MJ15023 (PNP),

MJ15025 (PNP)

Silicon Power Transistors

The MJ15023 and MJ15025 are power transistors designed for high
power audio, disk head positioners and other linear applications.

Features http://onsemi.com
• High Safe Operating Area
• High DC Current Gain 16 AMPERES
• Complementary to MJ15022 (NPN), MJ15024 (NPN) SILICON POWER TRANSISTORS
• These Devices are Pb−Free and are RoHS Compliant* 200 − 250 VOLTS, 250 WATTS
COLLECTOR
MAXIMUM RATINGS
CASE
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc
MJ15023 200 1
MJ15025 250 BASE
Collector−Base Voltage VCBO Vdc
MJ15023 350 2
MJ15025 400 EMITTER

Emitter−Base Voltage VEBO 5 Vdc

Collector−Emitter Voltage VCEX 400 Vdc CASE

Collector Current − Continuous (Note 1) IC 16 Adc

Collector Current − Peak (Note 1) ICM 30 Adc 2
1
Base Current − Continuous IB 5 Adc
TO−204 (TO−3)
Total Device Dissipation PD CASE 1−07
@ TC = 25_C 250 W STYLE 1
Derate above 25_C 1.43 W/_C
Operating and Storage Junction TJ, Tstg −65 to +200 _C MARKING DIAGRAM
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the MJ1502xG
Recommended Operating Conditions may affect device reliability. AYWW
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. MEX

THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
MJ1502x = Device Code
Thermal Resistance, Junction−to−Case RqJC 0.70 _C/W
x = 3 or 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin

ORDERING INFORMATION
Device Package Shipping
MJ15023G TO−204 100 Units / Tray
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
MJ15025G TO−204 100 Units / Tray
download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free)
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

August, 2013 − Rev. 12 MJ15023/D

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 MJ15023 (PNP), MJ15025 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) −
(IC = 100 mAdc, IB = 0)
MJ15023 200 −
MJ15025 250 −
Collector Cutoff Current ICEX mAdc
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
MJ15023 − 250
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
MJ15025 − 250
Collector Cutoff Current ICEO mAdc
(VCE = 150 Vdc, IB = 0)
MJ15023 − 500
(VCE = 200 Vdc, IB = 0)
MJ15025 − 500
Emitter Cutoff Current IEBO mAdc
(VCE = 5 Vdc, IB = 0)
Both − 500
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b Adc
(VCE = 50 Vdc, t = 0.5 s (non−repetitive)) 5 −
(VCE = 80 Vdc, t = 0.5 s (non−repetitive)) 2 −
ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 8 Adc, VCE = 4 Vdc) 15 60
(IC = 16 Adc, VCE = 4 Vdc) 5 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 8 Adc, IB = 0.8 Adc) − 1.4
(IC = 16 Adc, IB = 3.2 Adc) − 4.0
Base−Emitter On Voltage VBE(on) Vdc
(IC = 8 Adc, VCE = 4 Vdc) − 2.2
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) 4 −
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) − 600
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

100 There are two limitations on the powerhandling ability of

50 TC = 25°C a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMPS)

breakdown. Safe operating area curves indicate IC − VCE

20
limits of the transistor that must be observed for reliable
10 operation; i.e., the transistor must not be subjected to greater
5.0 dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
1.0 BONDING WIRE LIMITED temperatures, thermal limitations will reduce the power that
THERMAL LIMITATION can be handled to values less than the limitations imposed by
(SINGLE PULSE)
second breakdown.
0.2 SECOND BREAKDOWN LIMITED
0.1
0.1 0.2 0.5 10 20 50 100 250 500 1k
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area

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 MJ15023 (PNP), MJ15025 (PNP)

TYPICAL CHARACTERISTICS

f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

4000
3000 Cib 9 TJ = 25°C
VCE = 10 V
TJ = 25°C 8 fTest = 1 MHz
C, CAPACITANCE (pF)

7
1000
6
500 5
Cob
4
3
2
100
1
0
0.3 0.5 1.0 5.0 10 30 50 100 300 0.1 0.3 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS)

Figure 2. Capacitances Figure 3. Current−Gain − Bandwidth Product

200
TJ = 100°C VCE = 4.0 V 1.8
100
hFE, DC CURRENT GAIN

V, VOLTAGE (VOLTS)

50 TJ = 25°C 1.4

20 1.0 TJ = 25°C
0.8 VBE(on) @ VCE = 4.0 V
10

5.0 100°C
0.2 25°C VCE(sat) @ IC/IB = 10
2.0 100°C
0
0.2 0.5 1.0 2.0 5.0 10 20 0.1 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain Figure 5. “On” Voltages

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 MJ15023 (PNP), MJ15025 (PNP)

PACKAGE DIMENSIONS

TO−204 (TO−3)
CASE 1−07
ISSUE Z

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY.
PLANE
E
INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U
L −Y− E 0.055 0.070 1.40 1.77
V G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1 N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
−Q− V 0.131 0.188 3.33 4.77

0.13 (0.005) M T Y M STYLE 1:

PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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