Power Ring Film Capacitors TM
SBE Part 700D10896-348
Power Ring Film Capacitor™
1000 µF, 600 Vdc
The 700D10896-348 Power Ring is a
600Vdc, 1000 µF DC Link Capacitor with
Ring Film Capacitors™
Powerand
an ESR of 125 micro-Ohms at 20kHz
an ESL of less than 5nH. SBE Part #: 700D10896-348
Electrical Specifications
Power Ring Film Capacitor™ ESL: Less than 5 nH in a suitable
SBE Part #: 700D10896-348
1000 µF, 600 VDC laminar bus structure
Capacitance/Tolerance: 1000 µF ±10%
Operating Temperature: -40°C to +85°C at full
DC Voltage Rating: 600 Vdc DC voltage rating
Electrical Specifications
Dielectric/Construction: Metallized polypropylene. Voltage, Temperature De-rate voltage linearly to
Part #:
SBE Single section design
700D10896-348
De-rating: 400 Vdc from +85°C to +105°C
Capacitance/Tolerance:
Dielectric Withstand: 1000Units
µF ±10%
100% tested at DC
Voltage Rating:
DC 600potential
VDC of 750 Volts for two System Fault Current 10,000 Amps maximum
Dielectric/Construction:
minutes at 25°C Rating
Metallized Polypropylene. Single section design, (external
non-inductively to the
wound
capacitor):
Dielectric Withstand: Unit shall withstand a DC potential of 750 Volts for two minutes
Insulation Resistance: 100 MΩ Min at +25°C
Typical
ESR ESR vs. Frequency:
vs. Frequency: RMS Current Rating:
2 600
500
1.5
Maximum Ripple Current (A rms)
ESR, milliohms
Case Side Cooling Only
400
Case and Bus Side Cooling
1 300
200
0.5 700D348 with 20 kHz ripple current
100 Temperature rise due to capacitor losses only
Bus heat load NOT included
0 0
0.01 0.1 1 10 100 1000 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
Frequency, KHz Case Temperature (oC)
SBE reserves the right to amend design data
At the Leading Edge of Film Capacitor Technology®
1. The thermal resistance is that from capacitor to application. This is a function of the application
environment, not the capacitor itself.
2. The capacitor can handle extreme current for small duty ratios. Trise occurs very slowly. This is
because the capacitor has a high specific heat.
Power Ring Film Capacitors
3.
TM
These charts can be adapted for other currents by multiplying y axis values for any time by
(Iapp/200)²
SBE Part 700D10896-348
4. Internal capacitor Trise is added to the capacitor surface/terminal temperature.
5. For 200 ARMS the assumed 10°C internal Trise is very conservative based on simulation results
and verification measurements.
6. Terminals are assumed to be at case temperature.
Thermal Specifications Sample 1.
Capacitor surface temperature rise above application
Here are two representations of “Capacitor Surface environment
Sample 1. @ 200
Capacitor Amps
surface RMS current
temperature rise aboveload, 10 KHz.
application environment @ 200 Amps
Temperature over Time” for two specific Thermal Thermal RMS current load, 10 KHz. Thermal resistance = 0.5°C/W:
resistance = 0.5°C/W:
Resistances of 1°C/W and 0.5°C/W. 28
Notes regarding these graphs:
Capacitor Surface Temp. deg C
27.5
• The thermal resistance is that from capacitor to
27
application. This is a function of the application
environment, not the capacitor itself. 26.5
• The capacitor can handle extreme current for small 26
duty ratios. Trise occurs very slowly. This is because
the capacitor has a high specific heat. 25.5
• These charts can be adapted for other currents by 25
multiplying y axis values for any time by (Iapp/200)² 0 1000 2000 3000 4000
Time in seconds
• Internal capacitor Trise is added to the capacitor
surface/terminal temperature. Sample 2.
Capacitor surface temperature rise above application
• Terminals are assumed to be at case temperature. environment
Sample 2. @ 200
Capacitor Amps
surface RMS current
temperature load,application
rise above 10 KHz. environment @ 200 Amp
RMS current load, 10 KHz. Thermal resistance = 1°C/W:
Thermal resistance = 1°C/W:
31
Capacitor SurfaceTemp. deg C
30
29
28
27
Mechanical Specifications
26
Dimensions: Refer to layout details
Terminals: Tin plated copper, 25
0.032” thick 0 2000 4000 6000 8000
Encapsulation: Molded polymer case, Time in seconds
potted with RTV
Marking:
SBE SBE company identification Mechanical Specifications
700D348 SBE “short form” part number Dimensions: Refer to layout details
1000 µF ±10% Capacitance value and Terminals: Nickel plated copper, 0.032” thick
tolerance Encapsulation: Polycarbonate outer housing, potted with RTV silicone
600 Vdc DC voltage rating Marking: SBE SBE Company Identification
yyww-lot#-unit 12-digit serial number (date 700D348 SBE Part Number
code, lot number, unit number) 1000 μF ±10% Capacitance value and tolerance
600 VDC DC Voltage Rating
yyww Weekly date code (i.e. 0915 = 15th week of 2009)
Mechanical Mounting and additional thermal notes:
This capacitor is optimized for extremely low self inductance when connected to a suitable coplana
structure. When so connected, the capacitor is very rigidly attached to such a structure and thus d
SBE reserves the rightnot
to amend designneed
necessarily datato be mounted to a chassis. However, the capacitor case can be attached to
SBE Inc. 81 Parker Road telephone: 802.476.4146
application surface/heat sink, etc.web site: www.SBElectronics.com
if desired. can be part of the bu
When so mounted, the capacitor
structure support. Use of thermal interface compound between the capacitor case and application
Barre, Vermont 05641 USA fax: 802.661.3950 e-mail: PowerRing@SBElectronics.com
surface/heat sink will assist with removal of capacitor and bus heat. Note that the capacitor interna
is VERY small, and other bus structure heat sources are very likely significantly higher than the hea
added to the bus by the capacitor. Capacitor dissipation is approximately 5W at 200ARMS, from 1
Power Ring Film Capacitors TM
SBE Part 700D10896-348
Mechanical Mounting and Additional Thermal Notes: that the capacitor internal heating is VERY small, and
other bus structure heat sources are very likely signifi-
This capacitor is optimized for extremely low self cantly higher than the heat added to the bus by the
inductance when connected to a suitable laminar bus capacitor. Capacitor dissipation is approximately 5W at
structure. When so connected, the capacitor is very 200Arms, from 1-100KHz. It is highly recommended to
rigidly attached to such a structure and thus does not use infrared thermal imaging from a system cold start
necessarily need to be mounted to a chassis. However, to determine the location and relative magnitude of
the capacitor case can be attached to an application thermal input to the bus. The capacitor may well func-
surface/heat sink, etc. if desired. When so mounted, tion as a thermal conduit for bus structure heat, and
the capacitor can be part of the bus structure sup- it will be very possible that the capacitor internal hot
port. Use of thermal interface compound between the spot is less than the terminal temperature.
capacitor case and application surface/heat sink will Thermal contour maps are available for some repre-
assist with removal of capacitor and bus heat. Note sentative conditions.
Layout Details:
Revisions
NOTES:
REV. DESCRIPTION CHG CHK APR DATE
BY BY BY
1. All Hole Positions Inspected
2. All Dimensions Inspected Unless 01 Initial Release - - - -
Marked As Reference 02 Standardized Layout View AGH MGS MSB 12/14/2010
7X 45.0°
22.5°
6.868 C
Bolt Circle
A 16X M5X0.8 - 6H THRU
28 in-lbs MAX Torque
.020 A B C
8.746
Bolt Circle
8.465
4X .197±.005 THRU .040
Accepts 1/4" Plastite Screw 16 Surfaces
9.252 40 in-lbs MAX Torque
.020 M A B C .260
Bolt Circle
2.154
A
1.000
NON-TOLERANCED DIMENSIONS ARE BASIC
.500 SBE, INC.
.663 .010 A B C 81 PARKER ROAD
.280 UNLESS OTHERWISE SPECIFIED:
BARRE, VT 05641 USA
ALL DIMENSIONS ARE IN INCHES 802.476.4146 FAX: 802.661.3950
TITLE
Power Ring Capacitor,
GEOMETRIC TOLERANCING PER: Y14.5-2009
1000uF, 600VDC
DRAWN MGS
DETAIL A CHECKED DMB 11/12/2010
DWG. NO.
PROPRIETARY AND CONFIDENTIAL
THE INFORMATION CONTAINED IN THIS DRAWING IS THE SOLE PROPERTY OF SBE. ANY
SCALE 1 : 1
ENG APPR. MSB 11/12/2010 700D348LV
REPRODUCTION IN PART OR AS A WHOLE WITHOUT THE WRITTEN PERMISSION OF SBE IS PROHIBITED. MATERIAL FINISH SIZE REV
DO NOT SCALE DRAWING A 02 SHEET 1 OF 1
Contact SBE Inc. to discuss your specific requirements.
SBE reserves the right to amend design data
At the Leading Edge of Film Capacitor Technology®
Power Ring Film Capacitors TM
SBE Part 700D10896-348
Integrating the Power Ring in an Existing Design
Advantages of Power Ring DC Link Capacitors
The “stacked” inverter design evolves from modifying
• Ability to handle higher ripple currents with less a typical automotive inverter by utilizing the excess
capacitance, weight, and volume space left above the IGBT module (figure 1). By bend-
• Use of 105°C ICE coolant for power ing the end of the laminar bus plate, the IBGT, die,
electronics cooling cooling plate, and the ring capacitor are “stacked” on
• Demonstrated MTTF >> 20,000 hours for realistic top of each other in a symmetrical fashion. The ring
operating conditions, due to lower losses and capacitor is placed underneath the cooling plate.
better thermal performance The cooling plate is shared with the IGBT module
• Minimization of IGBT overshoot and elimination of the which is mounted on the top.
need for additional snubber capacitors
• Most effective isolation of DC storage or supply Figure 1
from AC switching artifacts
• Lowest industry ESL at <5nH typical with a
properly integrated bus structure
• Smaller inverter packaging
• Overall system cost savings
• Capacitance from 400 µF to 2500 µF and voltages
from 250 Vdc to 1200 Vdc
The SBE Power Ring Film Capacitors™ utilize tradition-
ally available and economical polypropylene and poly-
ester capacitor dielectric films. However, the power
of the shape™ allows for both thermal and electrical
performance which has been unachievable in the film Figure 2
capacitor industry to date.
Power Ring System Performance
The combination of lowest available Trise, ESR and ESL
coupled with highest ripple current handling capability
enable the development of industry leading inverter
designs with unbeatable performance and reliability.
Lowest available Trise for a given ripple current
Lowest available ESL, less than 5nH demonstrated with
optimal integrated bus
Lowest available ESR, less than 150 micro-Ohms typical Figure 2 shows the “stacked” inverter design after the
Crown terminal architecture provides for a multitude integration of the ring capacitor and the laminar bus
of current paths which allows the monolithic capacitor plate. By now combining both aspects of vertical inte-
to function as a distributed element with a much lower gration and the low temperature rise characteristics
ESR than an equivalent array of smaller parts. SBE has of the capacitors, an increase to 50% or more volume
#SBE-PR-348-01/11
developed a next generation capacitor simulation tool reduction is realistically possible. These improvements
that allows accurate calculation of hotspot tempera- clearly translate into weight and cost reductions.
ture to allow optimal rating with excellent reliability.
SBE reserves the right to amend design data
SBE Inc. 81 Parker Road telephone: 802.476.4146 web site: www.SBElectronics.com
Barre, Vermont 05641 USA fax: 802.661.3950 e-mail: PowerRing@SBElectronics.com
