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BC637, BC639, BC639-16

High Current Transistors

NPN Silicon

Features
• These are Pb−Free Devices* http://onsemi.com

COLLECTOR
2

MAXIMUM RATINGS
3
Rating Symbol Value Unit BASE
Collector - Emitter Voltage VCEO Vdc
BC637 60
BC639 80 1
EMITTER
Collector - Base Voltage VCBO Vdc
BC637 60
BC639 80
Emitter - Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC 1.0 Adc
TO−92
Total Device Dissipation @ TA = 25°C PD 625 mW CASE 29
Derate above 25°C 5.0 mW/°C STYLE 14
Total Device Dissipation @ TC = 25°C PD 800 mW
Derate above 25°C 12 mW/°C 12 1
2
3 3
Operating and Storage Junction TJ, Tstg −55 to +150 °C
STRAIGHT LEAD BENT LEAD
Temperature Range
BULK PACK TAPE & REEL
THERMAL CHARACTERISTICS AMMO PACK

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
MARKING DIAGRAMS
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC BC63
63x 9−16
AYWW G AYWW G
G G

x = 7 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

*For additional information on our Pb−Free strategy and soldering details, please ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package
Reference Manual, SOLDERRM/D. dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

February, 2011 − Rev. 1 BC637/D
 BC637, BC639, BC639−16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) BC637 60 − −
BC639 80 − −
Collector − Emitter Zero−Gate Breakdown Voltage(Note 1) V(BR)CES Vdc
(IC = 100 mAdc, IB = 0) BC639−16 120 − −

Collector − Base Breakdown Voltage V(BR)CBO Vdc

(IC = 100 mAdc, IE = 0) BC637 60 − −
BC639 80 − −
Emitter − Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 30 Vdc, IE = 0) − − 100 nAdc
(VCB = 30 Vdc, IE = 0, TA = 125°C) − − 10 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 5.0 mAdc, VCE = 2.0 Vdc) 25 − −
(IC = 150 mAdc, VCE = 2.0 Vdc) BC637 40 − 160
BC639 40 − 160
BC639−16ZLT1 100 − 250
(IC = 500 mA, VCE = 2.0 V) 25 − −

Collector − Emitter Saturation Voltage VCE(sat) Vdc

(IC = 500 mAdc, IB = 50 mAdc) − − 0.5

Base − Emitter On Voltage VBE(on) Vdc

(IC = 500 mAdc, VCE = 2.0 Vdc) − − 1.0

DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product fT MHz
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) − 200 −

Output Capacitance Cob pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 7.0 −

Input Capacitance Cib pF

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 50 −
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.

ORDERING INFORMATION
Device Package Shipping†
BC637G TO−92 5000 Units / Bulk
(Pb−Free)

BC637RL1G TO−92 2000 / Tape & Reel

(Pb−Free)

BC639G TO−92 5000 Units / Bulk

(Pb−Free)

BC639RL1G TO−92 2000 / Tape & Reel

(Pb−Free)

BC639ZL1G TO−92 2000 / Ammo Box

(Pb−Free)

BC639−16ZL1G TO−92 2000 / Ammo Box

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

http://onsemi.com
2
 BC637, BC639, BC639−16

1000 500
500 VCE = 2 V
SOA = 1S
IC, COLLECTOR CURRENT (mA)

200 PD TA 25°C

hFE, DC CURRENT GAIN

200
100

50 PD TC 25°C
100
20
10
50
5
BC635
PD TA 25°C
2 BC637
PD TC 25°C
BC639
1 20
1 2 3 4 5 7 10 20 30 40 50 70 100 1 3 5 10 30 50 100 300 500 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain

T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

500 1

300
0.8 VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
VBE(on) @ VCE = 2 V
0.6
VCE = 2 V
100
0.4

50
0.2

VCE(sat) @ IC/IB = 10
20 0
f,

1 10 100 1000 1 10 100 1000

IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Current−Gain — Bandwidth Product Figure 4. “Saturation” and “On” Voltages

-0.2
θV, TEMPERATURE COEFFICIENTS (mV/°C)

-1.0

VCE = 2 VOLTS
DT = 0°C to +100°C
-1.6

qV for VBE

-2.2
1 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

http://onsemi.com
3
 BC637, BC639, BC639−16

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

NOTES:
A B BENT LEAD
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE K MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19

X X D D 0.40 0.54
G 2.40 2.80
G J 0.39 0.50
J K 12.70 ---
N 2.04 2.66
V
C P 1.50 4.00
R 2.93 ---
SECTION X−X V 3.43 ---
1 N STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative

http://onsemi.com BC637/D
4