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Practise Sheet 7 UNIT 2

This document is a practice sheet for the Fundamentals of Electronics Engineering course, focusing on various calculations related to transistors and JFETs. It includes problems on current gains, base currents, and other parameters for both npn transistors and JFETs. The sheet is aimed at first-year B.Tech students in their second semester for the academic session 2024-25.

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2024.cs1g.ayushkapal2412720
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21 views1 page

Practise Sheet 7 UNIT 2

This document is a practice sheet for the Fundamentals of Electronics Engineering course, focusing on various calculations related to transistors and JFETs. It includes problems on current gains, base currents, and other parameters for both npn transistors and JFETs. The sheet is aimed at first-year B.Tech students in their second semester for the academic session 2024-25.

Uploaded by

2024.cs1g.ayushkapal2412720
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Fundamentals of Electronics Engineering (BEC-201)

Practice Sheet – 7 (Unit- 2)


B. Tech. – 1st Year Semester- II Session: 2024-25.

1. In CB Configuration the value of α is 0.98. A voltage drop of 4.9 V is obtained across a resistor of 5
KΩ, when connected in collector circuit. Find the base current.

2. The collector and base currents of an npn transistor are measured as IC = 5 mA, IB = 50 µA and ICBO
= 1 µA. Calculate α, β and IE. Also calculate the new level of IB required to produce IC = 10 mA.

3. In an npn transistor α = 0.98, IE = 10 mA, leakage current ICBO = 1 µA. Calculate IC, IB , β and ICEO .

4. The value of β for a transistor is 100. If the value of emitter current is 10 mA, then determine the
values of collector and base current.

5. Find the value of base current if the common base DC current gain of a transistor is 0.987, and
emitter current is 10 mA.

6. The reverse saturation current of an npn transistor in common base circuit is 12.5 µA. for an emitter
current of 2 mA, collector current is 1.97 mA. Determine the current gain and base current.

7. A transistor is connected in common emitter configuration as an amplifier. The parameters of the


transistor specified are,
IB = 25 µA, ICBO = 100 nA, β =100.
Find its IC, IE, ICEO and α, where symbols have their usual meaning.

8. IE = 5 mA, IC = 4.95 mA, ICEO = 200 µA. Calculate βdc and leakage current ICBO .

9. The pinchoff voltage of a p-channel JFET is VP = 5V, and the drain source saturation current IDSS =
40 mA. The value of drain source voltage VDS is such that it is operated in saturation region. The
drain current is given by ID = 15 mA. Determine VGS.

10. For n channel JFET, IDSS = 20 mA, VP = - 8V, gm0 = 5000 µS. Determine the drain current and trans
conductance at VGS = - 4V.

11. For an n-channel JFET IDSS = 8.7 mA, VP = -3V and VGS = - 1V. Find the value of ID, gm0 & gm.

12. A JFET has VP = - 4.5 V, IDSS = 10 mA and ID = 2.5 mA. Determine the trans-conductance.

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

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