LITE-ON
SEMICONDUCTOR
MCR100-6
SCRs
Sensitive Gate
Sillicon Controlled Rectifiers 0.8 AMPERES RMS
Reverse Blocking Thyristors 400 VOLTS
TO-92 (TO-226AA)
FEATURES
Sensitive Gate Allows Triggering by Microcontrollers and Other
logic Circuits
TO-92
Blocking Voltage to 400 Volts
DIM. MIN. MAX.
On–State Current Rating of 0.8 Amperes RMS at 80℃
A 4.45 4.70
High Surge Current Capability — 10 Amperes
B 4.32 5.33
Minimum and Maximum Values of IGT, VGT and IH Specified for
C 3.18 4.19
Ease of Design
D 1.15 1.39
Immunity to dV/dt — 20 V/us Minimum at Tj=110℃
E 2.42 2.66
Glass-Passivated Surface for Reliability and Uniformity
F 12.7 ----
Pb-Free Package
G 2.04 2.66
I 3.43 ----
MECHANICAL DATA All Dimensions in millimeter
Case: Molded plastic
Weight: 0.007 ounces, 0.2 grams
PIN A SSIGNMENT
1 Cathode
2 Gate
3 Anode
MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage VDRM
400 Volts
(TJ= -40 to 110℃, Sine Wave, 50 to 60 Hz; Gate Open) VRRM
On-State RMS Current (Tc = 80℃) 180° Conduction Angles IT(RMS) 0.8 Amps
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25℃) ITSM 10 Amps
Circuit Fusing Consideration (t = 8.3 ms) I2 t 0.415 A2 s
Forward Peak Gate Power (Ta = 25℃, Pulse Width ≦1.0 us) PGM 0.1 Watts
Forward Average Gate Power (Ta = 25℃, t = 8.3 ms) PG(AV) 0.1 Watts
Forward Peak Gate Current (Ta = 25℃, Pulse Width≦1.0 us) IGM 1 Amps
Reverse Peak Gate Voltage (Ta = 25℃, Pulse Width ≦1.0 ms) VGRM 5 Volts
Operating Junction Temperature Range @ Rate VRRM and VDRM TJ -40 to + 110 ℃
Storage Temperature Range Tstg -40 to + 150 ℃
REV. 1, Oct-2010, KTXD24
RATING AND CHARACTERISTIC CURVES
MCR100-6
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance – Junction to Case RthjC 75 ℃/W
Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds TL 260 ℃
ELECTRICAL CHARACTERISTICS (Tj= 25℃ unless otherwise noticed)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERSITICS
Peak Reptitive Forward or Reverse Blocking Current TJ=25℃ IDRM --- --- 10
IRRM --- --- 100 uA
(VD=Rated VDRM and VRRM; RGK =1K Ohms) TJ=110℃
ON CHARACTERISTICS
Peak Forward On-State Voltage
VTM --- --- 1.7 Volts
(ITM= ± 1.6A Peak, Pulse Width≦ 1.0ms, Duty Cycle≦ 1%)
Gate Trigger Current(VD= 7.0 Vdc, RL=100 Ohms) (1) IGT --- --- 50 uA
TJ= 25℃ --- --- 5
Holding Current(VD= 7.0 Vdc, Intitiating Current = 20mA) IH mA
TJ= -40℃ --- --- 10
TJ= 25℃ --- --- 0.8
Gate Trigger Voltage(VD= 7.0 Vdc, RL=100 Ohms) (1) VGT Volts
TJ= -40℃ --- --- 1.2
TJ= 25℃ --- --- 10
Latch Current(VD= 7.0 Vdc, RL 100 Ohms) IL mA
TJ= -40℃ --- --- 15
DYNAMIC CHARACTERISITCS
Critical Rate of Rise of Off-State Voltage
dv/dt 20 --- --- V/us
(VD=Rated VDRM, Exponential Waveform, PGK=1K Ohms, TJ=110℃
(1) RGK current is not included in measurement
RATING AND CHARACTERISTIC CURVES
MCR100-6
VTM - IT
10
IT(A), Instantaeous on-state
current(Amps)
℃
Tj=110℃
℃
Tj=25℃
0.1
0 1 2 3 4 5 6 7
VT, Instantaneous on-state voltage(Volts)
Figure 1. On-State Characteristics
RATING AND CHARACTERISTIC CURVES
MCR100-6
Typical gate trigger current V.S. juction Typical gate tigger voltage V.S. juction
temperature temperature
60.00 0.80
0.75
50.00
Gate tigger current (uA)
Gate tigger voltage (V)
0.70
40.00
0.65
30.00 0.60
0.55
20.00
0.50
10.00
0.45
0.00 0.40
-40 -25 -10 5 20 35 50 65 80 95 110 -40 -25 -10 5 20 35 50 65 80 95 110
℃)
Tj, Juction temperature (℃ ℃)
Tj, Juction temperature (℃
Figure 2. IGT(TJ) / IGT(25℃) versus TJ Figure 3. VGT(TJ) / VGT(25℃) versus
Typical holding current V.S. juction Typical latch current V.S. juction
temperature temperature
2.60 0.50
Holding current (mA)
2.40 0.45
Latching current (mA)
2.20 0.40
2.00 0.35
1.80 0.30
1.60 0.25
1.40
0.20
1.20
0.15
-40 -25 -10 5 20 35 50 65 80 95 110
-40 -25 -10 5 20 35 50 65 80 95 110
℃)
Tj, Juction temperature (℃ ℃)
Tj, Juction temperature (℃
Figure 4. IH versus TJ Figure 5. IL versus TJ
1
IT(RMS), On-State current(A)
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120
TC, Case Temperature
Figure 6. On-Stage Current Rating Curve
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MCR100-6
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