MJH11017, MJH11019,

MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features

High DC Current Gain @ 10 Adc hFE = 400 Min (All Types)

CollectorEmitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) MJH11018, 17

= 200 Vdc (Min) MJH11020, 19
= 250 Vdc (Min) MJH11022, 21
Low CollectorEmitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
PbFree Packages are Available*

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15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150250 VOLTS, 150 WATTS
NPN

BASE
1

BASE
1

EMITTER 3
MJH11018
MJH11020
MJH11022

MAXIMUM RATINGS
Rating

Symbol

CollectorEmitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021

VCEO

CollectorBase Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021

VCB

EmitterBase Voltage

VEB

5.0

Vdc

IC

15
30

Adc

Base Current

IB

0.5

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C

PD

150
1.2

W
W/_C

TJ, Tstg

65 to
+150

_C

Collector Current

Continuous
Peak (Note 1)

Operating and Storage Junction Temperature

Range

Max

Characteristic

EMITTER 3
MJH11017
MJH11019
MJH11021

Unit
Vdc

150
200
250

SOT93
(TO218)
CASE 340D
STYLE 1

Vdc

150
200
250

THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoCase

PNP
COLLECTOR 2

COLLECTOR 2

Symbol

Max

Unit

RqJC

0.83

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

3
TO247
CASE 340L
STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO247
package. Reference FPCN# 16827.

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012

July, 2012 Rev. 9

Publication Order Number:

MJH11017/D

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

MARKING DIAGRAMS
TO247

TO218

MJH110xx
AYWWG

1 BASE

AYWWG
MJH110xx

3 EMITTER

1 BASE

3 EMITTER
2 COLLECTOR

2 COLLECTOR
A
Y
WW
G
MJH110xx

=
=
=
=
=

Assembly Location
Year
Work Week
PbFree Package
Device Code
xx = 17, 19, 21, 18, 20, 22

ORDERING INFORMATION
Device Order Number

Package Type

Shipping

MJH11017G

TO218
(PbFree)

30 Units / Rail

MJH11018G

TO218
(PbFree)

30 Units / Rail

MJH11019G

TO218
(PbFree)

30 Units / Rail

MJH11020G

TO218
(PbFree)

30 Units / Rail

MJH11021G

TO218
(PbFree)

30 Units / Rail

MJH11022G

TO218
(PbFree)

30 Units / Rail

MJH11017G

TO247
(PbFree)

30 Units / Rail

MJH11018G

TO247
(PbFree)

30 Units / Rail

MJH11019G

TO247
(PbFree)

30 Units / Rail

MJH11020G

TO247
(PbFree)

30 Units / Rail

MJH11021G

TO247
(PbFree)

30 Units / Rail

MJH11022G

TO247
(PbFree)

30 Units / Rail

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

PD, POWER DISSIPATION (WATTS)

160
140
120
100
80
60
40
20
0
0

20

40

60
80
100
120
TC, CASE TEMPERATURE (C)

140

160

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

150
200
250

1.0
1.0
1.0

0.5
5.0

2.0

400
100

15,000

2.5
4.0

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 2)

(IC = 0.1 Adc, IB = 0)

MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022

Collector Cutoff Current

(VCE = 75 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
(VCE = 125 Vdc, IB = 0)

MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022

VCEO(sus)

ICEO

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)

ICEV

Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)

IEBO

Vdc

mAdc

mAdc

mAdc

ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)

VCE(sat)

Vdc

BaseEmitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)

VBE(on)

2.8

Vdc

BaseEmitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)

VBE(sat)

3.8

Vdc

fT

3.0

Cob

400
600

pF

hfe

75

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJH11018, MJH11020, MJH11022

MJH11017, MJH11019, MJH11021

SmallSignal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Typical

Characteristic

Delay Time
Rise Time

Storage Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 5.0 V) (See Figure 2)

Fall Time

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

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3

Symbol

NPN

PNP

Unit

td

150

75

ns

tr

1.2

0.5

ms

ts

4.4

2.7

ms

tf

2.5

2.5

ms

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

VCC
100 V
RC

SCOPE

TUT
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB 100 mA
MSD6100 used below IB 100 mA

V2
APPROX
+12 V
0
V1
APPROX
-8.0 V

tr, tf 10 ns
Duty Cycle = 1.0%

RB

51

D1
+4.0 V

25 ms

For td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit, reverse diode and voltage polarities.

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

Figure 2. Switching Times Test Circuit

1.0
0.7
0.5

D = 0.5

0.3

0.2

0.2
0.1
0.1
0.07
0.05

0.02

0.03

0.01
SINGLE PULSE

0.02
0.01
0.01

0.02 0.03

P(pk)

RqJC(t) = r(t) RqJC

RqJC = 0.83C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)

0.05

0.05

0.1

0.2 0.3

0.5

1.0

2.0 3.0 5.0

t, TIME (ms)

10

20

30

t1
t2
DUTY CYCLE, D = t1/t2
50

100

200 300

500

1000

Figure 3. Thermal Response

FORWARD BIAS
IC, COLLECTOR CURRENT (AMPS)

TC = 25C SINGLE PULSE

30
20
10

5.0
2.0

1.0
0.5
0.2
0

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

0.1 ms
0.5 ms
1.0 ms
5.0 ms
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
2.0 3.0 5.0 10
20 30 50
100 150 250
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 4. Maximum Rated Forward Bias

Safe Operating Area (FBSOA)

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

REVERSE BIAS

IC, COLLECTOR CURRENT (AMPS)

30

For inductive loads, high voltage and high current must be

sustained simultaneously during turnoff, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during
reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.

L = 200 mH
IC/IB1 50
TC = 100C
VBE(off) = 0-5.0 V
RBE = 47 W
DUTY CYCLE = 10%

20

10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0

0 20

140
60
100
180
220
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

260

Figure 5. Maximum Rated Reverse Bias

Safe Operating Area (RBSOA)

PNP
10,000
VCE = 5.0 V

3000
2000

TC = 150C

1000

25C

500
-55C

200
100

VCE = 5.0 V

5000
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

10,000
7000
5000

NPN

TC = 150C
2000
25C

1000
500

-55C
200
100

0.2

0.3

0.5 0.7

1.0

3.0

5.0

10

15

0.2

IC, COLLECTOR CURRENT (AMPS)

0.3

0.5 0.7 1.0

3.0

5.0 7.0

IC, COLLECTOR CURRENT (AMPS)

Figure 6. DC Current Gain

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5

10

15

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

NPN

4.5

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

PNP

TJ = 25C

4.0
3.5
3.0
2.5

IC = 15 A

2.0

IC = 10 A

1.5
1.0
1.0

IC = 5.0 A
2.0 3.0 5.0

10

20 30

50

100 200 300 500

1000

4.5
TJ = 25C

4.0
3.5
3.0

IC = 15 A
2.5
2.0

IC = 10 A

1.5
IC = 5.0 A
1.0
1.0

2.0 3.0 5.0

10

20 30

50

100 200 300 500 1000

IB, BASE CURRENT (mA)

IB, BASE CURRENT (mA)

Figure 7. Collector Saturation Region

PNP

NPN
4.0

4.0
3.5

3.5

TJ = 25C

VOLTAGE (VOLTS)

VOLTAGE (VOLTS)

3.0
2.5
VBE(sat) @ IC/IB = 100

2.0
1.5

TJ = 25C

3.0
2.5
VBE(sat) @ IC/IB = 100

2.0
1.5

VBE @ VCE = 5.0 V

VBE @ VCE = 5.0 V

1.0

1.0
VCE(sat) @ IC/IB = 100
0.5
0.2 0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10

0.5
0.2

20

VCE(sat) @ IC/IB = 100

0.5 0.7 1.0

2.0

5.0

10

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 8. On Voltages

PNP

NPN
MJH11017
MJH11019
MJH11021

MJH11018
MJH11020
MJH11022

COLLECTOR

BASE

COLLECTOR

BASE

EMITTER

EMITTER

Figure 9. Darlington Schematic

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20

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

PACKAGE DIMENSIONS
SOT93 (TO218)
CASE 340D02
ISSUE E

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

C
Q

DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V

J
H

MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF

STYLE 1:
PIN 1.
2.
3.
4.

V
G

INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069

BASE
COLLECTOR
EMITTER
COLLECTOR

TO247
CASE 340L02
ISSUE F
T

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

E
U

L
4

Q
1

0.63 (0.025)

P
Y
K

F 2 PL

D 3 PL
0.25 (0.010)

Y Q

T B

STYLE 3:
PIN 1.
2.
3.
4.

DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W

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7

MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
BASE
COLLECTOR
EMITTER
COLLECTOR

INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
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MJH11017/D