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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
2N5087

Amplifier Transistor
PNP Silicon

Features
• These are Pb−Free Devices* http://onsemi.com

3 COLLECTOR

MAXIMUM RATINGS 2
Rating Symbol Value Unit BASE

Collector−Emitter Voltage VCEO 50 Vdc

1 EMITTER
Collector−Base Voltage VCBO 50 Vdc
Emitter−Base Voltage VEBO 3.0 Vdc
Collector Current − Continuous IC 50 mAdc
TO−92
Total Device Dissipation @ TA = 25°C PD 625 mW CASE 29
Derate above 25°C 5.0 mW/°C STYLE 1
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C 12 mW/°C 12 1
2
3 3
Operating and Storage Junction TJ, Tstg −55 to +150 °C
STRAIGHT LEAD BENT LEAD
Temperature Range
BULK PACK TAPE & REEL
THERMAL CHARACTERISTICS AMMO PACK

Characteristic Symbol Max Unit

MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
2N
Stresses exceeding Maximum Ratings may damage the device. Maximum 5087
Ratings are stress ratings only. Functional operation above the Recommended AYWW G
Operating Conditions is not implied. Extended exposure to stresses above the G
Recommended Operating Conditions may affect device reliability.

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping†
2N5087G TO−92 5000 Units / Bulk
(Pb−Free)
2N5087RLRAG TO−92 2000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

April, 2013 − Rev. 5 2N5087/D
 2N5087

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 50 −

Collector−Base Breakdown Voltage V(BR)CBO Vdc

(IC = 100 mAdc, IE = 0) 50 −

Collector Cutoff Current ICBO nAdc

(VCB = 35 Vdc, IE = 0) − 50

Emitter Cutoff Current IEBO nAdc

(VEB = 3.0 Vdc, IC = 0) − 50

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 100 mAdc, VCE = 5.0 Vdc) 250 800
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 250 −
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1) 250 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) − 0.3

Base−Emitter On Voltage VBE(on) Vdc

(IC = 1.0 mAdc, VCE = 5.0 Vdc) − 0.85

SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) 40 −

Collector−Base Capacitance Ccb pF

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − 4.0
Small−Signal Current Gain hfe −
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 250 900

Noise Figure NF dB
(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 10 Hz/15.7 kHz) − 2.0
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz) − 2.0
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

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 2N5087

TYPICAL NOISE CHARACTERISTICS

(VCE = − 5.0 Vdc, TA = 25°C)

10 1.0
BANDWIDTH = 1.0 Hz 7.0 BANDWIDTH = 1.0 Hz
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 mA IC = 1.0 mA

In, NOISE CURRENT (pA)

en, NOISE VOLTAGE (nV)

3.0
5.0
2.0
30 mA 300 mA
3.0 1.0
100 mA 0.7 100 mA
300 mA 0.5
2.0 1.0 mA
0.3 30 mA
0.2
10 mA
1.0 0.1
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)

Figure 1. Noise Voltage Figure 2. Noise Current

1.0M 1.0M
500k BANDWIDTH = 1.0 Hz 500k BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

200k 200k
100k 100k
50k 50k
20k 20k
0.5 dB
10k 10k
0.5 dB
5.0k 1.0 dB 5.0k
2.0k 2.0k 1.0 dB
1.0k 2.0 dB 1.0k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz

1.0M
500k 10 Hz to 15.7 kHz
RS , SOURCE RESISTANCE (OHMS)

200k
100k
Noise Figure is Defined as:
50k
20k
10k
NF + 20 log10 ƪ en2 ) 4KTRS ) In 2RS2 1ń2
4KTRS
ƫ
0.5 dB
5.0k en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
2.0k 1.0 dB K = Boltzman’s Constant (1.38 x 10−23 j/°K)
1.0k T = Temperature of the Source Resistance (°K)
2.0 dB
500 RS = Source Resistance (Ohms)
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0k
IC, COLLECTOR CURRENT (mA)

Figure 5. Wideband

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 2N5087

TYPICAL STATIC CHARACTERISTICS

400
TJ = 125°C
h FE , DC CURRENT GAIN

25°C
200

-55°C
100
80

60 VCE = 1.0 V
VCE = 10 V
40
0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)

Figure 6. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0 100
TA = 25°C TA = 25°C IB = 400 mA
PULSE WIDTH = 300 ms
350 mA
IC, COLLECTOR CURRENT (mA)
0.8 80 DUTY CYCLE ≤ 2.0%
300 mA 250 mA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 mA

150 mA
0.4 40
100 mA

0.2 20 50 mA

0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Collector Saturation Region Figure 8. Collector Characteristics

1.4 1.6
θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C *APPLIES for IC/IB ≤ hFE/2

1.2
0.8
V, VOLTAGE (VOLTS)

1.0 *qVC for VCE(sat) 25°C to 125°C

0
0.8
VBE(sat) @ IC/IB = 10 - 55°C to 25°C

0.6 0.8
VBE(on) @ VCE = 1.0 V
25°C to 125°C
0.4
1.6
0.2 qVB for VBE - 55°C to 25°C
VCE(sat) @ IC/IB = 10
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages Figure 10. Temperature Coefficients

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 2N5087

TYPICAL DYNAMIC CHARACTERISTICS

500 1000
VCC = 3.0 V 700 VCC = - 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)

t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 - 50 - 70 -100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Turn−On Time Figure 12. Turn−Off Time

T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)

5.0 V
200

3.0

100 2.0 Cob

70

50 1.0
f,

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 13. Current−Gain — Bandwidth Product Figure 14. Capacitance

20 200
VCE = -10 Vdc VCE = 10 Vdc
hoe , OUTPUT ADMITTANCE (m mhos)

10 f = 1.0 kHz 100 f = 1.0 kHz

hie , INPUT IMPEDANCE (kΩ )

TA = 25°C TA = 25°C
7.0 70
5.0 50
3.0 30
2.0 20

1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 15. Input Impedance Figure 16. Output Admittance

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 2N5087

1.0
r(t) TRANSIENT THERMAL RESISTANCE 0.7
D = 0.5
0.5

0.3
0.2
0.2
(NORMALIZED)

0.1
0.1
FIGURE 19
0.07 0.05
DUTY CYCLE, D = t1/t2
0.05 P(pk) D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1 READ TIME AT t1 (SEE AN569)
0.02 0.01 ZqJA(t) = r(t) w RqJA
SINGLE PULSE t2 TJ(pk) - TA = P(pk) ZqJA(t)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
t, TIME (ms)

Figure 17. Thermal Response

400
10 ms The safe operating area curves indicate IC−VCE limits of
1.0 ms
the transistor that must be observed for reliable operation.
200
IC, COLLECTOR CURRENT (mA)

100 ms Collector load lines for specific circuits must fall below the
100 TC = 25°C limits indicated by the applicable curve.
1.0 s
dc The data of Figure 18 is based upon TJ(pk) = 150°C; TC or
60 TA = 25°C TA is variable depending upon conditions. Pulse curves are
40 dc valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 17. At high case
20 TJ = 150°C
or ambient temperatures, thermal limitations will reduce the
10 CURRENT LIMIT
power than can be handled to values less than the limitations
THERMAL LIMIT imposed by second breakdown.
6.0
SECOND BREAKDOWN LIMIT
4.0 DESIGN NOTE: USE OF THERMAL RESPONSE DATA
2.0 4.0 6.0 8.0 10 20 40
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by
the model as shown in Figure 19. Using the model and the
Figure 18. Active−Region Safe Operating Area
device thermal response the normalized effective transient
thermal resistance of Figure 17 was calculated for various
104 duty cycles.
VCC = 30 V To find ZqJA(t), multiply the value obtained from Figure
103 17 by the steady state value RqJA.
IC, COLLECTOR CURRENT (nA)

ICEO Example:
102 The 2N5087 is dissipating 2.0 watts peak under the follow-
ing conditions:
101 ICBO t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
AND Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the
100 ICEX @ VBE(off) = 3.0 V reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
10-1 DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
10-2
- 40 - 20 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 Note AN569/D, available from the Literature Distribution
TJ, JUNCTION TEMPERATURE (°C) Center or on our website at www.onsemi.com.

Figure 19. Typical Collector Leakage Current

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 2N5087

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

A B STRAIGHT LEAD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

A B BENT LEAD
NOTES:
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
AMMO PACK MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
P 4. LEAD DIMENSION IS UNCONTROLLED IN
T P AND BEYOND DIMENSION K MINIMUM.
SEATING
PLANE K MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19

X X D D 0.40 0.54
G 2.40 2.80
G J 0.39 0.50
J K 12.70 ---
N 2.04 2.66
V
C P 1.50 4.00
R 2.93 ---
SECTION X−X V 3.43 ---
1 N STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf . SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components
in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product
could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall
indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws
and is not for resale in any manner.

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