Philips Semiconductors Product Specification

Insulated Gate Bipolar Transistor (IGBT) BUK854-800A

GENERAL DESCRIPTION QUICK REFERENCE DATA

Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT
gate bipolar power transistor in a
plastic envelope. VCE Collector-emitter voltage 800 V
The device is intended for use in IC Collector current (DC) 12 A
motor control, DC/DC and AC/DC Ptot Total power dissipation 85 W
converters, and in general purpose VCEsat Collector-emitter on-state voltage 3.5 V
high frequency switching Eoff Turn-off Energy Loss 0.5 mJ
applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c
tab

1 gate
2 collector
3 emitter g

tab collector
1 23 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCE Collector-emitter voltage - -5 800 V
VCGR Collector-gate voltage RGE = 20 kΩ - 800 V
±VGE Gate-emitter voltage - - 30 V
IC Collector current (DC) Tmb = 25 ˚C - 12 A
IC Collector current (DC) Tmb = 100 ˚C - 6 A
ICLM Collector Current (Clamped Tj ≤ Tjmax. - 20 A
Inductive Load) VCL ≤ 500 V
ICM Collector current (pulsed peak value, Tj ≤ Tjmax. - 30 A
on-state)
Ptot Total power dissipation Tmb = 25 ˚C - 85 W
Tstg Storage temperature - - 55 150 ˚C
Tj Junction Temperature - - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Junction to mounting base - - 1.47 K/W
Rth j-a Junction to ambient In free air 60 - K/W

October 1994 1 Rev.1.100

Philips Semiconductors Product Specification

Insulated Gate Bipolar Transistor (IGBT) BUK854-800A

STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CES Collector-emitter breakdown VGE = 0 V; IC = 0.25 mA 800 - - V
voltage
VGE(TO) Gate threshold voltage VCE = VGE; IC = 1 mA 3 4 5.5 V
ICES Zero gate voltage collector VCE = 800 V; VGE = 0 V; Tj = 25 ˚C - 10 100 µA
current
ICES Zero gate voltage collector VCE = 800 V; VGE = 0 V; Tj =125 ˚C - 0.1 1 mA
current
IECS Reverse collector current VCE = -5 V; VGE = 0 V - 0.1 5 mA
IGES Gate emitter leakage current VGE = ±30 V; VCE = 0 V - 10 100 nA
VCEsat Collector-emitter saturation VGE = 15 V; IC = 6 A - 2.4 3.5 V
voltage VGE = 15 V; IC = 12 A - 3.1 - V

DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfe Forward transconductance VCE = 15 V; IC = 3 A 1.5 4 - S
Cies Input capacitance VGE = 0 V; VCE = 25 V; f = 1 MHz - 400 750 pF
Coes Output capacitance - 45 80 pF
Cres Feedback capacitance - 15 40 pF
td on Turn-on delay time IC = 6 A; VCC = 500 V; - 20 - ns
tr Turn-on rise time VGE = 15 V; RG = 25Ω; - 30 - ns
Eon Turn-on Energy Loss Tj = 25˚C; - 0.25 - mJ
td off Turn-off delay time Inductive Load - 170 270 ns
tf Turn-off fall time Energy Losses include all ’tail’ - 200 400 ns
Eoff Turn-off Energy Loss losses - 0.25 0.5 mJ
td on Turn-on delay time IC = 6 A; VCC = 500 V; - 20 - ns
tr Turn-on rise time VGE = 15 V; RG = 25Ω; - 30 - ns
Eon Turn-on Energy Loss Tj = 125˚C; - 0.25 - mJ
td off Turn-off delay time Inductive Load - 200 350 ns
tf Turn-off fall time Energy Losses include all ’tail’ - 400 800 ns
Eoff Turn-off Energy Loss losses - 0.5 1 mJ

October 1994 2 Rev.1.100