MJE15032 (NPN),

MJE15033 (PNP)

Complementary Silicon
Plastic Power Transistors
Designed for use as high−frequency drivers in audio amplifiers.
Features http://onsemi.com
• High DC Current Gain
• High Current Gain − Bandwidth Product 8.0 AMPERES
• TO−220 Compact Package POWER TRANSISTORS
• Epoxy Meets UL 94 V−0 @ 0.125 in COMPLEMENTARY SILICON
• These Devices are Pb−Free and are RoHS Compliant*
250 VOLTS, 50 WATTS
MAXIMUM RATINGS COMPLEMENTARY
Rating Symbol Value Unit
COLLECTOR COLLECTOR
Collector−Emitter Voltage VCEO 250 Vdc 2, 4 2, 4
Collector−Base Voltage VCB 250 Vdc
Emitter−Base Voltage VEB 5.0 Vdc 1 1
Collector Current − Continuous IC 8.0 Adc BASE BASE

Collector Current − Peak ICM 16 Adc 3 3

Base Current IB 2.0 Adc EMITTER EMITTER

Total Power Dissipation PD

@ TC = 25_C 50 W MARKING
Derate above 25_C 0.40 W/_C DIAGRAM
Total Power Dissipation PD
@ TA = 25_C 2.0 W 4
Derate above 25_C 0.016 W/_C
Operating and Storage Junction TJ, Tstg – 65 to + 150 _C
Temperature Range MJE1503xG
TO−220 AYWW
ESD − Human Body Model HBM 3B V CASE 221A
ESD − Machine Model MM C V STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. 1
2
3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
MJE1503x = Specific Device Code
Thermal Resistance, RqJC _C/W x = 2 or 3
Junction−to−Case 2.5 A = Assembly Location
Y = Year
Thermal Resistance, RqJA _C/W
Junction−to−Ambient 62.5 WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

MJE15032G TO−220 50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques MJE15033G TO−220 50 Units/Rail
Reference Manual, SOLDERRM/D. (Pb−Free)

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

December, 2014 − Rev. 6 MJE15032/D
 MJE15032 (NPN), MJE15033 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc
(IC = 10 mAdc, IB = 0) 250 −

Collector Cutoff Current ICBO mAdc

(VCB = 250 Vdc, IE = 0) − 10

Emitter Cutoff Current IEBO mAdc

(VBE = 5.0 Vdc, IC = 0) − 10

ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 0.5 Adc, VCE = 5.0 Vdc) 70 −
(IC = 1.0 Adc, VCE = 5.0 Vdc) 50 −
(IC = 2.0 Adc, VCE = 5.0 Vdc) 10 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 1.0 Adc, IB = 0.1 Adc) − 0.5

Base−Emitter On Voltage VBE(on) Vdc

(IC = 1.0 Adc, VCE = 5.0 Vdc) − 1.0

DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2) fT MHz
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) 30 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = ⎪hfe⎪• ftest.

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 MJE15032 (NPN), MJE15033 (PNP)

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL

0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 2.5°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 1. Thermal Response

100 There are two limitations on the power handling ability of

a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMPS)

100 ms breakdown. Safe operating area curves indicate IC − VCE

10 limits of the transistor that must be observed for reliable
50ms
operation, i.e., the transistor must not be subjected to greater
250ms 10ms dissipation then the curves indicate.
1.0 The data of Figures 2 and 4 is based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
0.1 < 150_C. TJ(pk) may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
0.01 limitations imposed by second breakdown.
1.0 10 100 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. MJE15032 & MJE15033

Safe Operating Area

TA TC
PD, POWER DISSIPATION (WATTS)

3.0 60

2.0 40

TC

1.0 20 TA

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 3. Power Derating

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 MJE15032 (NPN), MJE15033 (PNP)

NPN − MJE15032 PNP − MJE15033

1000 1000

150°C 150°C
h FE, DC CURRENT GAIN

h FE, DC CURRENT GAIN

25°C
100 100
25°C
-55°C
-55°C

10 10

1.0 1.0
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 4. NPN − MJE15032 Figure 5. PNP − MJE15033

VCE = 5 V DC Current Gain VCE = 5 V DC Current Gain

10 10
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

1.0 -55°C 1.0 -55°C

25°C 25°C
150°C 150°C

0.1 0.1
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 6. NPN − MJE15032 Figure 7. PNP − MJE15033

VCE = 5 V VBE(on) Curve VCE = 5 V VBE(on) Curve

10 100

150°C
V, VOLTAGE (VOLTS)

10
V, VOLTAGE (VOLTS)

1.0 25°C

25°C
1.0
-55°C -55°C
0.1 150°C
0.1

0.01 0.01
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 8. NPN − MJE15032 Figure 9. PNP − MJE15033
VCE(sat) IC/IB = 10 VCE(sat) IC/IB = 10

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 MJE15032 (NPN), MJE15033 (PNP)

NPN − MJE15032 PNP − MJE15033

100 100

150°C
10 150°C 10 25°C
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)
-55°C

25°C
1.0 1.0
-55°C

0.1 0.1

0.01 0.01
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 10. NPN − MJE15032 Figure 11. PNP − MJE15033
VCE(sat) IC/IB = 20 VCE(sat) IC/IB = 20

10 10
V BE, BASE EMITTER VOLTAGE (VOLTS)

V BE, BASE EMITTER VOLTAGE (VOLTS)

1.0 -55°C 1.0 -55°C

25°C 25°C
150°C 150°C

0.1 0.1
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 12. NPN − MJE15032 Figure 13. PNP − MJE15033
VBE(sat) IC/IB = 10 VBE(sat) IC/IB = 10

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 MJE15032 (NPN), MJE15033 (PNP)

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
T S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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