Design CMOS inverter in Cadence Virtuoso and to study it’s dc and
transient analysis.
                                                       Rishabh Soni (T19125)
                                                CMOS Digital IC Design Practicum
                                                 Date Performed: August 21,2019
                                                  Instructor: Dr. Rahul Shrestha
                        I. O BJECTIVE                             voltage.The VTC indicates that for low input voltage,the
  •   To design the schematic and symbol of the CMOS              circuit output is high and for high input ,the output goes
      inverter in Cadence Virtuoso.                               towards zero volts.
  •   To plot the voltage transfer characteristics of CMOS
      inverter by DC analysis.                                    B. Power dissipation
  •   TO observe the change in switching threshold in VTC by
      varying the width of P or N type mos.                          The CMOS inverter dissipates the negligible power during
  •   To plot the waveform of input voltage, output voltage,      the steady state operation ,power dissipation only occurs
      power dissipated and energy for CMOS inverter.              during the charging and discharging of the load capacitance
  •   To calculate the average and peak power dissipation of      through the PMOS and NMOS respectively .there are the
      above mentioned.                                            following classification of the power dissipation in the CMOS
                                                                  inverter i.e. dynamic power dissipation,static power dissipation
                          II. T HEORY                             and direct path power dissipation or we can call it as short
   The inverter is the most basic logic and the Fig.1 shows the   circuit power dissipation.the dynamic power dissipation is
symbol,truth table,and the structure of a CMOS inverter.As        the dominating among the above three and the static power
shown the structure consists of a combination of a PMOS           dissipation is very less or negligible.
transistor at the top and a NMOS transistor at the bottom.
   CMOS is also called as complementary-symmetry metal                             III. S IMULATION RESULTS
oxide semiconductor.The word complementary symmetry re-
fer to the fact that during designing of CMOS we uses
complementary and symmetrical pair of P-type and N-type
MOSFET’s.
                             dia.jpg
                                                                                  Fig. 2. Schematic of CMOS inverter
              Fig. 1. Block diagram of CMOS inverter
A. Voltage Transfer Characteristics
  The quality of the CMOS inverter is measured using the                                   Fig. 3. Symbol
voltage transfer curve,it is a plot of input voltage Vs output
       Fig. 4. Testbentch of CMOS inverter                   Fig. 8. Waveforms(Input,Output,Power,Energy)
                      1.jpg
                                                          Fig. 9. Waveforms showing glitches during transition
    Fig. 5. VTC curve of inverter for equal w/l
                      2.jpg
                                                              Fig. 10. waveforms for delay measurement
Fig. 6. VTC curve of CMOS with (W/L)p=2.5(W/L)n
                                                                        IV. C ONCLUSION
                                                  •   The CMOS inverter has been studied by the schematic
                                                      and symbol designed in Cadence Virtuoso.
                                                  •   When the ratio of the width over length of PMOS
                                                      is equal to the ratio of NMOS, the switching thresh-
                                                      old voltage(Vm) of inverter is 529.9mV and when
                                                      (W/L)p=2.5(W/L)n ,the switching threshold voltage of
                                                      inverter is 596.14mV which is approximately equal to
                                                      the half of the supply voltage (1.2V) and we got the
                                                      symmetrical VTC for CMOS inverter and this condition
                                                      is also stands for equal rise time and fall time situation.
                                                  •   The average and peak power dissipation obtained as a
   Fig. 7. VTC curve with variable PMOS width
                                                      result simulation are 213.5nW and 2.031mW respectively.
                                                  •   A delay of 3.6ps is observed.
                           R EFERENCES
[1] Behzad razavi, Design of analog CMOS integrated circuits,indian edi-
    tion, 2002
[2] Jan M Rabaey, Anantha P Chandrakasan, Borivoje Nikolic, Digital
    integrated circuits:A design perspective-Pearson, 2003