BCP53 — PNP General-Purpose Amplifier
March 2014
BCP53
PNP General-Purpose Amplifier
Description
4
This device is designed for general-purpose medium-
power amplifiers and switching circuits for collector cur-
rents to 1.0 A. Sourced from process 79. 3
2
1 SOT-223
1. Base 2,4. Collector 3. Emitter
Ordering Information
Part Number Marking Package Packing Method
BCP53 BCP53 SOT-223 4L Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -80 V
VCBO Collector-Base Voltage -100 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current - Continuous -1.2 A
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operation.
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP53 Rev. 1.1.0 1
BCP53 — PNP General-Purpose Amplifier
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Max. Unit
Total Device Dissipation 1.5 W
PD
Derate Above 25°C 12 mW/°C
RθJA Thermal Resistance, Junction to Ambient 83.3 °C/W
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -80 V
BVCBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -100 V
BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V
VCB = -30 V, IE = 0 -100 nA
ICBO Collector-Base Cut-Off Current
VCB = -30 V, IE = 0, TA = 125°C -10 μA
IEBO Emitter-Base Cut-Off Current VEB = -5.0 V, IC = 0 -10 μA
IC = -5.0 mA, VCE = -2.0 V 25
hFE DC Current Gain IC = -150 mA, VCE = -2.0 V 40 250
IC = -500 mA, VCE = -2.0 V 25
VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mV -0.5 V
VBE(on) Base-Emitter On Voltage IC = -500 mA, VCE = -2.0 V -1.0 V
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP53 Rev. 1.1.0 2
BCP53 — PNP General-Purpose Amplifier
Physical Dimensions
SOT-223
Figure 1. MOLDED PACKAGE, SOT-223, 4 LEAD (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA04A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf.
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP53 Rev. 1.1.0 3
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AccuPower¥ F-PFS¥
®*
AX-CAP®* FRFET® ®
SM
BitSiC¥ Global Power Resource PowerTrench ®
TinyBoost®
Build it Now¥ GreenBridge¥ PowerXS™ TinyBuck®
CorePLUS¥ Green FPS¥ Programmable Active Droop¥ TinyCalc¥
CorePOWER¥ Green FPS¥ e-Series¥ QFET® TinyLogic®
CROSSVOLT¥ Gmax¥ QS¥ TINYOPTO¥
CTL¥ GTO¥ Quiet Series¥ TinyPower¥
Current Transfer Logic¥ IntelliMAX¥ RapidConfigure¥ TinyPWM¥
DEUXPEED® ISOPLANAR¥ ¥ TinyWire¥
Dual Cool™ Making Small Speakers Sound Louder TranSiC¥
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TriFault Detect¥
EfficientMax¥ MegaBuck¥ SignalWise¥ TRUECURRENT®*
ESBC¥ MICROCOUPLER¥ SmartMax¥ PSerDes¥
® MicroFET¥ SMART START¥
MicroPak¥ Solutions for Your Success¥
Fairchild® SPM®
MicroPak2¥ UHC®
Fairchild Semiconductor® STEALTH¥
MillerDrive¥ Ultra FRFET¥
FACT Quiet Series¥
MotionMax¥ SuperFET®
FACT® UniFET¥
mWSaver® SuperSOT¥-3
FAST® VCX¥
OptoHiT¥ SuperSOT¥-6
FastvCore¥ VisualMax¥
OPTOLOGIC® SuperSOT¥-8
VoltagePlus¥
FETBench¥ OPTOPLANAR® SupreMOS®
FPS¥ XS™
SyncFET¥
Sync-Lock™ ❺™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I68
© Fairchild Semiconductor Corporation www.fairchildsemi.com