BYV32-200

Switch‐mode
Power Rectifier
Features and Benefits
• Low Forward Voltage
• Low Power Loss/High Efficiency www.onsemi.com
• High Surge Capacity
• 175°C Operating Junction Temperature ULTRAFAST RECTIFIER
• 16 A Total (8 A Per Diode Leg) 16 AMPERES, 200 VOLTS
• These Devices are Pb−Free and are RoHS Compliant* trr = 35 ns
Applications
• Power Supply − Output Rectification 1
• Power Management 2, 4

• Instrumentation 3

Mechanical Characteristics
MARKING
• Case: Epoxy, Molded
DIAGRAM
• Epoxy Meets UL 94 V−0 @ 0.125 in
4
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: TO−220 AYWW
260°C Max. for 10 Seconds CASE 221 BYV32-200G
• ESD Rating: Human Body Model 3B STYLE 6 AKA
Machine Model C 1
2
3

A = Assembly Location
Y = Year
WW = Work Week
BYV32−200 = Device Code
G = Pb−Free Package
AKA = Diode Polarity

ORDERING INFORMATION

Device Package Shipping

BYV32−200G TO−220 50 Units / Rail

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2014 − Rev. 5 BYV32−200/D
 BYV32−200

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current, TC = 156°C IF(AV) A
Per Leg 8.0
Total Device 16
Peak Rectified Forward Current (Square Wave, 20 kHz), IFM 16 A
TC = 154°C − Per Diode Leg
Nonrepetitive Peak Surge Current IFSM 100 A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature TJ, Tstg −65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS
Characteristic Conditions Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 3.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 60

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typical Max Unit
Instantaneous Forward Voltage (Note 1) vF V
(iF = 5.0 A, Tj = 100°C) − 0.74 0.85
(iF = 20 A, Tj = 25°C) − 1.01 1.15
Instantaneous Reverse Current (Note 1) iR mA
(Rated dc Voltage, Tj = 100°C) − 21 600
(Rated dc Voltage, Tj = 25°C) − 3.5 50
Maximum Reverse Recovery Time trr ns
(IF = 1.0 A, di/dt = 50 A/ms) − − 35
(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A) − − 25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%

www.onsemi.com
2
 BYV32−200

100 100

IF, INSTANTANEOUS FORWARD CURRENT (A)

70
175°C
50 100°C 25°C
10

30

20
1.0
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)

TJ = 175°C 100°C
10

7.0 0.1
25°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
5.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
3.0

2.0 800
400
200

IR, REVERSE CURRENT (m A)

80 TJ = 175°C
1.0 40
20
0.7 8.0
4.0 100°C
0.5 2.0
0.8
0.4 25°C
0.3 0.2
0.08
0.2 0.04
0.02
0 20 40 60 80 100 120 140 160 180 200
0.1 VR, REVERSE VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Figure 3. Typical Reverse Current, Per Leg*
vF, INSTANTANEOUS VOLTAGE (VOLTS)
* The curves shown are typical for the highest voltage device in the
Figure 1. Typical Forward Voltage, Per Leg voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.

20 20
IF(AV), AVERAGE FORWARD CURRENT (A)

RqJA = 16°C/W
IF(AV), AVERAGE FORWARD CURRENT (A)

18 18
RqJA = 60°C/W
16 16 (NO HEATSINK)
14 14
dc
12 12
10 10
8.0 dc 8.0 SQUARE WAVE
6.0 6.0
SQUARE WAVE dc
4.0 4.0
2.0 2.0 SQUARE WAVE
0 0
140 145 150 155 160 165 170 175 180 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Case, Per Leg Figure 5. Current Derating, Ambient, Per Leg

www.onsemi.com
3
 BYV32−200

24

PF(AV) , AVERAGE POWER DISSIPATION (WATTS)

22 TJ = 175°C
20 SQUARE WAVE
18
16 dc
14
12
10
8.0
6.0
4.0
2.0
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Power Dissipation, Per Leg

1000

300
C, CAPACITANCE (pF)

TJ = 25°C

100

30

10
1.0 10 100
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Typical Capacitance, Per Leg

100
50% Duty Cycle
20%
10 10%
5%
2%
1
R(t) (°C/W)

1%

0.1

Single Pulse
0.01

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 8. Thermal Response, Junction−to−Ambient

www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AJ
DATE 05 NOV 2019

SCALE 1:1

STYLE 1: STYLE 2: STYLE 3: STYLE 4:

PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2
3. EMITTER 3. COLLECTOR 3. GATE 3. GATE
4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2

STYLE 5: STYLE 6: STYLE 7: STYLE 8:

PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY
4. DRAIN 4. CATHODE 4. ANODE 4. ANODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12:

PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2
3. EMITTER 3. DRAIN 3. GATE 3. GATE
4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−220 PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: TECHNICAL SUPPORT
Email Requests to: orderlit@onsemi.com North American Technical Support: Europe, Middle East and Africa Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910
ON Semiconductor Website: www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative

◊ www.onsemi.com
1