PNP − MJ15023, MJ15025*

*MJ15025 is a Preferred Device

Silicon Power Transistors

The MJ15023 and MJ15025 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.

Features
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• High Safe Operating Area (100% Tested) −2 A @ 80 V
• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES
• Pb−Free Packages are Available* SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc
MJ15023 200
MJ15025 250
Collector−Base Voltage VCBO Vdc
MJ15023 350
MJ15025 400
Emitter−Base Voltage VEBO 5 Vdc TO−204AA (TO−3)
Collector−Emitter Voltage VCEX 400 Vdc CASE 1−07
STYLE 1
Collector Current − Continuous IC 16 Adc
− Peak (Note 1) 30

Base Current − Continuous IB 5 Adc MARKING DIAGRAM

Total Device Dissipation @ TC = 25_C PD 250 W

Derate above 25_C 1.43 W/_C
Operating and Storage Junction TJ, Tstg −65 to +200 _C
Temperature Range MJ1502xG
AYWW
THERMAL CHARACTERISTICS MEX
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.70 _C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not MJ1502x = Device Code
normal operating conditions) and are not valid simultaneously. If these limits are x = 3 or 5
exceeded, device functional operation is not implied, damage may occur and G = Pb−Free Package
reliability may be affected. A = Assembly Location
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. Y = Year
WW = Work Week
MEX = Country of Origin

ORDERING INFORMATION
Device Package Shipping
MJ15023 TO−204 100 Units / Tray
MJ15023G TO−204 100 Units / Tray
(Pb−Free)
MJ15025 TO−204 100 Units / Tray
MJ15025G TO−204 100 Units / Tray
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use
Reference Manual, SOLDERRM/D. and best overall value.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

February, 2006 − Rev. 10 MJ15023/D
 PNP − MJ15023, MJ15025*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 100 mAdc, IB = 0) MJ15023
MJ15025
VCEO(sus)
200 −
−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
250 −
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEX
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ15023 − 250

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15025 − 250

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 150 Vdc, IB = 0)
(VCE = 200 Vdc, IB = 0)
MJ15023
MJ15025
ICEO
−
−
500
500
mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IEBO − 500 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 5 Vdc, IB = 0) Both

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Second Breakdown Collector Current with Base Forward Biased IS/b Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 50 Vdc, t = 0.5 s (non−repetitive)) 5 −
(VCE = 80 Vdc, t = 0.5 s (non−repetitive))

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
DC Current Gain hFE −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 16 Adc, VCE = 4 Vdc)
15
5
60
−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 8 Adc, IB = 0.8 Adc) − 1.4
(IC = 16 Adc, IB = 3.2 Adc) − 4.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VBE(on) − 2.2 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product fT 4 − MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob − 600 pF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

100 There are two limitations on the powerhandling ability of

50 TC = 25°C a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMPS)

breakdown. Safe operating area curves indicate IC − VCE

20
limits of the transistor that must be observed for reliable
10 operation; i.e., the transistor must not be subjected to greater
5.0 dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
1.0 BONDING WIRE LIMITED temperatures, thermal limitations will reduce the power that
THERMAL LIMITATION can be handled to values less than the limitations imposed by
(SINGLE PULSE)
second breakdown.
0.2 SECOND BREAKDOWN LIMITED
0.1
0.1 0.2 0.5 10 20 50 100 250 500 1k
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area

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 PNP − MJ15023, MJ15025*

TYPICAL CHARACTERISTICS

f T, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

4000
3000 Cib 9 TJ = 25°C
VCE = 10 V
TJ = 25°C 8 fTest = 1 MHz
C, CAPACITANCE (pF)

7
1000
6
500 5
Cob
4
3
2
100
1
0
0.3 0.5 1.0 5.0 10 30 50 100 300 0.1 0.3 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS)

Figure 2. Capacitances Figure 3. Current−Gain — Bandwidth Product

200
TJ = 100°C VCE = 4.0 V 1.8
100
hFE, DC CURRENT GAIN

TJ = 25°C
V, VOLTAGE (VOLTS)

50 1.4

20 1.0 TJ = 25°C
0.8 VBE(on) @ VCE = 4.0 V
10

5.0 100°C
0.2 25°C VCE(sat) @ IC/IB = 10
2.0 100°C
0
0.2 0.5 1.0 2.0 5.0 10 20 0.1 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain Figure 5. “On” Voltages

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3
 PNP − MJ15023, MJ15025*

PACKAGE DIMENSIONS

TO−204 (TO−3)
CASE 1−07
ISSUE Z

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO−204AA OUTLINE SHALL APPLY.
PLANE
E
INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M
B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U E 0.055 0.070 1.40 1.77
L −Y−
V G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1 N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
−Q− V 0.131 0.188 3.33 4.77

0.13 (0.005) M T Y M STYLE 1:

PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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4