MBR4045PT

SWITCHMODE™
Power Rectifier
Features and Benefits
• Low Forward Voltage
• Low Power Loss/High Efficiency http://onsemi.com

• High Surge Capacity

• 175°C Operating Junction Temperature SCHOTTKY BARRIER
• 40 A Total (20 A Per Diode Leg) RECTIFIER
• Pb−Free Package is Available* 40 AMPERES
Applications 45 VOLTS
• Power Supply − Output Rectification
• Power Management 1
• Instrumentation 2,4
3
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal SOT−93
Leads are Readily Solderable CASE 340D
• Lead Temperatures for Soldering Purposes: 260°C Max. for 10 STYLE 2
Seconds
• ESD Rating: Human Body Model 3B
Machine Model C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques MARKING DIAGRAM
Reference Manual, SOLDERRM/D.

AYWWG
B4045

B4045 = Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping†

MBR4045PT SOT−93 30 Units/Rail

MBR4045PTG SOT−93 30 Units/Rail

(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

August, 2006 − Rev. 7 MBR4045PT/D
 MBR4045PT

MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage VRRM 45 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current IF(AV) A
(Rated VR, TC = 125°C) Per Diode 20
Per Device 40
Peak Repetitive Forward Current, IFRM 40 A
(Rated VR, Square Wave, 20 kHz
@ TC = 90°C) Per Diode
Non−Repetitive Peak Surge Current IFSM 400 A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase,
60 Hz)
Peak Repetitive Reverse Current, IRRM 2.0 A
(2.0 ms, 1.0 kHz)
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ −65 to +175 °C
Peak Surge Junction Temperature TJ(pk) 175 °C
(Forward Current Applied)
Voltage Rate of Change dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS
Characteristic Conditions Symbol Max Unit
Maximum Thermal Resistance, Junction−to−Case Minimum Pad RqJC 1.4
°C/W
Maximum Thermal Resistance, Junction−to−Ambient Minimum Pad RqJA 55

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Instantaneous Forward Voltage (Note 2) VF V
(iF = 20 A, TJ = 25°C) − 0.53 0.70
(iF = 20 A, TJ = 125°C) − 0.46 0.60
(iF = 40 A, TJ = 25°C) − 0.64 0.80
(iF = 40 A, TJ = 125°C) − 0.62 0.75
Instantaneous Reverse Current (Note 2) iR mA
(Rated DC Voltage, TJ = 25°C) − 0.09 1.0
(Rated DC Voltage, TJ = 125°C) − 30 50

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2
 MBR4045PT

TYPICAL ELECTRICAL CHARACTERISTICS

100 100
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)

TC = 150°C

I R, REVERSE CURRENT (mA)

10

TC = 100°C
10 1
TC = 150°C

0.1
TC = 25°C

TC = 100°C TC = 25°C
1 0.01
100 200 300 400 500 600 700 800 0 10 20 30 40 50
vF, INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current

I F(AV), AVERAGE FORWARD CURRENT (AMPS)

10000 30

25
C, CAPACITANCE (pF)

20

1000 15
DC
10 SQUARE WAVE
(VR = 45 V)

100 0
1 10 100 100 110 120 130 140 150 160
VR, REVERSE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

Figure 3. Typical Capacitance Per Leg Figure 4. Current Derating Per Leg

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

http://onsemi.com
3
 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT−93 (TO−218)
CASE 340D−02
ISSUE E
DATE 03 JAN 2002

C
NOTES:
B Q E 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS INCHES
U 4
DIM MIN MAX MIN MAX
A A --- 20.35 --- 0.801
S L B 14.70 15.20 0.579 0.598
SCALE 1:1 C 4.70 4.90 0.185 0.193
1 2 3 D 1.10 1.30 0.043 0.051
K E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
D J U 4.00 REF 0.157 REF
H V 1.75 REF 0.069

V
GENERIC
G
MARKING DIAGRAM*

STYLE 1: STYLE 2:
PIN 1. BASE PIN 1. ANODE
2. COLLECTOR 2. CATHODE
3. EMITTER 3. ANODE AYWW
4. COLLECTOR 4. CATHODE XXXXX

A = Assembly Location
Y = Year
WW = Work Week
XXXXX = Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42643B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SOT−93 (TO−218) PAGE 1 OF 1

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