PD - 9.
690A
IRGBC40S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Switching-loss rating includes all "tail" losses Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve
G E C
Standard Speed IGBT
VCES = 600V VCE(sat) 1.8V
@VGE = 15V, I C = 31A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 50 31 240 100 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm)
Units
V A
V mJ W
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
0.50 2.0 (0.07)
Max.
0.77 80
Units
C/W g (oz)
Revision 0
C-15
IRGBC40S
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES IGES
Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 V VGE = 0V, I C = 250A 20 V VGE = 0V, IC = 1.0A 0.75 V/C VGE = 0V, I C = 1.0mA 1.6 1.8 IC = 31A V GE = 15V 2.2 V IC = 60A See Fig. 2, 5 1.7 IC = 31A, T J = 150C 3.0 5.5 VCE = VGE, IC = 250A -9.3 mV/C VCE = VGE, IC = 250A 12 21 S VCE = 100V, I C = 31A 250 A VGE = 0V, V CE = 600V 1000 VGE = 0V, V CE = 600V, T J = 150C 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 62 90 IC = 31A 10 15 nC VCC = 400V See Fig. 8 27 40 VGE = 15V 28 TJ = 25C 50 ns IC = 31A, V CC = 480V 1100 1500 VGE = 15V, R G = 10 620 1100 Energy losses include "tail" 1.0 12 mJ See Fig. 9, 10, 11, 14 13 20 29 TJ = 150C, 53 ns IC = 31A, V CC = 480V 1600 VGE = 15V, R G = 10 1200 Energy losses include "tail" 22 mJ See Fig. 10, 14 7.5 nH Measured 5mm from package 1600 VGE = 0V 140 pF VCC = 30V See Fig. 7 20 = 1.0MHz
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 10, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
C-16
IRGBC40S
60
Fo r bo th:
Tria ngu lar w av e:
LO A D C U R R E N T (A )
40
S qu are w ave : 60% of rated voltage
D uty c yc le: 50% T J = 125 C T s in k = 90C G ate d riv e as s pec ified P o w e r D issip a tion = 2 8 W
C lam p voltage: 80% of ra ted
20
Ideal diodes
0 0.1 1 10 100
f, F re quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
1000
1000
I C , Collector-to-E m itter C urrent (A)
IC , C ollector-to-E mitter C urrent (A )
TJ = 25 C TJ = 1 50 C
100
TJ = 25 C
100
TJ = 15 0C
10
10
1 0.1 1
V G E = 15 V 20 s P UL S E W ID TH
10
1 5 10
V C C = 1 00 V 5 s P UL S E W IDTH
15 20
V C E , C o llector-to-Em itter V oltage (V)
V G E , G ate -to-E m itter V olta ge (V )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-17
IRGBC40S
70
V G E = 15 V
3.0
M a xim u m D C C o llec to r C urren t (A )
60
V CE , Collector-to-E m itter V oltage (V)
LIMITED BY PACKAGE
VG E = 1 5 V 80 s P UL S E W ID TH I C = 62 A
2.5
50
40
2.0
30
I C = 31 A
20
1.5
10
I C = 1 6A
0 25 50 75 100 1 25 150
1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160
T C , C as e T em pe ra ture (C )
TC , C ase Tem perature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
T herm al Response (Z th JC )
D = 0 .5 0
0.2 0
0.1
0.1 0 0 .05 SIN G LE P UL SE (TH ER MA L R E SP O NS E )
N o te s: 1 . D u ty fa c to r D = t 1 / t 2
PD M
1 t2
0.0 2 0.0 1
0.01 0.00001
2 . P e a k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
10
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-18
IRGBC40S
3 0 00
V G E , G ate-to-E mitter V oltage (V )
10 0
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
V C E = 40 0 V I C = 3 1A
16
Cies
C , C a pac ita nc e (pF )
2 0 00
12
Coes
1 0 00
Cres
0 1 10
0 0 10 20 30 40 50 60
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
Q g , Total G ate C harge (nC )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1 4 .6
1 4 .2
To ta l S w itc hing Lo sse s (m J)
To ta l S w itch in g Losses (m J)
1 4 .4
VC C VG E TC IC
= 4 80 V = 15 V = 25 C = 3 1A
100
R G = 10 V GE = 15 V V CC = 4 80 V
I C = 62 A I C = 31A I C = 1 6A
1 4 .0
10
1 3 .8
1 3 .6
1 3 .4
1 3 .2 0 10 20 30 40 50 60
1 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G , G ate R es istance ( )
W
TC , C ase Tem perature (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-19
IRGBC40S
50
40
I C , C o lle c to r-to -E m itte r C u rre n t (A )
T o ta l S w itc hin g L o s s e s (m J )
RG TC VCC VGE
= 10 = 1 50C = 48 0V = 1 5V
1000
VG E E 20 V G= T J = 125 C
100
30
S A FE O P E R A TING A R E A
20
10
10
0 0 10 20 30 40 50 60 70
1 1 10 100 1000
I C , C o lle c to r-to -E m itte r C u rre n t (A )
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12
C-20
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