 2009110414A1 JP 2009053831 W JP2009053831 W JP 2009053831W WO 2009110414 A1 WO2009110414 A1 WO 2009110414A1
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bump
substrate
metal dispersion
initial stage
electrode
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French (fr)
Japanese (ja)
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大竹健介
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007Surface contacts, e.g. bumps
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0242Shape of an individual particle
    • H05K2201/0257Nanoparticles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0364Conductor shape
    • H05K2201/0367Metallic bump or raised conductor not used as solder bump
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0104Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013Inkjet printing, e.g. for printing insulating material or resist
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14Related to the order of processing steps
    • H05K2203/1476Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing of the conductive pattern
    • H05K3/245Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231Shapes
    • H10W72/234Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/242Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu

Definitions

  • FIG. 1 shows how bumps are formed by discharging droplets of a metal dispersion.
  • a partial cross-sectional notation of the cut surface is omitted.
  • the metal dispersion gradually accumulates on top.
  • the wetting spread on the metal dispersion dry film by the second and subsequent discharges is smaller than the wetting spread on the electrode of the metal dispersion discharged the first time, resulting in the shape of the tail spread. It is thought that the bump which has is formed.
  • FIG. 2 is a diagram illustrating a procedure of the bump forming method according to the first embodiment.
  • the substrate 1 is, for example, a ceramic substrate, and a gold (Au) electrode 2 is previously formed on the upper surface thereof.
  • Au gold
  • As the metal dispersion for forming the bump a silver nanoink having a low viscosity of about 5 to 50 mPa ⁇ s in which silver (Ag) nanoparticles are dispersed in a solvent is used. Then, droplets are ejected a plurality of times on the upper portion of the electrode 2 by an ink jet method using the droplet ejection head 10, and a layer formed by the landing of silver nano ink droplets is stacked.
  • the silver nano ink is obtained by coating the surface of silver fine particles having an average particle diameter of 1 to 100 nm with a dispersing agent such as amine, alcohol, and thiol capable of coordinating with silver element, and stably dispersing in an organic solvent.
  • a dispersing agent such as amine, alcohol, and thiol capable of coordinating with silver element
  • silver nanoparticles are stably dispersed in the organic solvent without being aggregated in the organic solvent by the coating action of the dispersant.
  • a scavenger such as an acid anhydride takes up the dispersant. And it conducts, for example, by sintering at a low temperature of 250 ° C. or lower to form a junction.
  • money and copper can also be used besides silver.
  • silver nano ink is used as the bump material.
  • a non-metal dispersion or a resin dispersion such as a resistance paste or a photoresist may be used. Good.
  • the present invention can be similarly applied to the case where electrode wirings are formed at a narrow pitch.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Total discharge amount of silver nano ink droplets (31) for the first time (initial stage) is set in the range of 1/1.1-1/10 of total discharge amount of silver nano ink droplets (32) for the second and subsequent times on an electrode (2) formed on a substrate (1). Temperature of the substrate (1) during discharge for the first time (initial stage) is set higher than the temperature of the substrate (1) during discharge for the second and subsequent times (subsequent to initial stage). Since spread of the lower layer of a bump on the electrode (2) is limited and a bump is formed in a limited region, reduction in size of a pad formed on an electrode and reduction in pitch of the pads can be dealt with.

Description

バンプ形成方法Bump formation method

 この発明は、基板への実装用または他の電子部品との電気的接続用のバンプを、金属分散液の液滴吐出法により形成するバンプ形成方法に関するものである。 The present invention relates to a bump forming method for forming bumps for mounting on a substrate or for electrical connection with other electronic components by a droplet discharge method of a metal dispersion.

 特許文献1には、基体上に半導体装置を実装する際に用いるバンプの形成方法であって、基体または半導体装置のバンプ形成部に、金属微粒子を分散させてなる金属分散液を液滴吐出法によって設け、次いで、バンプ形成部に設けられた金属分散液を熱処理して金属製のバンプを形成するバンプの形成方法について開示されている。 Patent Document 1 discloses a bump forming method used when a semiconductor device is mounted on a substrate, and a metal dispersion obtained by dispersing metal fine particles in a bump forming portion of the substrate or the semiconductor device is a droplet discharge method. Then, a bump forming method is disclosed in which a metal dispersion provided in a bump forming section is heat treated to form a metal bump.

 このバンプ形成方法によれば、液滴吐出法によって金属分散液をバンプ形成部に吐出して、さらに熱処理してバンプを形成するので、装置として特に高価なものが必要とならず、また工程数も少ないことから装置の種類も少なくて済み、さらにフォトマスクなどの消耗品も必要としないことなどから、従来に比べコストが格段に低減され、また、液滴吐出法により金属分散液を所望箇所に必要量吐出することができるので、材料が無駄になることがほとんどなく、さらに、廃液などの産業廃棄物もほとんど生じないという効果があるとされている。 According to this bump forming method, the metal dispersion is discharged to the bump forming portion by the droplet discharge method and further heat-treated to form the bump, so that no particularly expensive apparatus is required and the number of steps The number of types of equipment can be reduced, and consumables such as photomasks are not required. Costs are significantly reduced compared to conventional methods. Therefore, it is said that there is almost no waste of material, and that there is almost no industrial waste such as waste liquid.

 また、このバンプの形成方法において、金属分散液を液滴吐出法によって設ける際の液滴吐出回数を複数回とし、一の回の液滴吐出量と他の回の液滴吐出量とを異ならせることにより、少なくとも下部と上部とで外径の異なるバンプを形成することも開示されている。 Also, in this bump forming method, the number of droplet discharges when the metal dispersion is provided by the droplet discharge method is set to a plurality of times, and the droplet discharge amount at one time is different from the droplet discharge amount at another time. It is also disclosed that bumps having different outer diameters are formed at least at the lower part and the upper part.

 特許文献2には、基盤上方に立体構造体を設ける工程を含む電子部品製造方法であって、導電性材料を含む液状の組成物を吐出し、組成物を乾燥させ基盤上方に導電性材料からなる第1の層を形成する第1工程と、第1の層上に導電性材料を含む組成物を吐出し、組成物を乾燥させ導電性材料からなる第2の層を形成する第2工程とを有して電子部品を製造する方法について開示されている。 Patent Document 2 discloses an electronic component manufacturing method including a step of providing a three-dimensional structure above a substrate, and discharging a liquid composition containing a conductive material, drying the composition, and discharging the conductive material above the substrate. A first step of forming the first layer, and a second step of discharging the composition containing the conductive material onto the first layer and drying the composition to form the second layer of the conductive material. And a method for manufacturing an electronic component.

 この電子部品製造方法によれば、立体構造体の一部を成す第1の層と第2の層とを積層することで、所望の立体構造体を得ることができ、また、第1の層および第2の層を形成する際には、例えばインクジェットプリンタと同様の機構を利用した液滴塗布方式で組成物の液滴を吐出し、乾燥して固化することで、フォトリソグラフのように工程数が多くなることなく、少ない工程、且つ低コストで微細な立体構造体を形成することができるという効果があるとされている。 According to this electronic component manufacturing method, a desired three-dimensional structure can be obtained by laminating the first layer and the second layer that form a part of the three-dimensional structure, and the first layer When forming the second layer, for example, by discharging a composition droplet by a droplet coating method using a mechanism similar to that of an inkjet printer, drying and solidifying, a process like a photolithography It is said that there is an effect that a fine three-dimensional structure can be formed in a small number of steps and at a low cost without increasing the number.

 また、この電子部品製造方法において、第2の吐出量を第1の吐出量より少量にすることが開示されている。このようにすることで、第1工程で組成物を吐出する位置と、第2工程で組成物を吐出する位置との間でずれが生じても、第1の層からはみ出すことなく第2の層を形成することが可能になり、第2工程で吐出した組成物が第1の層から垂れて形状が崩れたり、高さ精度が低下したりするなどの不具合を防止することができ、また、形成された立体構造体の先端が押圧されて第2の層が変形した場合でも第1の層からはみ出さないので、隣り合う立体構造体と短絡する可能性が低くなり、立体構造体を狭ピッチで配置することが可能になるという効果があるとされている。
特開2004-228375号公報 特開2003-218149号公報
In addition, in this electronic component manufacturing method, it is disclosed that the second discharge amount is smaller than the first discharge amount. By doing in this way, even if a shift occurs between the position where the composition is discharged in the first step and the position where the composition is discharged in the second step, the second layer does not protrude from the first layer. It is possible to form a layer, and it is possible to prevent problems such as the composition discharged in the second step dripping from the first layer and losing its shape, or the height accuracy is reduced. Even if the tip of the formed three-dimensional structure is pressed and the second layer is deformed, it does not protrude from the first layer, so the possibility of short-circuiting with the adjacent three-dimensional structure is reduced, and the three-dimensional structure is It is said that it is possible to arrange with a narrow pitch.
JP 2004-228375 A JP 2003-218149 A

 ここで、金属分散液の着滴後の濡れ広がり径について考える。
 特許文献1,2では、吐出量を意図的に変えて上部と下部とで径の異なる、特に下部の方が広い径を有するバンプを形成することについて示しているが、本願の発明者は実際には1回目の吐出量が2回目以降と比べて等量であっても(それ以上の場合はなおのこと)、1回目に吐出された金属分散液が電極上に濡れ広がった後、2回目以降に吐出された金属分散液は1回目の金属分散液の乾燥膜上において1回目ほどは濡れ広がらずに、その内側の範囲内に積み重なっていき、結果として裾広がりの形状を有するバンプが形成されてしまうという知見を得た。
Here, the wet spread diameter after landing of the metal dispersion is considered.
Patent Documents 1 and 2 show that the discharge amount is intentionally changed to form bumps having different diameters at the upper part and the lower part, in particular, the lower part has a wider diameter. Even if the first discharge amount is equal to the second discharge amount (even more than that), the first discharge after the metal dispersion liquid has spread on the electrode and the second and subsequent discharges. The metal dispersion discharged on the first layer does not spread as much as the first time on the dry film of the metal dispersion, but accumulates within the inner area, resulting in the formation of bumps having a hem-extended shape. I obtained the knowledge that

 図1は金属分散液の液滴の吐出によってバンプを形成する様子を示している。図1では、切断面の一部の断面表記を省略している。 FIG. 1 shows how bumps are formed by discharging droplets of a metal dispersion. In FIG. 1, a partial cross-sectional notation of the cut surface is omitted.

図1(A)は基板1の上面に形成されている電極2に対して液滴吐出ヘッド10から金属分散液滴13を吐出させた状態を示している。図1(B)はその後、吐出された金属分散液滴が電極2の表面に着滴して濡れ広がったバンプ14が形成された状態を示している。また、図1(C)は、金属分散液滴を複数回に分けて吐出させた後、熱処理して形成されるバンプの断面形状を示している。 FIG. 1A shows a state in which metal dispersion droplets 13 are ejected from the droplet ejection head 10 to the electrode 2 formed on the upper surface of the substrate 1. FIG. 1B shows a state in which bumps 14 are formed in which the ejected metal dispersion droplets have landed on the surface of the electrode 2 and have spread. FIG. 1C shows a cross-sectional shape of a bump formed by performing heat treatment after ejecting metal dispersed droplets in a plurality of times.

 このように、濡れ広がったバンプ14の底面部(バンプを山に例えたときの裾野部分)14aの上面に対して厚み方向に突出する中央吐出部14bが形成されるが、底面部の径が大きいバンプが形成されてしまうため、バンプを形成する電極の小パッド化やバンプの狭ピッチ化において、このことが非常に大きな問題となる。 As described above, the central discharge portion 14b protruding in the thickness direction is formed with respect to the upper surface of the bottom surface portion 14a of the bump 14 wetted and spread (a skirt portion when the bump is compared to a mountain), but the diameter of the bottom surface portion is small. Since a large bump is formed, this becomes a very big problem in reducing the pad size of the electrode for forming the bump and narrowing the pitch of the bump.

 そこで、この発明の目的は、底面部の径が大きくならずに、バンプを形成する電極の小パッド化やバンプの狭ピッチ化に対して適応するバンプ形成方法を提供することにある。 Therefore, an object of the present invention is to provide a bump forming method adapted to the reduction in the size of the pads for forming the bumps and the reduction in the pitch of the bumps without increasing the diameter of the bottom surface.

 上述の現象についての詳細は不明であるが、金属分散液滴の濡れ広がり径は、金属分散液滴の材質/吐出速度、着滴部の材質/表面粗さなどによって決定されるものと考えられる。そこで、上記の現象が生じる原因として次に述べるメカニズムが考えられる。 Although the details of the above phenomenon are unknown, it is considered that the wetting and spreading diameter of the metal dispersion droplet is determined by the material / discharge speed of the metal dispersion droplet, the material / surface roughness of the landing portion, etc. . Therefore, the following mechanism can be considered as the cause of the above phenomenon.

 すなわち、電極表面は凹凸があって、1回目に吐出される金属分散液滴は電極表面に対して接触角が小さく、容易に濡れ広がる。 That is, the electrode surface has irregularities, and the metal dispersion droplet ejected for the first time has a small contact angle with respect to the electrode surface and spreads easily.

 2回目以降に吐出される金属分散液滴は、既に形成された金属分散液の乾燥膜(ある程度以上に乾燥した状態の膜)上になされるが、1回目の金属分散液の乾燥膜は電極表面を平滑な状態としているので、金属分散液滴の接触角は大きい。すなわち、1回目ほどには濡れ広がらず、上に積み重なることになる。 The metal dispersion droplets discharged after the second time are formed on the already formed dry film of the metal dispersion (film that has been dried to a certain extent), but the first dry film of the metal dispersion is an electrode. Since the surface is in a smooth state, the contact angle of the metal dispersion droplet is large. In other words, it does not spread as much as the first time, but is stacked on top.

 3回目以降も2回目と同様に、金属分散液が徐々に上に積み重なる。 In the third and subsequent times, as in the second time, the metal dispersion gradually accumulates on top.

 このようにして、2回目以降の吐出による金属分散液乾燥膜上の濡れ広がりは、1回目に吐出された金属分散液の電極上への濡れ広がりより小さくなり、結果的に裾広がりの形状を有するバンプが形成されるものと考えられる。 In this way, the wetting spread on the metal dispersion dry film by the second and subsequent discharges is smaller than the wetting spread on the electrode of the metal dispersion discharged the first time, resulting in the shape of the tail spread. It is thought that the bump which has is formed.

 そこで、この発明は次の方法によってバンプを形成する。
(1)基板に形成された電極上に金属分散液の液滴を吐出して、当該金属分散液中に分散されている金属によるバンプを形成する際、金属分散液の液滴を初期段階とそれ以降の段階とに分けて吐出することとし、初期段階での吐出量をその後の段階での吐出量より少量とする。
Therefore, the present invention forms bumps by the following method.
(1) When a metal dispersion liquid droplet is ejected onto an electrode formed on a substrate to form a bump made of metal dispersed in the metal dispersion liquid, the metal dispersion liquid droplet is used as an initial stage. The discharge is divided into the subsequent stages, and the discharge amount in the initial stage is set to be smaller than the discharge amount in the subsequent stage.

(2)または、初期段階での基板の温度をその後の段階での基板の温度より高温とする。
(3)さらには、基板に形成された電極上に金属分散液の液滴を吐出して、当該金属分散液中に分散されている金属によるバンプを形成する際、金属分散液の液滴を初期段階とそれ以降の段階とに分けて吐出することとし、初期段階での基板の温度をその後の段階での基板の温度より高温とするとともに、初期段階での吐出量をその後の段階での吐出量より少量とする。
(2) Alternatively, the temperature of the substrate in the initial stage is set higher than the temperature of the substrate in the subsequent stage.
(3) Furthermore, when a metal dispersion liquid droplet is ejected onto the electrode formed on the substrate to form a bump made of metal dispersed in the metal dispersion liquid, the metal dispersion liquid droplet is Discharge is divided into an initial stage and subsequent stages, and the substrate temperature in the initial stage is set higher than the substrate temperature in the subsequent stage, and the discharge amount in the initial stage is set in the subsequent stage. Smaller than the discharge amount.

 上記(1)~(3)のいずれによっても、初期段階で吐出された金属分散液の基板電極上への濡れ広がりが抑えられ、しかも、その後の段階で吐出された金属分散液は初期段階で吐出された金属分散液の膜上に大きく濡れ広がることなく積み上げられる。その結果、底面部の径が小さなバンプが形成される。 In any of the above (1) to (3), the wetting and spreading of the metal dispersion discharged in the initial stage onto the substrate electrode is suppressed, and the metal dispersion discharged in the subsequent stage is suppressed in the initial stage. It is piled up without spreading greatly wet on the film of the discharged metal dispersion. As a result, a bump having a small diameter at the bottom is formed.

(4)前記初期段階およびその後の段階での吐出は、それぞれ複数の液滴を順次吐出するようにし、その吐出の回数によって初期段階での吐出量とその後の段階での吐出量とをそれぞれ定めるようにしてもよい。 (4) In the discharge in the initial stage and the subsequent stage, a plurality of droplets are sequentially discharged, and the discharge amount in the initial stage and the discharge amount in the subsequent stage are respectively determined by the number of discharges. You may do it.

 これにより、1回で吐出される液滴の量を制御するのではなく、吐出の回数すなわち離散量を制御することになり、全体の制御が容易となる。また、各段階での吐出総量の精度が高まり、バンプのプロフィール(断面形状)を高精度に定めることができる。 Thus, instead of controlling the amount of droplets ejected at one time, the number of ejections, that is, the discrete amount is controlled, and the overall control becomes easy. In addition, the accuracy of the total discharge amount at each stage is increased, and the bump profile (cross-sectional shape) can be determined with high accuracy.

(5)前記金属分散液に含まれる溶媒は、沸点が200℃以上の有機溶媒であることが望ましい。そのことにより、有機溶媒の乾燥が緩やかに進むため、着滴した金属分散液はその前に着滴した金属分散液上での体積収縮が少なく、バンプが高さ方向により効率的に積み上がる。 (5) The solvent contained in the metal dispersion is preferably an organic solvent having a boiling point of 200 ° C. or higher. As a result, the drying of the organic solvent proceeds slowly, so that the deposited metal dispersion has less volume shrinkage on the previously deposited metal dispersion, and the bumps accumulate more efficiently in the height direction.

 この発明によれば、底面部の径が大きくならずに、バンプを形成する電極の小パッド化やバンプの狭ピッチ化に対して適応する形状のバンプを形成できる。そのため、特に電極パッドが小さく、狭ピッチのバンプを形成する必要がある小型の半導体チップを用いた電子部品装置の製造が容易になる、という効果を奏する。 According to the present invention, it is possible to form a bump having a shape suitable for a reduction in the size of the electrode for forming the bump and a reduction in the pitch of the bump without increasing the diameter of the bottom surface. For this reason, there is an effect that it is easy to manufacture an electronic component device using a small semiconductor chip in which electrode pads are particularly small and it is necessary to form bumps with a narrow pitch.

 また、金属分散液の液滴の基板電極上への濡れ広がりが大幅に抑制され、総インク供給量をほとんど変えずに、電極の小パッド化、狭ピッチ化への対応が可能となる。 In addition, wetting and spreading of the liquid droplets of the metal dispersion liquid on the substrate electrode is greatly suppressed, and it is possible to cope with a smaller electrode pad and a narrow pitch without changing the total ink supply amount.

従来技術によるバンプ形成方法とそれによるバンプの形状の例を示す図である。It is a figure which shows the example of the bump formation method by a prior art, and the shape of a bump by it. 第1の実施形態に係るバンプ形成方法の手順を示す図である。It is a figure which shows the procedure of the bump formation method which concerns on 1st Embodiment. 第1の実施形態に係るバンプ形成方法で形成したバンプと、従来技術によるバンプの形状を示す平面写真である。It is a plane photograph which shows the shape of the bump formed by the bump formation method concerning a 1st embodiment, and the bump by a prior art.

符号の説明Explanation of symbols

 1-基板
 2-電極
 10-液滴吐出ヘッド
 13-金属分散液滴
 14-バンプ
 14a-底面部
 14b-中央突出部
 15-バンプ
 31,32-銀ナノインク滴
 41-バンプ下層部
 51~55-バンプ上層部
1-substrate 2-electrode 10-droplet discharge head 13-metal dispersion droplet 14-bump 14a-bottom portion 14b-center protrusion 15-bump 31,32-silver nano ink droplet 41-bump lower layer portion 51-55-bump Upper echelon

 《第1の実施形態》
 図2は第1の実施形態に係るバンプ形成方法の手順を示す図である。図2では、切断面の一部の断面表記を省略している。基板1は、例えばセラミックス基板であり、その上面に金(Au)電極2が予め形成されている。バンプ形成のための金属分散液としては、銀(Ag)ナノ粒子を溶媒中に分散させた、約5~50mPa・sの低粘度の銀ナノインクを用いる。そして、液滴吐出ヘッド10を用いたインクジェット法によって電極2の上部に液滴を複数回吐出させて、銀ナノインク滴の着滴による層を積み上げていく。
<< First Embodiment >>
FIG. 2 is a diagram illustrating a procedure of the bump forming method according to the first embodiment. In FIG. 2, the cross-sectional notation of a part of the cut surface is omitted. The substrate 1 is, for example, a ceramic substrate, and a gold (Au) electrode 2 is previously formed on the upper surface thereof. As the metal dispersion for forming the bump, a silver nanoink having a low viscosity of about 5 to 50 mPa · s in which silver (Ag) nanoparticles are dispersed in a solvent is used. Then, droplets are ejected a plurality of times on the upper portion of the electrode 2 by an ink jet method using the droplet ejection head 10, and a layer formed by the landing of silver nano ink droplets is stacked.

 その際、基板の温度は、銀ナノインクが複数回吐出される時間で乾燥して、その乾燥した層が順次積み上がっていくように、例えば20~100℃の範囲に設定する。 At that time, the temperature of the substrate is set in a range of 20 to 100 ° C., for example, so that the silver nano-ink is dried for a plurality of times and the dried layers are sequentially stacked.

 上記銀ナノインクは、平均粒径1~100nmの銀微粒子の表面を、銀元素と配位可能なアミン,アルコール,チオールなどの分散剤で被覆し、有機溶媒中に安定に分散させたものである。この銀ナノインクは、インク状態で銀ナノ粒子が上記分散剤の被覆作用で有機溶媒中に凝集せず安定分散している。加熱時には、酸無水物などの捕捉物質が分散剤を取り込む。そして例えば250℃以下の低温で燒結させて、接合部を形成することにより導通する。
 なお、金属ナノ粒子としては銀以外に、金や銅を用いることもできる。
The silver nano ink is obtained by coating the surface of silver fine particles having an average particle diameter of 1 to 100 nm with a dispersing agent such as amine, alcohol, and thiol capable of coordinating with silver element, and stably dispersing in an organic solvent. . In this silver nano ink, silver nanoparticles are stably dispersed in the organic solvent without being aggregated in the organic solvent by the coating action of the dispersant. During heating, a scavenger such as an acid anhydride takes up the dispersant. And it conducts, for example, by sintering at a low temperature of 250 ° C. or lower to form a junction.
In addition, as a metal nanoparticle, gold | metal | money and copper can also be used besides silver.

 まず図2(A)に示すように、1回目(初期段階)に総供給量40plの複数の銀ナノインク滴を電極2の表面に吐出させる。これらの複数の銀ナノインク滴31の時間間隔は
1μs~1ms程度である。
First, as shown in FIG. 2A, a plurality of silver nanoink droplets with a total supply amount of 40 pl are ejected onto the surface of the electrode 2 for the first time (initial stage). The time interval between the plurality of silver nano ink droplets 31 is about 1 μs to 1 ms.

 これにより、図2(B)に示すように、電極2の表面に銀ナノインク滴31の着滴によるバンプ下層部41を形成する。基板1および電極2の温度は全工程を通じて50℃であり、数十秒でバンプ下層部41はインク内の溶媒が蒸発して粘度が高まり、乾燥する。 Thereby, as shown in FIG. 2B, a bump lower layer portion 41 is formed on the surface of the electrode 2 by the deposition of the silver nano ink droplet 31. The temperature of the substrate 1 and the electrode 2 is 50 ° C. throughout the entire process, and in a few tens of seconds, the solvent in the ink evaporates and the viscosity of the bump lower layer 41 is increased and dried.

 このバンプ下層部41の形成は、液滴吐出ヘッドのスキャニングまたは基板1のスキャニングによって各電極2上に対して順次行う。このスキャニングは2次元方向に行うが、例えば基板1をX軸方向、液滴吐出ヘッド10をY軸方向にスキャンするようにしてもよい。 The formation of the bump lower layer portion 41 is sequentially performed on each electrode 2 by scanning of a droplet discharge head or scanning of the substrate 1. This scanning is performed in a two-dimensional direction. For example, the substrate 1 may be scanned in the X-axis direction and the droplet discharge head 10 may be scanned in the Y-axis direction.

 上記銀ナノインク滴の着滴から所定の時間以上経過した後、図2(C)に示すように、2回目の吐出として、総供給量200plの銀ナノインク滴を吐出する。すなわち銀ナノインク滴32を、既に乾燥したバンプ下層部41の表面に着滴させる。これにより、図2(D)に示すようにバンプ下層部41の表面にバンプ上層部51を形成する。 After a predetermined time or more has elapsed since the deposition of the silver nano ink droplets, as shown in FIG. 2C, silver nano ink droplets having a total supply amount of 200 pl are ejected as the second ejection. That is, the silver nano ink droplets 32 are deposited on the surface of the bump lower layer portion 41 that has already been dried. Thereby, the bump upper layer portion 51 is formed on the surface of the bump lower layer portion 41 as shown in FIG.

 上記銀ナノインク滴には、その有機溶媒が沸点が200℃以上のものを用いることが望ましい。このことにより、有機溶媒の乾燥が緩やかに進むため、着滴した金属分散液はその前に着滴した金属分散液上での体積収縮が少なく、バンプが高さ方向により効率的に積み上がることになる。 It is desirable to use an organic solvent having a boiling point of 200 ° C. or higher for the silver nano ink droplets. As a result, the drying of the organic solvent proceeds slowly, so that the deposited metal dispersion has less volume shrinkage on the previously deposited metal dispersion, and the bumps accumulate more efficiently in the height direction. become.

 沸点が200℃以上の前記有機溶媒の例としては、ドデカン(沸点215℃)、トリデカン(沸点234℃)、テトラデカン(沸点254℃)、ペンタデカン(沸点271℃)などを用いることができる。 Examples of the organic solvent having a boiling point of 200 ° C. or higher include dodecane (boiling point 215 ° C.), tridecane (boiling point 234 ° C.), tetradecane (boiling point 254 ° C.), pentadecane (boiling point 271 ° C.), and the like.

 その後の3回目以降についても2回目と同様に所定の時間以上の間隔で総供給量200plの複数の銀ナノインク滴を電極2の表面に吐出させる。これにより図2(E)に示すようにバンプ上層部52~55を順次形成する。 In the subsequent third and subsequent times, similarly to the second time, a plurality of silver nano ink droplets with a total supply amount of 200 pl are ejected onto the surface of the electrode 2 at intervals of a predetermined time or more. As a result, bump upper layer portions 52 to 55 are sequentially formed as shown in FIG.

 上記1回目と2回目の吐出時間間隔およびそれ以降の吐出時間間隔は、銀ナノインクを複数回吐出した際に、その銀ナノインクが乾燥し、乾燥した層が積み重なるように、1ms~600sの範囲で設定する。各回の時間間隔は同一であることに限らず、異なるものであってもよい。 The first and second discharge time intervals and the subsequent discharge time intervals are in the range of 1 ms to 600 s so that the silver nanoink is dried and the dried layers are stacked when the silver nanoink is discharged a plurality of times. Set. The time interval of each time is not limited to being the same, and may be different.

 また、上記1回目と2回目以降の銀ナノインクの総供給量の比率は、1回目の吐出量によって異なり、1回目の総供給量が1~1000plの場合には、2回目以降の総供給量は1回目の1.1~10倍程度の範囲で設定する。この比率は2回目以降の銀ナノインクの濡れ広がりが1回目よりも小さくなるように定める。 In addition, the ratio of the total supply amount of the silver nano-ink from the first time to the second time depends on the discharge amount of the first time, and when the total supply amount of the first time is 1 to 1000 pl, the total supply amount of the second and subsequent times Is set in the range of about 1.1 to 10 times the first time. This ratio is determined so that the wetting and spreading of the silver nano-ink after the second time becomes smaller than the first time.

 2回目以降の銀ナノインク滴の吐出では、既に形成された銀ナノインクの乾燥膜上になされるが、銀ナノインクの乾燥膜は電極表面より平滑な状態であり、銀ナノインクの接触角は大きいため、銀ナノインクは1回目ほどには濡れ広がらず、上に積み重なることになる。そのため、供給量が1回目より多いにもかかわらず1回目ほどには濡れ広がらない。したがって図2(D)に示したように、バンプ下層部41上にバンプ上層部51が積み上がることになる。 In the second and subsequent discharges of silver nanoink droplets, it is made on the dry film of silver nanoink that has already been formed, but the dry film of silver nanoink is smoother than the electrode surface, and the contact angle of silver nanoink is large, Silver nano-ink does not spread as much as the first time, and will be stacked on top. Therefore, even though the supply amount is greater than the first time, it does not spread as much as the first time. Therefore, as shown in FIG. 2D, the bump upper layer portion 51 is stacked on the bump lower layer portion 41.

 また、上記吐出回が後になるほど銀ナノインクの乾燥膜表面の平滑性が増して濡れ広がりがさらに小さくなって、その分厚みが増す。したがって図2(E)に示すように1回の総供給量が同量であるにもかかわらず、バンプの断面形状は先細りの山型形状となる。 Also, the later the discharge times, the more smooth the dry film surface of the silver nano-ink and the less wetting and spreading, and the corresponding thickness increases. Therefore, as shown in FIG. 2 (E), the cross-sectional shape of the bump is a tapered mountain shape even though the total supply amount at one time is the same.

 その後、基板全体を250℃以下の所定温度まで加熱し、バンプを低温焼結させる。これにより図2(F)に示すように、銀粒子同士が焼結、接合するとともに、電極2にも接合した銀バンプを形成する。 Thereafter, the entire substrate is heated to a predetermined temperature of 250 ° C. or lower to sinter the bumps at a low temperature. As a result, as shown in FIG. 2 (F), silver particles are sintered and bonded together, and a silver bump bonded to the electrode 2 is formed.

 なお、上述の銀ナノインクの吐出は、一つの電極に対して必要回数の全てを行った後に、隣接する別の電極に対して、同様にして必要回数の全てを行うようにしてもよい。この方法によれば、銀ナノインクの着滴により形成される各層の積み重ねずれが少なくなることと、液滴吐出ヘッドまたは基板の移動回数が減る、という利点がある。また、先に示した全ての電極に対して吐出毎に順次スキャニングを行う方法によれば、既に着滴した銀ナノインクの層がスキャニングおよび他の電極への吐出中に乾燥が進むので、銀ナノインクの乾燥に要する時間が稼げる、という利点がある。 It should be noted that the above-described ejection of the silver nano ink may be performed for all the necessary times in the same manner for another adjacent electrode after performing the necessary number of times for one electrode. According to this method, there are advantages that the stacking deviation of each layer formed by the deposition of silver nano ink is reduced and the number of times the droplet discharge head or the substrate is moved is reduced. In addition, according to the method of performing scanning sequentially for every electrode as described above, since the layer of silver nanoink that has already landed progresses during scanning and ejection to another electrode, the silver nanoink There is an advantage that the time required for drying can be earned.

 図3は、第1の実施形態で示したバンプ形成方法で形成したバンプと、従来技術によるバンプの形状を示す平面写真である。
 図3(A)は、1回目に40pl、2回目~6回目にそれぞれ200plの銀ナノインク滴を吐出させた第1の実施形態によるバンプであり、電極2の表面にバンプ下層部41が200~250μmだけ広がった様子が分かる。またこのバンプ下層部41の上部に2回目以降の銀ナノインクの着滴によるバンプ上層部が積み重なり、その最上層部55が表れているのが分かる。
FIG. 3 is a plane photograph showing the shape of bumps formed by the bump forming method shown in the first embodiment and bumps according to the prior art.
FIG. 3A shows bumps according to the first embodiment in which 200 pl of silver nano-ink droplets are ejected 40 pl at the first time, and 200 pl each time from the second time to the sixth time, and the bump lower layer portion 41 is 200 to 200 on the surface of the electrode 2. It can be seen that it has spread by 250 μm. Further, it can be seen that the upper layer portion 55 of the bump is deposited on the upper portion of the lower layer portion 41 of the bump, and the upper layer portion 55 of the silver nano-ink is deposited for the second and subsequent times.

 図3(B)は1回目から6回目まで全て200plの銀ナノインク滴を吐出させた例であり、1回目の銀ナノインクの着滴によるバンプの底面部14aが500μm以上広がっていることが分かる。そのためこの例ではバンプを形成する電極のパッド幅を500μm以下にすることができない。これに対し図3(A)に示した例では、バンプを形成する電極のパッド幅を約300μm程度にまで小型化でき、それに伴ってバンプを狭ピッチ化できる。 FIG. 3B shows an example in which 200 pl of silver nano ink droplets are ejected from the first to the sixth time, and it can be seen that the bottom surface portion 14a of the bump due to the first deposition of the silver nano ink spreads by 500 μm or more. Therefore, in this example, the pad width of the electrode for forming the bump cannot be made 500 μm or less. On the other hand, in the example shown in FIG. 3A, the pad width of the electrode for forming the bump can be reduced to about 300 μm, and the bump can be narrowed accordingly.

 以上のようにして銀バンプを形成した後、このバンプを介して所定のチップ状態または基板状態の部品をボンディングする。その後、基板1を分断して個別の電子部品を得る。あるいは、銀バンプの形成後(すなわち加熱前に)、所定のチップ状態または基板状態の部品をボンディングした後に、基板全体を250℃以下の所定温度まで加熱し、銀バンプを焼結させて接合部を形成してもよい。 After forming silver bumps as described above, parts in a predetermined chip state or substrate state are bonded through the bumps. Thereafter, the substrate 1 is divided to obtain individual electronic components. Alternatively, after the formation of silver bumps (ie, before heating), after bonding parts in a predetermined chip state or substrate state, the entire substrate is heated to a predetermined temperature of 250 ° C. or less, and the silver bumps are sintered to form a bonded portion. May be formed.

 以上に示した例では、セラミック基板上に形成した金電極に対して銀バンプを形成するものであったが、銀バンプの形成対象が、シリコンウェハなどの半導体基板、樹脂基板、リードフレーム、フィルムテープ、半導体チップであっても同様に適用できる。また、銀バンプを形成する電極として金以外に銀や銅を用いた場合にも同様に適用できる。 In the example shown above, silver bumps were formed on the gold electrode formed on the ceramic substrate. However, the silver bumps were formed on a semiconductor substrate such as a silicon wafer, a resin substrate, a lead frame, and a film. The same applies to tapes and semiconductor chips. Further, the present invention can be similarly applied when silver or copper is used in addition to gold as an electrode for forming a silver bump.

 《第2の実施形態》
 第1の実施形態では基板および電極の温度を一定にしたが、第2の実施形態では、1回目の銀ナノインクの液滴吐出時の基板温度を例えば70℃と高く設定し、2回目以降の吐出時の基板温度は50℃とする。
<< Second Embodiment >>
In the first embodiment, the temperature of the substrate and the electrode is constant, but in the second embodiment, the substrate temperature at the time of discharging the first silver nanoink droplet is set to a high value of, for example, 70 ° C. The substrate temperature during discharge is 50 ° C.

 各吐出回での供給量は200plで一定とする。 Suppose that the supply amount at each discharge is constant at 200 pl.

 このことにより、第1の実施形態で図3に示したように、底面部(裾野部分)の広がりが抑えられたバンプが形成できる。 As a result, as shown in FIG. 3 in the first embodiment, it is possible to form a bump in which the spread of the bottom portion (bottom portion) is suppressed.

 《第3の実施形態》
 第3の実施形態では、第1の実施形態で示した吐出量の制御と第2の実施形態で示した基板温度の制御とを組み合わせる。例えば1回目の吐出量を100plとし、基板温度を60℃とし、2回目以降の吐出量は200pl、基板温度は50℃とする。
<< Third Embodiment >>
In the third embodiment, the discharge amount control shown in the first embodiment is combined with the substrate temperature control shown in the second embodiment. For example, the first discharge amount is 100 pl, the substrate temperature is 60 ° C., the second and subsequent discharge amounts are 200 pl, and the substrate temperature is 50 ° C.

 これにより、バンプ下層部の有機溶媒の蒸発による乾燥時間が短縮化でき、必要な高さのバンプの形成に要する時間を短縮化できる。 Thereby, the drying time by evaporation of the organic solvent in the lower layer of the bump can be shortened, and the time required for forming the bump having the required height can be shortened.

 なお、以上に示した例では、バンプの材料として銀ナノインクを用いたが、そのような金属分散液以外にも、抵抗ペーストまたはフォトレジストのような非金属分散液または樹脂分散液を用いてもよい。また、バンプ以外にも電極配線などを狭ピッチで形成する場合にも同様に適用できる。 In the example shown above, silver nano ink is used as the bump material. However, in addition to such a metal dispersion, a non-metal dispersion or a resin dispersion such as a resistance paste or a photoresist may be used. Good. In addition to the bumps, the present invention can be similarly applied to the case where electrode wirings are formed at a narrow pitch.

Claims (5)

 基板に形成された電極上に金属分散液の液滴を吐出して、当該金属分散液中に分散されている金属によるバンプを形成する方法であって、
 前記金属分散液の液滴を、初期段階とそれ以降の段階とに分けて吐出することとし、初期段階での吐出量をその後の段階での吐出量より少量とすることを特徴とするバンプ形成方法。
A method of discharging a droplet of a metal dispersion liquid onto an electrode formed on a substrate to form a bump made of metal dispersed in the metal dispersion liquid,
Bump formation characterized in that droplets of the metal dispersion liquid are ejected separately in an initial stage and subsequent stages, and the ejection amount in the initial stage is smaller than the ejection amount in the subsequent stage Method.
 基板に形成された電極上に金属分散液の液滴を吐出して、当該金属分散液中に分散されている金属によるバンプを形成する方法であって、
 前記金属分散液の液滴を、初期段階とそれ以降の段階とに分けて吐出することとし、初期段階での基板の温度をその後の段階での基板の温度より高温とすることを特徴とするバンプ形成方法。
A method of discharging a droplet of a metal dispersion liquid onto an electrode formed on a substrate to form a bump made of metal dispersed in the metal dispersion liquid,
The metal dispersion liquid droplets are ejected separately in an initial stage and subsequent stages, and the temperature of the substrate in the initial stage is set higher than the temperature of the substrate in the subsequent stage. Bump formation method.
 基板に形成された電極上に金属分散液の液滴を吐出して、当該金属分散液中に分散されている金属によるバンプを形成する方法であって、
 前記金属分散液の液滴を、初期段階とそれ以降の段階とに分けて吐出することとし、初期段階での基板の温度をその後の段階での基板の温度より高温とするとともに、初期段階での吐出量をその後の段階での吐出量より少量とすることを特徴とするバンプ形成方法。
A method of discharging a droplet of a metal dispersion liquid onto an electrode formed on a substrate to form a bump made of metal dispersed in the metal dispersion liquid,
The droplets of the metal dispersion liquid are ejected separately in an initial stage and subsequent stages, and the temperature of the substrate in the initial stage is set higher than the temperature of the substrate in the subsequent stage. The bump forming method is characterized in that the discharge amount is made smaller than the discharge amount in the subsequent stage.
 前記初期段階およびその後の段階での前記金属分散液の液滴の吐出は、それぞれ複数の液滴を順次吐出するものであり、当該吐出の回数によって初期段階での吐出量とその後の段階での吐出量とをそれぞれ定める請求項1または3に記載のバンプ形成方法。 The discharge of the liquid droplets of the metal dispersion liquid in the initial stage and the subsequent stage is to sequentially discharge a plurality of liquid droplets. The discharge amount in the initial stage and the subsequent stage are determined depending on the number of discharges. 4. The bump forming method according to claim 1, wherein a discharge amount is determined.  前記金属分散液に含まれる溶媒は、沸点が200℃以上の有機溶媒である、請求項1~4のいずれかに記載のバンプ形成方法。 5. The bump forming method according to claim 1, wherein the solvent contained in the metal dispersion is an organic solvent having a boiling point of 200 ° C. or higher.
PCT/JP2009/053831 2008-03-05 2009-03-02 Method for forming bump Ceased WO2009110414A1 (en)

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WO2017062094A1 (en) * 2015-10-09 2017-04-13 Raytheon Company Electronic module with free-formed self-supported vertical interconnects
JP2020136280A (en) * 2019-02-12 2020-08-31 株式会社村田製作所 Electronic component manufacturing method

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JP2004228375A (en) * 2003-01-23 2004-08-12 Seiko Epson Corp Bump formation method, device, and electronic apparatus
JP2006156943A (en) * 2004-09-28 2006-06-15 Seiko Epson Corp Wiring pattern forming method, wiring pattern, and electronic device

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JP2004228375A (en) * 2003-01-23 2004-08-12 Seiko Epson Corp Bump formation method, device, and electronic apparatus
JP2006156943A (en) * 2004-09-28 2006-06-15 Seiko Epson Corp Wiring pattern forming method, wiring pattern, and electronic device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017062094A1 (en) * 2015-10-09 2017-04-13 Raytheon Company Electronic module with free-formed self-supported vertical interconnects
JP2018534771A (en) * 2015-10-09 2018-11-22 レイセオン カンパニー Electronic module with free-form free-standing vertical interconnect
JP2020136280A (en) * 2019-02-12 2020-08-31 株式会社村田製作所 Electronic component manufacturing method

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