(a) Structure Specification
Structure MESH specification
Structure REGION specification
ELECTRODE placement
DOPING profile specification
(b) Model Specification
Defining MATERIAL type for each region (SiO2 or Al, etc.)
Invoke appropriate physical MODELS
Setting boundary conditions and CONTACT information
INTERFACE specification
c) Numerical Method Selection
Invoke suitable numerical solvers such as Gummel, Newton, or Bulk
METHOD for different operating conditions with appropriate
parameters such as number of iteration, error limit, etc.
(d) Solution Specification
LOG file declaration to contain I-V characteristics
Solution of device using SOLVE with intervals for bias voltage
(or drive current) specification
Specifying data types to be solved (e.g., recombination
parameter, bad energy, etc.).
(e) Result Analysis
Parameter extraction via EXTRACT command
Analysing device structure with different bias condition using
graphical post-processing tool TONYPLOT