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Case : 2N350A, 2N351 A, 2N376A

This document provides specifications for several PNP germanium power transistors including the 2N375, 2N618, 2N1359, 2N1360, 2N1362 through 2N1365. It lists maximum ratings for collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and power dissipation. Thermal characteristics and typical electrical characteristics are also specified, such as cutoff currents, breakdown voltages, current gain, and transconductance.

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0% found this document useful (0 votes)
107 views3 pages

Case : 2N350A, 2N351 A, 2N376A

This document provides specifications for several PNP germanium power transistors including the 2N375, 2N618, 2N1359, 2N1360, 2N1362 through 2N1365. It lists maximum ratings for collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and power dissipation. Thermal characteristics and typical electrical characteristics are also specified, such as cutoff currents, breakdown voltages, current gain, and transconductance.

Uploaded by

Nitin
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2N350A, 2N351 A, 2N376A (continued)

OUTPUT CURRENT versus INPUT CURRENT verSU$


EMITTER·DRIVE VOLTAGE EMmER·DRIVE VOLTAGE
5.0 200

4.5 II
I 1I 110
/
2N!7'A~
'- / / I
2N!50 A}
2N!!!1 A ~ /
/ J '/ ~ 120
2N!7' A
'-..j
2N!5IA
'- / // ~ /
I '// '-2N!50A
ii3 10
I
Vh' ! V
fA v /
,
1.0 40

.5
~~ VCE = 2 VOLTS
/ VCE' 2 VOLTS

o ~ o ....... /
o .2 .4 .6 .1 1.0 1.2 1.4 1.11 1.1 o .2 .4 .• .1 1.0 1.2 1.4 1.6 1.8
VIE' BASE TO EM IlTER VOLTAGE (VOLTS) VIE' BASE TO EMITTER VOLTAGE (YOLTS)

2N375 (GERMANIUM)
2N618
2N1359
2N1360
2N1362 thru 2N1365

CASE~
(TO-3)
PNP germanium power transistors for general pur-
pose switching and amplifier applications.

MAXIMUM RATINGS

Rating 2N1359 2N375 2N1362 2N1364 Unit


Symbol 2N1360 2N618 2N1363 2N1365
Collector-Emitter Voltage VCES 40 60 75 100 Vdc

Collector-Base Voltage VCB 50 80 100 120 Vdc

Emitter-Base Voltage VEB 25 40 50 60 Vdc

Collector Current-Continuous IC 3.0 Adc


Peak 10

Total Device Dissipation @ T C = 250 C PD 106 Watts


Derate above 25 0 C 1.25 W/oC

Operating and Storage Junction T J' T stg °c


Temperature Range -65 to +110

THERMAL CHARACTERISTICS

Cha racteristic Symbol Max Unit


Thermal Resistance, Junction to Case 6JC 0.. 8 °C/W

2-22
2N375, 2N618, 2N1359, 2N1360, 2N1362 thru·2N1365 (continued)
ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)

Characteristic TJPls S,mbDI Minimum TJPlcal Maximum Unit


Collector-Base Cutoff Current 2N1359, 2N1360 ICSO rnA
(V CB = 40 V, IE = 0) -- -- 3,0
(V CB = 50 V, IE = 0) -- -- 20.0

(VCS = 60 V, IE " 0) 2N375, 2N61B -- -- 3.0


(VCS" BO V, IE " 0) -- -- 20.0

(V CS =75V, IE = 0)
(VCS" 100 V, IE" 0)
2N1362, 2N1363 --
--
--
--
3.0
20.0

(VCS" 100 V, IE " 0)


(VCS" 120 V, IE " 0)
2N1364, 2N1365 ---- --
--
3.0
20.0

Collector-Sase Cutoff Current


at Tc " +90°C ICSO -- -- 20 rnA
VCS = 1/2 SV CES rating

Emitter-Sase Cutoff Current


(VES " 12 V, Ie " 0) IESO -- -- 0.5 mA

(VES " 25 V, IC = 0) 2N1359, 2N1360 -- -- 20


(VES = 50 V, IC = 0) 2N1362, 2N1363 -- -- 20
(VES = 60 V, IC = 0) 2N1364, 2N1365 -- -- 20

Collector -Emitter Sreakdown


Voltage Vdc
IC = 500 mA, VES = 0) 2N1359, 2N1360 SV CES 40 -- --
------ --
2N375, 2N618 60
2N1362, 2N1363 75 --
2N1364, 2N1365 100 --
DC Current Transfer Ratio
(V CE = 4 V, IC = 1. OA) 2N1359, 375, 1362, 64
hFE
35 55 90
--
2N1360, 61B, 1363, 65 60 90 140
(VCE = 4V,Ic = LOA) 2N1359,
2N1360,
375, 1362,
61B, 1363,
64
65
15
20
22
35
----
Transconductance mhos
(VCE = 4 V, IC = LOA) 2N375 gFE O.B 1.25 2.2
2N6lB 1.0 1.6 2.5
2N1359, 2N1362, 2N1364
2N1360, 2N1363, 2N1365
0.8
1.0
1.25
1.6
----
Frequency Cutoff f kHz
(VCE = 4
(VCE = 4
V, IC
V, IC
= 1 A)
" 1 A)
2N375
2N618
Ole
5.0
5.0
8.5
8.5
----
(V CE = 4 V, IC = 3 A) 2N1359, 2N1362, 2N1364 7.0 10 --
(VCE = 4 V, Ie = 3 A) 2N1360, 2N1363, 2N1365 5.0 8.5 --
Collector Saturation Voltage VCE(sat) Vdc
(Ie = 2.0 A, Is = 200mA) 2N1359, 375, 1362, 64
2N1360, 618, 1363, 65
---- 0.4
0.3
1.0
0.8

Sase-Emitter Drive Voltage VSE Vdc


(Ie = 2.0A, IS " 200 mAl 2N1359, 375, 1362, 64 -- 0.7 --
2N1360, 61B, 1363, 65 -- 0,6 --
Collector-Emitter Punch-
Through Voltage V ESF Vdc

------
(VCS = 50 V, IC = 0) 2N1359, 2N1360 -- 1.25
(VCS = 100 V, IC = 0) 2N1362, 2N1363 -- 1.25
(VCS = 120 V, IC " 0) 2N1364, 2N1365 -- 1. 25

2-23
2N375 (continued)
POWER-TEMPERATURE DERATING CURVE
120 The maximum continuous power is
~
;;
related to maximum junction tempera-
! 110
.....
I'..... ture, by the thermal resistance fac-
tor. For d. c. or frequencies below
~
100

.~
.~
80
" 25 cps the transistor must be operated
within the constant Pn = Vc x Ic
is
.
. '"
60

40 '" '" , hyperbolic curve. This curve has a


value of 106 Watts at case tempera-
tures of 250 C and is 0 Watts at 110De
20
..... , with a linear relation between the two
temperatures such that
Po allowable = 1100 - Tc
20 40 60 80 100 110 0.8
Te' Case Temperature fC)

BASE-EMITTER VOLTAGE versus COLLECTOR CURRENT CURRENT GAIN versus COLLECTOR CURRENT
140 r--...,..--,......-..,.---,---,......-...,..-......,
0:;
1.5
Ve~ = 2 vi
~ 120 t---f~-+.--+--+---+--+--i

/2NI3~0
0
...
~
z \
'"~ ~ 100 1----+-~.t_--1 2N618 --I---+---i
0
>
... ~ 2N1363
...'" III I"' 2N1365

~~
~
:i
~ 0.75
(I)
80
60 1---~~-~--+---:~~-+--4--~
'''"'
"";.,
CD

,:
2NI359~~ .......................
40 -·2N375 Y ............
2N1362
2N1364
I --~
! -- __
20

o 0~--~--~--~----~--~----~~
o 0.5 1 1.5 2 2.5 3.5 0.5 1 1.5 2 2.5 3.5
Ie, COLLECTOR CURRENT (AMP) Ie, COLLECTOR CURRENT (AMP)
2N1362,2N1363 SAFE OPERATING AREAS 2N375, 2N618
20 20
M~X PEA~ ~AxlpEA~ I
Im~ !
~~s
I I
Ie 5ms Ims I
I
5ms 5bo
./ \
e
1\ II .A'~I
10 10
250~s 250~s

, ,
, ,
I'\. ...-- OR LESS
'\. \.\ OR LESS- "'\. ~
"- \ \
'\. "- \\ 5
4 \ \. \l\ 4
I\, \..
0::
::I! \ \ "- \. ~\ 0::
I'>.. 1\ \ \\
,coy
3 ::I! 3

'->
$
\
\ I~ ~
$ ........ ......... '\
t-
....
Z
2 I, "'"
..... ...a:
t-
Z
2 Ie MAX CONT. /
V\ t.....
'"'"::>u
'"0
I-

...
....
U 90.wL ~
............
N t"
'"::::>
'-'
a:
0
.........
t-
U
9LJT V ~~ '" ~ i"'-

...
0
POWER DISSIPATION
25°C CASE TEMPERATURE ... 0
POWER DISSIPATION
25°C CASE TEMPERATURE
......
u '-'
0.5 / ....... 0.5 "- .........
0.4 de / I"'-.. 0.4 J{
0.3
"r-.., I "'\
0.3
I
0.2 TO 75V, 3 mA
0.2

~ ~
T090V,3mA - WITH BACK BIAS APPlI=i=
WITH BACK BIAS APP~~ (PULSE CURVES ONLY)
(PULSE CURVES ONLY)
0.1 L J 1 0.1 I I III
o 10 20 30 40 50 60 70 80 o 5 10 15 20 25 30 35 40 45 50 55 60 65
COLLECTOR·EMITTER VOLTAGE (VOLTS) COLLECTOR·EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate I c - (Duty cycle of the excursions make no significant
V CE limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2-24

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