Switch-mode

Schottky Power Rectifier

MBRF20200CTG
The Switch−mode Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as www.onsemi.com
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER
RECTIFIER
Features
20 AMPERES, 200 VOLTS
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop 1
• Matched Dual Die Construction 2
• High Junction Temperature Capability 3
• High dv/dt Capability
• Guardring for Stress Protection
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Electrically Isolated. No Isolation Hardware Required.
• These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics:
• Case: Epoxy, Molded 1
• Weight: 1.9 Grams (Approximately) 2
3
• Finish: All External Surfaces Corrosion Resistant and Terminal TO−220 FULLPAKt
Leads are Readily Solderable CASE 221D
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds MARKING DIAGRAM

AYWW
B20200G
AKA

A = Assembly Location
Y = Year
WW = Work Week
B20200 = Device Code
G = Pb−Free Package
AKA = Polarity Designator

ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please Device Package Shipping
download the ON Semiconductor Soldering and Mounting Techniques MBRF20200CTG TO−220 50 Units/Rail
Reference Manual, SOLDERRM/D.
(Pb−Free)

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

July, 2020 − Rev. 9 MBRF20200CT/D
 MBRF20200CTG

MAXIMUM RATINGS (Per Leg)

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current Per Leg IF(AV) 10 A
(Rated VR) TC = 125°C Per Package 20
Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz) TC = 90°C IFRM 20 A
Nonrepetitive Peak Surge Current IFSM 150 A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A
Operating Junction Temperature and Storage Temperature TJ, Tstg −65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Per Leg)
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case RqJC 3.5 °C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Rating Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 1) vF V
(iF = 10 Amp, TC = 25°C) 0.9
(iF = 10 Amp, TC = 125°C) 0.8
(iF = 20 Amp, TC = 25°C) 1.0
(iF = 20 Amp, TC = 125°C) 0.9
Maximum Instantaneous Reverse Current (Note 1) iR mA
(Rated dc Voltage, TC = 25°C) 1.0
(Rated dc Voltage, TC = 125°C) 50
DYNAMIC CHARACTERISTICS (Per Leg)
Capacitance (VR = − 5.0 V, TC = 25°C, Freq. = 1.0 MHz) CT 500 pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%

100 10,000

70 TJ = 1505C

1,000
50
TJ = 1255C
IF, INSTANEOUS FORWARD CURRENT (AMP)

IR , REVERSE CURRENT ( μ A)

TJ = 150°C 100
TJ = 1005C

20 10

TJ = 125°C
1
10

7
0.1
TJ = 100°C TJ = 255C
5

0.01
0 20 40 60 80 100 120 140 160 180 200
TJ = 25°C VR, REVERSE CURRENT (VOLTS)
2
Figure 2. Typical Reverse Current (Per Leg)

1
0.2 0.4 0.6 0.8 1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage (Per Leg)

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 MBRF20200CTG

TEST CONDITION FOR ISOLATION TEST*

FULLY ISOLATED PACKAGE

LEADS

HEATSINK

0.110, MIN

Figure 3. Mounting Position

*Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION

CLIP

HEATSIN-
K

Clip−Mounted

Figure 4. Typical Mounting Technique

FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−220 FULLPAK
CASE 221D−03
ISSUE K
DATE 27 FEB 2009

NOTES:
−T− SEATING
PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−B− C 2. CONTROLLING DIMENSION: INCH
F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW
S STANDARD 221D-03.

Q U INCHES MILLIMETERS
SCALE 1:1 DIM MIN MAX MIN MAX
A A 0.617 0.635 15.67 16.12
B 0.392 0.419 9.96 10.63
1 2 3 C 0.177 0.193 4.50 4.90
D 0.024 0.039 0.60 1.00
H F 0.116 0.129 2.95 3.28
K −Y− G 0.100 BSC 2.54 BSC
H 0.118 0.135 3.00 3.43
J 0.018 0.025 0.45 0.63
K 0.503 0.541 12.78 13.73
G J L 0.048 0.058 1.23 1.47
N 0.200 BSC 5.08 BSC
N R Q 0.122 0.138 3.10 3.50
L R 0.099 0.117 2.51 2.96
S 0.092 0.113 2.34 2.87
D 3 PL U 0.239 0.271 6.06 6.88

0.25 (0.010) M B M Y
MARKING
DIAGRAMS

STYLE 1: STYLE 2: STYLE 3:

PIN 1. GATE PIN 1. BASE PIN 1. ANODE
2. DRAIN 2. COLLECTOR 2. CATHODE
3. SOURCE 3. EMITTER 3. ANODE

STYLE 4: STYLE 5: STYLE 6: xxxxxxG AYWW

PIN 1. CATHODE PIN 1. CATHODE PIN 1. MT 1
AYWW xxxxxxG
2. ANODE 2. MT 2
2. ANODE
3. CATHODE 3. GATE 3. GATE AKA

Bipolar Rectifier

xxxxxx = Specific Device Code A = Assembly Location

G = Pb−Free Package Y = Year
A = Assembly Location WW = Work Week
Y = Year xxxxxx = Device Code
WW = Work Week G = Pb−Free Package
AKA = Polarity Designator

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42514B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−220 FULLPAK PAGE 1 OF 1

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