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Schottky Rectifier SS32 - S310: Description

SS39_D-2320135

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0% found this document useful (0 votes)
65 views6 pages

Schottky Rectifier SS32 - S310: Description

SS39_D-2320135

Uploaded by

Connor Thirsk
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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DATA SHEET

www.onsemi.com

Schottky Rectifier
SS32 - S310 1
Cathode
2
Anode

Description
The SS32−S310 series includes a high−efficiency, low power loss,
general−propose Schottky rectifiers. The clipbonded leg structure
provides high thermal performance and low electrical resistance.
These rectifiers are suited for free wheeling, secondary rectification,
and reverse polarity protection applications. SMC
CASE 403AG
Features
• Metal to Silicon Rectifiers, Majority Carrier Conduction
• Low−Forward Voltage Drop MARKING DIAGRAM
• Easy Pick and Place
• High−Surge Current Capability $Y&Z&3
• This Device is Pb−Free and Halide Free Sxyz
G

$Y = Logo
&Z = Assembly Plant Code
&3 = Date Code
Sxyz = Specific Device Code
x = S or 3
y = 1 or 3
z = 0 or 2−9

ORDERING INFORMATION
Device Package Shipping†
SS32 SMC 3000 /
SS33 (Pb−Free, Tape & Reel
SS34 Halide−Free)
SS35
SS36
SS38
SS39
S310
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 1999 1 Publication Order Number:


August, 2021 − Rev. 5 SS39/D
SS32 − S310

ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted.


Value
Symbol Parameter SS32 SS33 SS34 SS35 SS36 SS38 SS39 S310 Units
VRRM Maximum Repetitive Reverse Voltage 20 30 40 50 60 80 90 100 V
IF(AV) Maximum Average Forward Current 3.0 A
at TA = 75°C

IFSM Non−Repetitive Peak Forward Surge Current: 100 A


8.3 ms Single Half−Sine Wave

dV/dt Maximum Voltage Rate of Change 10000 V/mS


TSTG Storage Temperature Range −55 to +150 °C
TJ Operating Junction Temperature −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
PD Power Dissipation 2.27 W
RθJA Thermal Resistance, Junction to Ambient (Note 1) 55 °C/W
RθJL Thermal Resistance, Junction to Lead 17 °C/W
1. Device mounted on FE−4 PCB 0.55 x 0.55 inch (14 x 14 mm).

ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted.


Value
Symbol Parameter Test Conditions SS32 SS33 SS34 SS35 SS36 SS38 SS39 S310 Units
VF Forwarded Voltage IF = 3.0 A 500 750 850 mV
IR Reverse Current at Rated VR TA = 25°C 0.5 mA
TA = 100°C 20 10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS

3 100
IF, Average Rectified Forward

IFSM, Peak Forward Surge

80

2
Current (A)
Current (A)

60

40
1 Resistive or Inductive
Load P.C.B. Mounted
on 0.55 x 0.55’’ 20
(14 x 14) mm
Copper Pad Areas
0 0
0 25 50 75 100 125 150 175 1 2 5 10 20 50 100
Ambient Temperature (5C) Number of Cycles at 60 Hz

Figure 1. Forward Current Derating Curve Figure 2. Non−Repetitive Surge Current

www.onsemi.com
2
SS32 − S310

TYPICAL CHARACTERISTICS

50 20
TA = 125°C 10
TA = 25°C SS32−SS34
10 SS32−SS34

IR, Reverse Current (mA)


IF, Forward Current (A)

TA = 125°C
1 SS35−S310
SS35−S310
1
0.1
TA = 75°C
SS32−SS34
TA = 150°C
0.1
0.01
Pulse Width = 300 ms SS35−S310 TA = 25°C
2% Duty Cycle
0.01 0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140
VF, Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%)

Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs. Reverse Voltage
1000 100

Transient Thermal Impedance (5C/W)


SS32−SS34
CT, Total Capacitance (pF)

10
SS35−S310
100

10 0.1
0.1 1 10 100 0.01 0.1 1 10 100
VR, Reverse Voltage (V) Pulse Duration (s)

Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics

www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SMC
CASE 403AG
ISSUE O
DATE 31 AUG 2016

8.15
B 7.75

1.96

6.25 3.27
5.55 2.75 B 3.39

6.81

A 7.15 0.13 M C B A LAND PATTERN RECOMMENDATION


6.60
TOP VIEW 8°
R0.15 0°
2.45 A 4X
1.90 2.65 MAX
GAGE
C PLANE 0.41
0.15
SEATING
PLANE
0.203
0.30 B
4.70 0.050
0.05 8°
4.40 0.45
0.13 M C B A 1.60 0°
0.75
SIDE VIEW
DETAIL A
NOTES: SCALE 2:1

A. EXCEPT WHERE NOTED, CONFORMS TO


JEDEC DO−214, VARIATION AB

B DOES NOT COMPLY TO JEDEC STD. VALUE


C. ALL DIMENSIONS ARE IN MILLIMETERS
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR PROTRUSIONS.
E. DIMENSIONS AND TOLERANCING AS PER
ASME Y14.5−2009
F. LAND PATTERN STANDARD: DIOM7957X241M

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13442G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SMC PAGE 1 OF 1

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