GP2L01/GP2L01F

High Sensitivity, Long Focal

GP2L01/GP2L01F Distance Type
Photointerrupter

■ Features ■ Outline Dimensions ( Unit : mm )

1. Long focal distance 19.0 ± 0.2 Internal connection
diagram

2 - (3.5)
2. High current transfer ratio 12.0

0.3
GP2L01 CTR: MIN. 30% 2 - (2.54)

GP2L01F CTR: MIN. 25%

at I F = 10mA }

6.0
2. Visible light cut-off type: GP2L01F

(5.0)
4 3 2 1
2 - 19.5 ˚ 4 - C2.0
■ Applications

( 2.5 ) Detector center

2 - φ 3.2 ± 0.2
1. Copiers, printers 4- 0.45 ± 0.2
1 Cathode
2. Automatic vending machines, ticket vend-

0.7MAX.
4 3 2 1 2 Anode

4.5 17.0 ± 1.0

16.0 ± 1.0
ing machines ❈ 3 Emitter
4 Collector
3. Optoelectronic switches, optoelectronic
counters

2.0
24.0 ❈ Protrusion of resin for fixing
∗Unspecified tolerances shall be as follows;
Dimensions(d) Tolerance
d<= 6.0 ± 0.1
6.0<d<= 18.0 ± 0.2
18.0<d<= 24.0 ± 0.25
∗( ) : Reference dimensions

■ Absolute Maximum Ratings ( Ta = 25˚C )

Parameter Symbol Rating Unit
Forward current IF 50 mA
∗1
Peak forward current I FM 1 A
Input
Reverse voltage VR 6 V
Power dissipation P 75 mW
Collector-emitter voltage V CEO 35 V
Emitter-collector voltage V ECO 6 V
Output
Collector current IC 40 mA
Collector power dissipation PC 75 mW
Operating temperature T opr - 25 to + 85 ˚C
Storage temperature T stg - 40 to + 100 ˚C
∗2
Soldering temperature T sol 260 ˚C
∗1 Pulse width<= 100 µ s, Duty ratio= 0.01
∗2 For 3 seconds

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
 GP2L01/GP2L01F

■ Electro-optical Characteristics ( Ta = 25˚C )

Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage VF I F = 20mA - 1.2 1.4 V
Input Peak forward voltage V FM I FM = 0.5A - 3.0 4.0 V
Reverse current IR V R = 3V - - 10 µA
Output Collector dark current I CEO VCE = 10V - - 10 - 6 A
∗3
Collector GP2L01 3 - - mA
Ic I F = 10mA, VCE = 2V
Transfer Current GP2L01F 2.5 - 25 mA
charac- Rise time tr I C = 10mA, V CE = 2V, R L = 100 Ω - 80 400 µs
Response time
teristics Fall time tf d = 5mm - 70 350 µs
∗4
Leak current I LEAK I F = 10mA, VCE = 2V - - 100 µA
∗3 Test method : A reflective object shall be an OMS test card ( white ) specified by Sharp, and be 5.0mm away from the sensor.
∗4 Wihtout reflective object

Fig. 1 Forward Current vs. Fig. 2 Collector Power Dissipation vs.

Ambient Temperature Ambient Temperature
60 80
75
Collector power dissipation P C ( mW ) 70
50
60
Forward current I F ( mA )

40
50

30 40

30
20
20
10
10

0 0
- 25 0 25 50
75 85 100 - 25 0 25 50 75 85 100
Ambient temperature T a ( ˚C ) Ambient temperature T a ( ˚C )

Fig. 3 Peak Forward Current vs. Duty Ratio Fig. 4 Forward Current vs. Forward Voltage

500
Pulse width <= 100 m s
2000 T a= 25˚C T a = 75˚C 25˚C
200
50˚C 0˚C
Peak forward current I FM ( mA )

1000 - 25˚C
100
( mA )

500 50
F
Forward current I

20
200
10
100
5
50
2
20 1
10 - 3 2 5 10 - 2 2 5 10 - 1 2 5 1 0 0.5 1.0 1.5 2.0 2.5 3.0
Duty ratio Forward voltage V F ( V )
 GP2L01/GP2L01F

Fig. 5 Collector Current vs. Forward Current Fig. 6 Collector Current vs.
Collector-emitter Voltage
25 30
T a = 25˚C
V CE = 2V
T a = 25˚C
25
20 P C ( MAX. )

Collector current I C ( mA )
Collector current I C ( mA )

I F = 20mA
20
15 15mA
15

10 10mA
10

5 5 5mA

0 0
0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10
Forward current I F ( mA ) Collector-emitter voltage V CE ( V )

Fig. 7 Relative Collector Current vs. Fig. 8 Collector Dark Current vs.
Ambient Temperature Ambient Temperature
10 -4
125 I F = 10mA 5
V CE= 10V
VCE = 2V -5
10
100 5
Collector dark current I CEO ( A )
Relative collector current (%)

10 -6
5
75 10 -7
5

10 -8
50 5
10 -9

5
25
10 - 10
5
10 - 11
0
- 25 0 25 50 75 100 - 25 0 25 50 75 100
Ambient temperature T a ( ˚C ) Ambient temperature T a ( ˚C )

Fig. 9 Response Time vs. Load Resistance

Test Circuit for Response Time
1000
V CE= 2V
500 I C = 10mA
T a = 25˚C tr V CC
200
tf RL
Response time ( µ s )

100 Input R D Input

Output
50
Output 10%
20
td
90%
10 td ts
tr tf
5 ts

1
5 10 20 50 100 200 500 1000
Load resistance R L ( Ω )
 GP2L01/GP2L01F

Fig.10 Frequency Response Fig.11 Relative Collector Current vs.

Distance between GP2L01 ( F ) and Test Card
100
I F = 10mA
V CE= 2V V CE= 2V
0 I C = 10mA 80

Relative collector current ( % )

T a = 25˚C
T a = 25˚C
Voltage gain AV ( dB )

-5 60
RL = 1kΩ
100Ω 10Ω

- 10 40

- 15 20

- 20 0
102 2 5 103 2 5 104 2 5 105 2 5 0 1 2 3 4 5 6 7 8 9 10
Frequency f ( Hz ) Distance between GP2L01(F) and test card d ( mm )

Fig.12 Relative Collector Current vs. Distance Characteristic Test Conditions

Card Moving Distance
100 Correspond to Fig.11
I F = 10mA SHARP OMS TEST CARD
d
VCE = 2V (White)
80
Relative collector current ( % )

d= 5mm
T a = 25˚C
GP2L01
60
(GP2L01F)
Correspond to Fig.12
SHARP OMS TEST CARD
40
Black White

20 0
d - +

0 Card moving direction

- 10 -8 -6 -4 -2 0 2 4 (Distance = L )
GP2L01
Card moving distance L ( mm )
(GP2L01F)

Fig.13 Collector Current vs. Illuminance ( Reference )

100
Test condition
50
Light source: White fluorescent lamp
Sharp FLR-40SW/M
20
PT431 VCE = 2V, T a = 25˚C
Collector current I C ( mA )

10 ( Note ) Comparison between outputs of

transparent resin molded type photo-
5 transistor (PT431 ) and visible light
cut-off type (PT431F )
2

0.5 PT431F
● Please refer to the chapter “ Precautions for Use” .
0.2

0.1
100 200 500 1000 2000 5000
Illuminance under fluorescent lamp ( 1x )