Spec. No.
: C410N3
CYStech Electronics Corp. Issued Date : 2007.06.28
Revised Date :
Page No. : 1/5
30V N-CHANNEL Enhancement Mode MOSFET
MTN351AN3
Features
• VDS=30V
RDS(ON)=60mΩ@VGS=10V, ID=3A
RDS(ON)=100mΩ@VGS=4.5V, ID=2A
• Lower gate charge
• Compact and low profile SOT-23 package
Equivalent Circuit Outline
MTN351AN3 SOT-23
S
G：Gate
G
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 3 (Note 1) A
Pulsed Drain Current IDM 10 (Note 2 & 3) A
Maximum Power Dissipation 1.38 W
PD
Linear Derating Factor 0.01 W/°C
Thermal Resistance, Junction to Ambient Rth, j-a 90 (Note 1) °C/W
Operating Junction and Storage Temperature Tj, Tstg -55 ~ +150 °C
Note : 1. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
2. Pulse width limited by maximum junction temperature
3. Pulse width≤300μs, duty cycle≤2%
MTN351AN3 CYStek Product Specification
Spec. No. : C410N3
CYStech Electronics Corp. Issued Date : 2007.06.28
Revised Date :
Page No. : 2/5
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BVDSS 30 - - V VGS=0, ID=250μA
∆BVDSS/∆Tj - 0.1 - V/°C Reference to 25°C, ID=1mA
VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250μA
IGSS - - ±100 nA VGS=±20V, VDS=0
- - 1 μA VDS=30V, VGS=0
IDSS
- - 10 μA VDS=24V, VGS=0, Tj=55°C
- - 60 ID=3A, VGS=10V
*RDS(ON) mΩ
- - 100 ID=2A, VGS=4.5V
*GFS - 13 - S VDS=5V, ID=3A
Dynamic
Ciss - 660 -
Coss - 90 - pF VDS=25V, VGS=0, f=1MHz
Crss - 70 -
*td(ON) - 6 -
*tr - 20 - VDS=15V, ID=3A, RD=3Ω
ns
*td(OFF) - 20 - VGS=10V, RG=3.3Ω
*tf - 3 -
*Qg - 8.5 -
*Qgs - 1.5 - nC VDS=16V, ID=3A, VGS=4.5V
*Qgd - 3.2 -
Rg - 0.9 - Ω VGS=15mV, f=1MHz
Source-Drain Diode
*VSD - - 1.2 V VGS=0V, IS=1.2A
*trr - 14 - ns
IS=3A, VGS=0V, dI/dt=100A/μs
*Qrr - 7 - nC
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device Package Shipping Marking
SOT-23
MTN351AN3 3000 pcs / Tape & Reel 351AN
(Pb-free)
MTN351AN3 CYStek Product Specification
Spec. No. : C410N3
CYStech Electronics Corp. Issued Date : 2007.06.28
Revised Date :
Page No. : 3/5
Characteristic Curves
MTN351AN3 CYStek Product Specification
Spec. No. : C410N3
CYStech Electronics Corp. Issued Date : 2007.06.28
Revised Date :
Page No. : 4/5
Characteristic Curves(Cont.)
MTN351AN3 CYStek Product Specification
Spec. No. : C410N3
CYStech Electronics Corp. Issued Date : 2007.06.28
Revised Date :
Page No. : 5/5
SOT-23 Dimension
Marking:
A
L
3 351AN
TE
S
B
1 2
V G 3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C Style: Pin 1.Gate 2.Source 3.Drain
D K
H J
*: Typical
DIM Inches Millimeters Inches Millimeters
DIM
Min. Max. Min. Max. Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN351AN3 CYStek Product Specification
