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Unit 2 Revision

This document provides 17 problems related to analyzing transistor circuits and calculating various transistor parameters such as current gain (β), forward current gain (α), leakage currents (ICO, ICBO), and other circuit values based on information provided such as input currents, voltages, and transistor specifications. The problems cover common configurations including common emitter, common base, and common collector and require calculating currents, gains, and other parameters.

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222 views1 page

Unit 2 Revision

This document provides 17 problems related to analyzing transistor circuits and calculating various transistor parameters such as current gain (β), forward current gain (α), leakage currents (ICO, ICBO), and other circuit values based on information provided such as input currents, voltages, and transistor specifications. The problems cover common configurations including common emitter, common base, and common collector and require calculating currents, gains, and other parameters.

Uploaded by

devi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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1. A BJT has IB=10µA, β=99 and ICO=1µA. Determine the collector current.

2. The common-base D.C current gain of a transistor is 0.99. If the base current is 20µA, what is the value of
collector and emitter current?
3. The CB dc current gain of the transistor is 0.967. if the emitter current is 10mA. What is the value of base
current?
4. If αDC=0.99 and ICBO=50 µA, find emitter current and collector current.
5. For a transistor circuit having α = 0.98, ICBO=ICO= 5µA and IB=100 µA, find IC and IE.
6. A transistor has β=150. Find the collector and base currents, if IE= 10mA.
7. For a transistor in common emitter configuration, the reverse leakage current is 21µA, whereas when the
same transistor is connected in common base configuration, it reduces to 1.1µA. Calculate values of αdc
and βdc of the transistor.
8. When IE of a transistor is changed by 1mA, its IC changes by 0.995mA. Find its common base current gain α
and common-emitter current gain β.
9. Determine the base, collector and emitter currents and VCE for a CE circuit as shown, for VCC=10V,
VBB=4V, RB=200kΩ, RC=2kΩ, VBE(on)= 0.7V, β=200.

10. A transistor has β=100. If the collector current is 40mA, find the value of emitter and base current.
11. Given an NPN transistor for which α=0.98, ICO =2µA and ICEO=16 µA. A common emitter connection is
used as shown in fig., with VCC =12V and RC=4kΩ. What is the minimum base current required in order
that transistor enter into saturation region.

12. Calculate the αdc and βdc for the given transmission for which IC=5 mA, IB=50µA and ICO=1µA.
13. The h-parameter for the transistor are hie=1.1kΩ, hfe=99, hre=2.5 x 10-4 and hce=25 µA/V. Find the h-
parameter for common base and common collector configurations.
14. Determine the VCE(sat) of a bipolar transistor, if IC=1mA,αF=0.99,αR=0.20 and IB=50µA. Assume T=300K.

15. A transistor with IB = 100 µA and IC = 2mA. Find β of the transistor, α of the transistor and IE, if IB changes
by 25 µA and IC changes by 0.6mA. Find the new value of β. A
16. In the common collector configuration, the transistor parameters are hic=1.2K, hfc=-101, hrc=1 and
hoc=25µA/V. Calculate the Ri, Ai=IL/IS, Av, Avs=V0/Vs, R0 for the circuit.

17. The reverse leakage current of the transistor when connected in CB configuration is 0.25mA and it is 8µA
when same transistor is connected in CE configuration. Calculate αdc and βdc of the transistor. (Assume
IB=30mA)

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