PD - 91456E

IRG4BC40U
UltraFast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

UltraFast: optimized for high operating

frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package

VCES = 600V
VCE(on) typ. = 1.72V

@VGE = 15V, IC = 20A

n-channel

Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs

TO-220AB

Absolute Maximum Ratings

Parameter
VCES
IC @ TC = 25C
IC @ TC = 100C
ICM
ILM
VGE
EARV
PD @ TC = 25C
PD @ TC = 100C
TJ
TSTG

Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.

Max.

Units

600
40
20
160
160
20
15
160
65
-55 to +150

V
A

V
mJ
W

C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA
Wt

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Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight

Min.

Typ.

Max.

---------------------

-----0.50
-----2 (0.07)

0.77
-----80
------

Units
C/W
g (oz)

1
4/17/2000

IRG4BC40U
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage

Min.
600
18
------------VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe
Forward Transconductance U
11
---ICES
Zero Gate Voltage Collector Current
------IGES
Gate-to-Emitter Leakage Current
---V(BR)CES
V(BR)ECS

Typ.
------0.63
1.72
2.15
1.7
----13
18
-------------

Max. Units
Conditions
---V
VGE = 0V, IC = 250A
---V
VGE = 0V, IC = 1.0A
See Fig. 2, 5
---- V/C VGE = 0V, IC = 1.0mA
2.1
IC = 20A
VGE = 15V
---V
IC = 40A
---IC = 20A, TJ = 150C
6.0
VCE = VGE, IC = 250A
---- mV/C VCE = VGE, IC = 250A
---S
VCE = 100V, IC = 20A
250
VGE = 0V, VCE = 600V
2.0
A
VGE = 0V, VCE = 10V, TJ = 25C
2500
VGE = 0V, VCE = 600V, TJ = 150C
100 nA
VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres

Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Min.
----------------------------------------------------------

Typ.
100
16
40
34
19
110
120
0.32
0.35
0.67
30
19
220
160
1.4
7.5
2100
140
34

Max. Units
Conditions
150
IC = 20A
25
nC
VCC = 400V
See Fig. 8
60
VGE = 15V
---TJ = 25C
---ns
IC = 20A, VCC = 480V
175
VGE = 15V, RG = 10
180
Energy losses include "tail"
------mJ See Fig. 10, 11, 13, 14
1.0
---TJ = 150C,
---ns
IC = 20A, VCC = 480V
---VGE = 15V, RG = 10
---Energy losses include "tail"
---mJ See Fig. 13, 14
---nH Measured 5mm from package
---VGE = 0V
---pF
VCC = 30V
See Fig. 7
--- = 1.0MHz

Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10,

T Pulse width 80s; duty factor 0.1%.

U Pulse width 5.0s, single shot.

(see fig. 13a)

S Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4BC40U
60
F o r b o th :

T ria n g u la r w a ve :

D uty c yc le: 50%

T J = 125C
T s ink = 90C
G ate driv e as spec ified

50

C la m p vo l ta g e :
8 0 % o f ra te d

Load Current ( A )

P o w e r D is s ip a tio n = 2 8 W
40
S q u a re wave :
30

6 0 % o f ra te d
vo l ta g e

20

10

Id e a l d io de s

0
0.1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000

100

I C , C o lle cto r-to -E m itte r C u rre n t (A )

IC , Collector-to-Emitter Current (A)

1000

TJ = 25C
T J = 150C

10

V G E = 15V
20s PULSE WIDTH A

1
0.1

10

100

TJ = 1 5 0 C

T J = 2 5 C
10

VCC = 10V
5 s P U L S E W ID T H A

1
4

10

VC E , Collector-to-Emitter Voltage (V)

VG E , G a te -to -E m itte r V o lta g e (V )

Fig. 2 - Typical Output Characteristics

TC = 25C

Fig. 3 - Typical Transfer Characteristics

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12

IRG4BC40U
2.5

V G E = 15V

V C E , Collector-to-Emitter Voltage (V)

Maximum DC Collector Current (A)

40

30

20

10

0
25

50

75

100

125

V G E = 15V
80s PULSE WIDTH
I C = 40A

2.0

I C = 20A

1.5

I C = 10A

1.0

150

-60

TC , Case Temperature (C)

-40

-20

20

40

60

80

100 120

140 160

T J , Junction Temperature (C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

Therm al Response (Z th JC )

D = 0 .5 0

0.2 0

0 .1
0.1 0

PD M

0 .05

0.0 2

t
SIN G LE P UL SE
(T H ER M A L R E SP O NS E )

t2
N o te s:
1 . D u ty fa c to r D = t

0.0 1

0 .0 1
0 .0 0 0 0 1

/ t2

2 . P e a k TJ = P D M x Z th J C + T C

0 .0 0 0 1

0 .0 0 1

0 .0 1

0 .1

10

t 1 , R ectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC40U
20

V GE =
C ie s =
C re s =
C oes =

0V,
f = 1M H z
C ge + C gc , Cc e S H O R T E D
C gc
C ce + C gc

V G E , G a te-to -Em itter V oltage (V )

C , C a pac itan ce (pF )

4000

C ie s

3000

2000

C o es

C re s

1000

10

16

12

VCE = 400V
I C = 20A

100

20

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

Total Switching Losses (mJ)

1.0

10

= 480V
= 15V
= 25C
= 20A

0.9

0.8

0.7

0.6
0

10

20

30

40

50

60

R G , Gate Resistance ( )

Fig. 9 - Typical Switching Losses vs. Gate

Resistance
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80

100

120

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Total Switching Losses (mJ)

VC C
VG E
TJ
IC

60

Q g , To ta l G a te C h a rg e (n C )

V C E , C ollector-to-Em itter V olta ge (V)

1.1

40

R G = 10
V G E = 15V
V C C = 480V
I C = 40A

I C = 20A
1

I C = 10A

0.1
-60

-40

-20

20

40

60

80

100

120 140

160

TJ , Junction Temperature (C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature
5

IRG4BC40U
RG
TJ
V CC
V GE

=
=
=
=

1000

10
150C
480V
15V

I C , C ollector-to-E m itter Current (A )

Total Switching Losses (mJ)

4.0

3.0

2.0

1.0

0.0
0

10

20

30

40

I C , Collector-to-Emitter Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

50

VGGE E= 2 0V
T J = 125 C

100

S A FE O P E R A TIN G A R E A

10

1
1

10

100

1000

V C E , Collecto r-to-E m itter V oltage (V )

Fig. 12 - Turn-Off SOA

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IRG4BC40U

D .U .T.
RL =

VC *

50V

480V
4 X IC@25C

0 - 480V

1 00 0V

480F
960V

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )

* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive

Fig. 13b - Pulsed Collector

Load Test Circuit

Current Test Circuit

IC
L
D river*

D .U .T.
VC

Fig. 14a - Switching Loss

Test Circuit

50V
1000V
Q

* Driver same type

as D.U.T., VC = 480V

9 0%
1 0%

VC

90 %

Fig. 14b - Switching Loss

t d (o ff)

10 %
IC 5%

Waveforms

tf

tr
t d (o n )

t=5 s
E on

E o ff
E ts = ( Eo n +E o ff )

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IRG4BC40U
Case Outline and Dimensions TO-220AB

2 .8 7 (.1 1 3 )
2 .6 2 (.1 0 3 )

1 0 .5 4 (.41 5 )
1 0 .2 9 (.40 5 )

3.78 (.149)
3.54 (.139)
-A-

1.32 (.052)
1.22 (.048)

6.47 (.255 )
6.10 (.240 )

1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )

1.15 (.045)
M IN
1

1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 )

N O TE S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 2 0 A B .

LEAD
1234-

3X

1 .4 0 (.0 5 5 )
3 X 1 .1 5 (.0 4 5 )

-B -

4.69 (.185)
4.20 (.165)

3.96 (.160)
3.55 (.140)

A S S IG N M E N T S
GA TE
C O L LE C T O R
E M IT T E R
C O L LE C T O R

4.06 (.160 )
3.55 (.140 )

3X

0.93 (.037)
0.69 (.027)

0 .3 6 (.01 4 )

M B A M

2 .5 4 (.1 0 0)

3X

0.55 (.022)
0.46 (.018)

2.92 (.115)
2.64 (.104)

2X

CONFORMS TO JEDEC OUTLINE TO-220AB

D im e ns io ns in M illim e ters a nd (In c he s )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00

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