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2N5486

JFET VHF/UHF Amplifiers

N−Channel — Depletion

Features
• Pb−Free Packages are Available* http://onsemi.com

1 DRAIN
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit 3
Drain −Gate Voltage VDG 25 Vdc GATE

Reverse Gate −Source Voltage VGSR 25 Vdc

Drain Current ID 30 mAdc 2 SOURCE

Forward Gate Current IG(f) 10 mAdc

Total Device Dissipation @ TC = 25°C PD 350 mW
Derate above 25°C 2.8 mW/°C

Operating and Storage Junction TJ, Tstg −65 to +150 °C

Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum TO−92 (TO−226AA)
Ratings are stress ratings only. Functional operation above the Recommended CASE 29−11
Operating Conditions is not implied. Extended exposure to stresses above the STYLE 5
Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAM

2N
5486
AYWWG
G

2N5486 = Device Code

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping
2N5486 TO−92 1000 Units / Bulk
2N5486G TO−92 1000 Units / Bulk
(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

October, 2006 − Rev. 2 2N5486/D
 2N5486

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) V(BR)GSS −25 − − Vdc
Gate Reverse Current (VGS = −20 Vdc, VDS = 0) IGSS − − −1.0 nAdc
(VGS = −20 Vdc, VDS = 0, TA = 100°C) − − −0.2 mAdc
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) −2.0 − −6.0 Vdc
ON CHARACTERISTICS
Zero−Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 8.0 − 20 mAdc
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) ⎪yfs⎪ 4000 − 8000 mmhos
Input Admittance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yis) − − 1000 mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) ⎪yos⎪ − − 75 mmhos
Output Conductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yos) − − 100 mmhos
Forward Transconductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yfs) 3500 − − mmhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − − 5.0 pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − − 1.0 pF
Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss − − 2.0 pF

COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS

(VDS = 15 Vdc, Tchannel = 25°C)
30 5.0
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)

20 3.0
bis, INPUT SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)

2.0
10 bis @ IDSS
brs @ IDSS
7.0 1.0
5.0
0.7
0.25 IDSS
3.0 gis @ IDSS 0.5
2.0 0.3
gis @ 0.25 IDSS
0.2
1.0
0.7
0.1
0.5 grs @ IDSS, 0.25 IDSS
bis @ 0.25 IDSS 0.07
0.3 0.05
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)

20 10
|b fs|, FORWARD SUSCEPTANCE (mmhos)

5.0
bos, OUTPUT SUSCEPTANCE (mhos)
gos, OUTPUT ADMITTANCE (mhos)

10
7.0 gfs @ IDSS 2.0 bos @ IDSS and 0.25 IDSS
5.0
1.0
3.0 gfs @ 0.25 IDSS
0.5
2.0
0.2 gos @ IDSS
1.0 |bfs| @ IDSS 0.1
0.7
0.5 0.05
|bfs| @ 0.25 IDSS
gos @ 0.25 IDSS
0.3 0.02
0.2 0.01
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos)

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 2N5486

COMMON SOURCE CHARACTERISTICS

S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
100 ID = 0.25 IDSS
40° 1.0 320° 40° 0.4 320°
100 200
200 300
0.9 0.3
50° 400 310° 50° ID = IDSS, 0.25 IDSS 310°
300 900
0.8 500 800 0.2
ID = IDSS
60° 400 300° 60° 300°
700
600 600

70° 0.7 500 290° 70° 500 0.1 290°

700 400
600
80° 280° 80° 300 280°
0.6 700 800 0.0
800 200
90° 900 270° 90° 270°
900 100

100° 260° 100° 260°

110° 250° 110° 250°

120° 240° 120° 240°

130° 230° 130° 230°

140° 220° 140° 220°

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 5. S11s Figure 6. S12s

30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
100 200
300 ID = 0.25 IDSS
40° 320° 40° 1.0 320°
100 200 400
500
300 600
400
0.6 0.9 500 700
50° 310° 50° 600 800 310°
ID = IDSS 700
800 900
0.5 0.8 900
60° 300° 60° 300°

900 0.4 0.7

70° 290° 70° 290°
800
900
80° 700 800 280° 80° 280°
0.3 0.6
700 ID = 0.25 IDSS
90° 600 270° 90° 270°
600
500 500 0.3
100° 260° 100° 260°
400 100
400
110° 300 200 250° 110° 250°
0.4
300
120° 240° 120° 240°
ID = IDSS 200 0.5
100

130° 230° 130° 230°

0.6

140° 220° 140° 220°

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 7. S21s Figure 8. S22s

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 2N5486

COMMON GATE CHARACTERISTICS

ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)

0.5

grg , REVERSE TRANSADMITTANCE (mmhos)

20

brg , REVERSE SUSCEPTANCE (mmhos)

0.3
big, INPUT SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)

10
0.2 brg @ IDSS
7.0 gig @ IDSS
5.0
0.1
3.0 grg @ 0.25 IDSS 0.07
2.0 0.05
0.03 0.25 IDSS
1.0
0.02
0.7
0.5 big @ IDSS
big @ 0.25 IDSS 0.01 gig @ IDSS, 0.25 IDSS
0.3 0.007
0.2 0.005
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)

10 1.0
bfg , FORWARD SUSCEPTANCE (mmhos)

gfg @ IDSS
bog, OUTPUT SUSCEPTANCE (mmhos)

7.0 0.7 bog @ IDSS, 0.25 IDSS

gog, OUTPUT ADMITTANCE (mmhos)

5.0 0.5
3.0 gfg @ 0.25 IDSS 0.3
2.0 0.2

1.0 0.1
0.7 0.07
0.5 0.05 gog @ IDSS
bfg @ IDSS
0.3 0.03
0.2 brg @ 0.25 IDSS 0.02
gog @ 0.25 IDSS
0.1 0.01
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog)

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 2N5486

COMMON GATE CHARACTERISTICS

S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)

30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°

40° 0.7 320° 40° 0.04 320°

ID = 0.25 IDSS
100 200
300
0.6 400 0.03
50° 100 500 310° 50° 310°
200
300 600
0.5 0.02
400 700
60° 300° 60° 300°
500
ID = IDSS 800
0.4 600 0.01
70° 290° 70° 290°
900
700
80° 280° 80° 280°
0.3 800 0.0
100
90° 900 270° 90° 270°
500
600
100° 260° 100° 600 ID = 0.25 IDSS 260°
ID = IDSS
110° 250° 110° 700 250°
700 0.01
800
120° 240° 120° 800 240°
0.02
900
130° 230° 130° 230°
900 0.03

140° 220° 140° 0.04 220°

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 13. S11g Figure 14. S12g

30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
1.5 300
40° 0.5 320° 40° 1.0 500 320°
200
400 700
100 600
100
0.4 0.9 800 900
50° ID = IDSS 310° 50° 310°
100 ID = IDSS, 0.25 IDSS

0.3 0.8
60° 300° 60° 300°

0.2 0.7
70° ID = 0.25 IDSS 290° 70° 290°

80° 280° 80° 280°

0.1 0.6
900
90° 270° 90° 270°
900
100° 260° 100° 260°

110° 250° 110° 250°

120° 240° 120° 240°

130° 230° 130° 230°

140° 220° 140° 220°

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 15. S21g Figure 16. S22g

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 2N5486

PACKAGE DIMENSIONS

TO−92 (TO−226AA)
CASE 29−11
ISSUE AL

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J J 0.015 0.020 0.39 0.50
H K 0.500 −−− 12.70 −−−
V L 0.250 −−− 6.35 −−−
C N 0.080 0.105 2.04 2.66
SECTION X−X P −−− 0.100 −−− 2.54
1 R 0.115 −−− 2.93 −−−
N
V 0.135 −−− 3.43 −−−
N STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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