INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
• The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
• The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4000B
gates
Dual 3-input NOR gate and inverter
Product specification January 1995
File under Integrated Circuits, IC04
Philips Semiconductors Product specification
HEF4000B
Dual 3-input NOR gate and inverter
gates
DESCRIPTION
The HEF4000B provides the positive dual 3-input NOR
function. A single stage inverting function with standard
output performance is also accomplished. The outputs are
fully buffered for highest noise immunity and pattern
insensitivity of output impedance.
Fig.2 Pinning diagram.
HEF4000BP(N): 14-lead DIL; plastic
(SOT27-1)
HEF4000BD(F): 14-lead DIL; ceramic (cerdip)
(SOT73)
HEF4000BT(D): 14-lead SO; plastic
(SOT108-1)
Fig.1 Functional diagram. ( ): Package Designator North America
FAMILY DATA, IDD LIMITS category GATES
See Family Specifications
Fig.3 Logic diagram.
January 1995 2
Philips Semiconductors Product specification
HEF4000B
Dual 3-input NOR gate and inverter
gates
DC CHARACTERISTICS
For the single inverter stage (I7/O3):
see Family Specifications for input voltages HIGH and LOW (unbuffered stages only).
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD TYPICAL EXTRAPOLATION
SYMBOL TYP. MAX.
V FORMULA
Propagation delays 5 70 140 ns 43 ns + (0,55 ns/pF) CL
I1 to I6 → O1,O2 10 tPHL; tPLH 35 70 ns 24 ns + (0,23 ns/pF) CL
15 30 55 ns 22 ns + (0,16 ns/pF) CL
5 45 90 ns 18 ns + (0,55 ns/pF) CL
I7 → O3 10 tPHL; tPLH 25 50 ns 14 ns + (0,23 ns/pF) CL
(unbuffered output) 15 20 40 ns 12 ns + (0,16 ns/pF) CL
Output transition times 5 60 120 ns 10 ns + (1,0 ns/pF) CL
HIGH to LOW 10 tTHL 30 60 ns 9 ns + (0,42 ns/pF) CL
15 20 40 ns 6 ns + (0,28 ns/pF) CL
5 60 120 ns 10 ns + (1,0 ns/pF) CL
LOW to HIGH 10 tTLH 30 60 ns 9 ns + (0,42 ns/pF) CL
15 20 40 ns 6 ns + (0,28 ns/pF) CL
VDD
TYPICAL FORMULA FOR P (µW)
V
Dynamic power 5 1 000 fi + ∑ (foCL) × VDD2 where
dissipation per 10 7 700 fi + ∑ (foCL) × VDD 2 fi = input freq. (MHz)
package (P) 15 28 700 fi + ∑ (foCL) × VDD 2 fo = output freq. (MHz)
CL = load capacitance (pF)
∑ (foCL) = sum of outputs
VDD = supply voltage (V)
January 1995 3
Philips Semiconductors Product specification
HEF4000B
Dual 3-input NOR gate and inverter
gates
APPLICATION INFORMATION
The following information (Figs 4 to 7) is only for the single
inverter stage (I7/O3).
Fig.4 Voltage gain (VO/VI) as a function of supply Fig.5 Supply current as a function of supply
voltage. voltage.
This is also an example of an analogue amplifier using the
single inverter stage (I7/O3) of the HEF4000B.
Fig.6 Test set-up for measuring graphs of Figs 4
and 5.
January 1995 4
Philips Semiconductors Product specification
HEF4000B
Dual 3-input NOR gate and inverter
gates
Fig.7 Test set-up for measuring forward transconductance gfs = dio/dvi at vo is constant (see also graph Fig.8).
A: average
B: average + 2 s,
C: average − 2 s, in where ‘s’ is the observed standard deviation.
Fig.8 Typical forward transconductance gfs as a function of the supply voltage at Tamb = 25 °C.
January 1995 5
