MJD112 (NPN)

MJD117 (PNP)
Preferred Device

Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters, SILICON
and power amplifiers.
POWER TRANSISTORS
Features 2 AMPERES
• Pb−Free Packages are Available 100 VOLTS
• Lead Formed for Surface Mount Applications in Plastic Sleeves 20 WATTS
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix) MARKING
• Lead Formed Version in 16 mm Tape and Reel DIAGRAMS
(“T4” and “RL” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series 4
DPAK YWW
CASE 369C J11x
MAXIMUM RATINGS 1 2
3
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 100 Vdc
4
Collector−Base Voltage VCB 100 Vdc
DPAK−3 YWW
Emitter−Base Voltage VEB 5 Vdc CASE 369D J11x
Collector Current − Continuous IC 2 Adc 1
Peak 4 2
3
Base Current IB 50 mAdc
Y = Year
Total Power Dissipation @ TC = 25°C PD 20 W
WW = Work Week
Derate above 25°C 0.16 W/°C
x = 2 or 7
Total Power Dissipation* @ TA = 25°C PD 1.75 W
Derate above 25°C 0.014 W/°C

Operating and Storage Junction Temperature TJ, Tstg −65 to °C ORDERING INFORMATION
Range + 150 See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits Preferred devices are recommended choices for future use
are exceeded, device functional operation is not implied, damage may occur and best overall value.
and reliability may be affected.

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 6.25 °C/W
Thermal Resistance, Junction−to−Ambient* RJA 71.4 °C/W
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.

 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

August, 2004 − Rev. 5 MJD112/D
 MJD112 (NPN) MJD117 (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (1) VCEO(sus) 100 − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 30 mAdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ÎÎÎ
ÎÎÎÎ
ÎÎÎ ICEO − 20
Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 50 Vdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICBO − 20
Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = 100 Vdc, IE = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current IEBO − 2 mAdc
(VBE = 5 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Cutoff Current (VCB = 80 Vdc, IE = 0)

ÎÎÎÎ
ÎÎÎ
ICBO − 10
Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 2 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain hFE −
(IC = 0.5 Adc, VCE = 3 Vdc) 500 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 2 Adc, VCE = 3 Vdc) 1000 12,000

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 4 Adc, VCE = 3 Vdc) 200 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 2 Adc, IB = 8 mAdc) − 2
(IC = 4 Adc, IB = 40 mAdc) − 3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VBE(sat) − 4 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Base−Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)

ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VBE(on) − 2.8 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current−Gain − Bandwidth Product fT 25 − MHz
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD117
Cob
− 200
pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
MJD112 − 100
1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ORDERING INFORMATION
Device Package Type Package Shipping†
MJD112 DPAK 369C 75 Units / Rail
MJD112−001 DPAK−3 369D 75 Units / Rail
MJD112RL DPAK 369C 1800 Tape & Reel
MJD112T4 DPAK 369C 2500 Tape & Reel
MJD112T4G DPAK 369C 2500 Tape & Reel
(Pb−Free)

MJD117 DPAK 369C 75 Units / Rail

MJD117G DPAK 369C 75 Units / Rail
(Pb−Free)

MJD117−001 DPAK−3 369D 75 Units / Rail

MJD117T4 DPAK 369C 2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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2
 MJD112 (NPN) MJD117 (PNP)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS VCC 4

D1, MUST BE FAST RECOVERY TYPE, e.g.: VCC = 30 V IB1 = IB2
−
30 V
ts IC/IB = 250 TJ = 25°C
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE 2
TUT
V2 RB

t, TIME (s)
tf

µ
APPROX 1
+
8 V
≈8k ≈ 60 0.8
0 51 D1 tr
0.6
V1
APPROX
+4V 0.4
−12 V 25
s td @ VBE(off) = 0 V
FOR td AND tr, D1 IS DISCONNECTED PNP
tr, tf ≤ 10 ns NPN
DUTY CYCLE = 1% AND V2 = 0 0.2
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4
IC, COLLECTOR CURRENT (AMP)

Figure 1. Switching Times Test Circuit Figure 2. Switching Times

1
THERMAL RESISTANCE (NORMALIZED)

0.7 D = 0.5
0.5
r(t), EFFECTIVE TRANSIENT

0.3 0.2
0.2 0.1 P(pk)
RJC(t) = r(t) RJC
0.05 RJC = 6.25°C/W
0.1
D CURVES APPLY FOR POWER
0.07 0.01 PULSE TRAIN SHOWN t1
0.05 READ TIME AT t1 t2
0.03 TJ(pk) − TC = P(pk) JC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.02

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)

Figure 3. Thermal Response

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 MJD112 (NPN) MJD117 (PNP)

ACTIVE−REGION SAFE−OPERATING AREA

TA TC
10 2.5 25
7
5
100
s
IC, COLLECTOR CURRENT (AMP)

PD, POWER DISSIPATION (WATTS)

3 500
s 2 20
2
1 1ms 5ms
0.7 1.5 15
0.5 dc
0.3 TC
0.2 BONDING WIRE LIMITED TA
1 10
0.1 THERMAL LIMIT SURFACE
SECOND BREAKDOWN LIMIT MOUNT
0.5 5
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
0 0
2 3 5 7 10 20 30 50 70 100 200 25 50 75 100 125 15
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) T, TEMPERATURE (°C)

Figure 4. Maximum Rated Forward Biased Figure 5. Power Derating

Safe Operating Area

There are two limitations on the power handling ability of 200

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE TC = 25°C
100
limits of the transistor that must be observed for reliable
C, CAPACITANCE (pF)

operation; i.e., the transistor must not be subjected to greater 70

dissipation than the curves indicate. 50
The data of Figures 5 and 6 is based on TJ(pk) = 150
C; Cob
TC is variable depending on conditions. Second breakdown
30
pulse limits are valid for duty cycles to 10% provided TJ(pk) Cib
< 150
C. TJ(pk) may be calculated from the data in 20
Figure 4. At high case temperatures, thermal limitations will PNP
reduce the power that can be handled to values less than the NPN
10
limitations imposed by second breakdown. 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 6 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance

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 MJD112 (NPN) MJD117 (PNP)

TYPICAL ELECTRICAL CHARACTERISTICS

NPN MJD112 PNP MJD117

6k 6k
TJ = 125°C VCE = 3 V TC = 125°C VCE = 3 V
4k 4k
3k 3k
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

25°C
2k 25°C 2k

1k 1k
800 800
−
55 °C −
55 °C
600 600

400 400
300 300
0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 7. DC Current Gain

3.4 3.4
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

TJ = 125°C TJ = 125°C
3 IC = 3
0.5 A IC = 1A 2A 4A
2.6 1A 2A 4A 2.6 0.5 A

2.2 2.2

1.8 1.8

1.4 1.4

1 1

0.6 0.6
0.1 0.2 0.5 1 2 5 10 20 50 100 0.1 0.2 0.5 1 2 5 10 20 50 100
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)

Figure 8. Collector Saturation Region

2.2 2.2
TJ = 25°C TJ = 25°C
1.8 1.8
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V 1.4 VBE(sat) @ IC/IB = 250
VBE @ VCE = 3 V

1 1
VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250
0.6 0.6

0.2 0.2
0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. “On Voltages

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5
 MJD112 (NPN) MJD117 (PNP)

NPN MJD112 PNP MJD117

+
0.8 +
0.8
θV, TEMPERATURE COEFFICIENTS (mV/°C)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

*APPLIED FOR IC/IB < hFE/3 *APPLIES FOR IC/IB < hFE/3
0 0
25°C TO 150°C
−
0.8 −
0.8
25°C TO 150°C
−
1.6 −
1.6 *VC FOR VCE(sat)
−
55 °C TO 25°C
−
2.4 *VC FOR VCE(sat) −
2.4
−
55 °C TO 25°C 25°C TO 150°C
−
3.2 25°C TO 150°C −
3.2
VC FOR VBE −
55 °C TO 25°C
VB FOR VBE
−
4 −
55 °C TO 25°C −
4

−
4.8 −
4.8
0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

105 105

REVERSE FORWARD REVERSE FORWARD

104 104
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

µ

103 VCE = 30 V 103 VCE = 30 V

102 102
TJ = 150°C TJ = 150°C
101 101
100°C
100 100°C 100 25°C
25°C
10−1 10−1
−
0.6 −
0.4 −
0.2 0 +
0.2 +
0.4 +
0.6 +
0.8 +
1 +
1.2 +
1.4 +
0.6 +
0.4 +
0.2 0 −
0.2 −
0.4 −
0.6 −
0.8 −
1 −
1.2 −
1.4
VBE, BASE−EMITTER VOLTAGE (VOLTS) VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 11. Collector Cut−Off Region

PNP COLLECTOR NPN COLLECTOR

BASE BASE

≈8k ≈ 120 ≈8k ≈ 120

EMITTER EMITTER

Figure 12. Darlington Schematic

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 MJD112 (NPN) MJD117 (PNP)

PACKAGE DIMENSIONS

DPAK
CASE 369C
ISSUE O

NOTES:
−T− SEATING
PLANE 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
B C 2. CONTROLLING DIMENSION: INCH.

V R E INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4
C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A E 0.018 0.023 0.46 0.58
S F 0.037 0.045 0.94 1.14
1 2 3
U G 0.180 BSC 4.58 BSC
K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
F L 0.090 BSC 2.29 BSC
J
R 0.180 0.215 4.57 5.45
L H S 0.025 0.040 0.63 1.01
U 0.020 −−− 0.51 −−−
D 2 PL V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
G 0.13 (0.005) M T

SOLDERING FOOTPRINT*

6.20 3.0
0.244 0.118
2.58
0.101

5.80 1.6 6.172

0.228 0.063 0.243

SCALE 3:1 inches

mm 

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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7
 MJD112 (NPN) MJD117 (PNP)

PACKAGE DIMENSIONS

DPAK−3
CASE 369D−01
ISSUE B

C NOTES:
B 1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V R E 2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3 D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
SEATING
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
J
F V 0.035 0.050 0.89 1.27
H Z 0.155 −−− 3.93 −−−
D 3 PL
G 0.13 (0.005) M T

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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8