BC337, BC337-25,

BC337-40

Amplifier Transistors
NPN Silicon

Features http://onsemi.com

• These are Pb−Free Devices

COLLECTOR
1

MAXIMUM RATINGS 2
BASE
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 45 Vdc 3
Collector − Base Voltage VCBO 50 Vdc EMITTER

Emitter − Base Voltage VEBO 5.0 Vdc

Collector Current − Continuous IC 800 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
TO−92
Total Device Dissipation @ TC = 25°C PD 1.5 W CASE 29
Derate above 25°C 12 mW/°C STYLE 17

Operating and Storage Junction TJ, Tstg −55 to +150 °C

Temperature Range 12 1
2
3 3
THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
Characteristic Symbol Max Unit
AMMO PACK
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the MARKING DIAGRAM
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

BC33
7−xx
AYWW G
G

BC337−xx = Device Code

(Refer to page 4)
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques ORDERING INFORMATION
Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

November, 2013 − Rev. 8 BC337/D
 BC337, BC337−25, BC337−40

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO 45 − − Vdc
(IC = 10 mA, IB = 0)

Collector −Emitter Breakdown Voltage V(BR)CES 50 − − Vdc

(IC = 100 mA, IE = 0)
Emitter −Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc
(IE = 10 mA, IC = 0)
Collector Cutoff Current ICBO − − 100 nAdc
(VCB = 30 V, IE = 0)

Collector Cutoff Current ICES − − 100 nAdc

(VCE = 45 V, VBE = 0)

Emitter Cutoff Current IEBO − − 100 nAdc

(VEB = 4.0 V, IC = 0)

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 100 mA, VCE = 1.0 V) BC337 100 − 630
BC337−25 160 − 400
BC337−40 250 − 630
(IC = 300 mA, VCE = 1.0 V)
60 − −
Base−Emitter On Voltage VBE(on) − − 1.2 Vdc
(IC = 300 mA, VCE = 1.0 V)

Collector −Emitter Saturation Voltage VCE(sat) − − 0.7 Vdc

(IC = 500 mA, IB = 50 mA)

SMALL−SIGNAL CHARACTERISTICS
Output Capacitance Cob − 15 − pF
(VCB = 10 V, IE = 0, f = 1.0 MHz)

Current −Gain − Bandwidth Product fT − 210 − MHz

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1.0
r(t), NORMALIZED EFFECTIVE TRANSIENT

0.7 D = 0.5
0.5
0.3
THERMAL RESISTANCE

0.2
0.2 0.1
qJC(t) = (t) qJC
0.1 0.05 qJC = 100°C/W MAX
P(pk) qJA(t) = r(t) qJA
0.07 0.02
SINGLE PULSE qJA = 375°C/W MAX
0.05 t1 D CURVES APPLY FOR
0.01 POWER
0.03 SINGLE PULSE t2
PULSE TRAIN SHOWN
0.02 DUTY CYCLE, D = t1/t2
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
t, TIME (SECONDS)
Figure 1. Thermal Response

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 BC337, BC337−25, BC337−40

1000 1000
1.0 s 1.0 ms TJ = 135°C
VCE = 1 V
IC, COLLECTOR CURRENT (mA)

100 ms TJ = 25°C

hFE, DC CURRENT GAIN

dc
TC = 25°C

dc
100 TA = 25°C 100

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
10 10
1.0 3.0 10 30 100 0.1 1.0 10 100 1000
VCE, COLLECTOR-EMITTER VOLTAGE IC, COLLECTOR CURRENT (MA)

Figure 2. Active Region − Safe Operating Area Figure 3. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0 1.0
TJ = 25°C TA = 25°C
VBE(sat) @ IC/IB = 10
0.8 0.8
VBE(on) @ VCE = 1 V
V, VOLTAGE (VOLTS)
0.6 0.6

IC = 10 mA 100 mA 300 mA 500 mA

0.4 0.4

0.2 0.2
VCE(sat) @ IC/IB = 10
0 0
0.01 0.1 1 10 100 1 10 100 1000
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. Saturation Region Figure 5. “On” Voltages

100
θV, TEMPERATURE COEFFICIENTS (mV/°C)

+1

qVC for VCE(sat)

C, CAPACITANCE (pF)

0
Cib
10
-1

Cob
-2 qVB for VBE

1
1 10 100 1000 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Temperature Coefficients Figure 7. Capacitances

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 BC337, BC337−25, BC337−40

ORDERING INFORMATION
Device Marking Package Shipping†
BC337G 7 5000 Units / Bulk
BC337RL1G 7 2000 / Tape & Reel
BC337−025G 7−25 5000 Units / Bulk
BC337−25RL1G 7−25 2000 / Tape & Reel
TO−92
BC337−25RLRAG 7−25 (Pb−Free) 2000 / Tape & Reel
BC337−25ZL1G 7−25 2000 / Ammo Box
BC337−040G 7−40 5000 Units / Bulk
BC337−40RL1G 7−40 2000 / Tape & Reel
BC337−40ZL1G 7−40 2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−92 (TO−226) 1 WATT

CASE 29−10
SCALE 1:1 ISSUE A
DATE 08 MAY 2012

12 1
2
3 3
STRAIGHT LEAD BENT LEAD

A
NOTES:
STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
B 2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
R UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
P AND L. DIMENSIONS D AND J APPLY BETWEEN DI­
L MENSIONS L AND K MINIMUM. THE LEAD
F DIMENSIONS ARE UNCONTROLLED IN DIMENSION
K P AND BEYOND DIMENSION K MINIMUM.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
X X D C 0.125 0.165 3.18 4.19
G D 0.018 0.021 0.46 0.53
F 0.016 0.019 0.41 0.48
H J G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
V C J 0.018 0.024 0.46 0.61
SECTION X−X K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
1 N N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
N R 0.135 --- 3.43 ---
V 0.135 --- 3.43 ---

A
NOTES:
R BENT LEAD 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
B 2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
P AND L. DIMENSIONS D AND J APPLY BETWEEN
T DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
SEATING
PLANE K P AND BEYOND DIMENSION K MINIMUM.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
X X D C 0.125 0.165 3.18 4.19
G D 0.018 0.021 0.46 0.53
G 0.094 0.102 2.40 2.80
J J 0.018 0.024 0.46 0.61
V K 0.500 --- 12.70 ---
C N 0.080 0.105 2.04 2.66
SECTION X−X P --- 0.100 --- 2.54
R 0.135 --- 3.43 ---
1 N V 0.135 --- 3.43 ---

STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON52857E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−92 (TO−226) 1 WATT PAGE 1 OF 2

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

 TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE A
DATE 08 MAY 2012

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. EMITTER PIN 1. BASE PIN 1. ANODE PIN 1. CATHODE PIN 1. DRAIN
2. BASE 2. EMITTER 2. ANODE 2. CATHODE 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. CATHODE 3. ANODE 3. GATE

STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:

PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN PIN 1. BASE 1 PIN 1. CATHODE
2. SOURCE & SUBSTRATE 2. DRAIN 2. GATE 2. EMITTER 2. GATE
3. DRAIN 3. GATE 3. SOURCE & SUBSTRATE 3. BASE 2 3. ANODE

STYLE 11: STYLE 12: STYLE 13: STYLE 14: STYLE 15:
PIN 1. ANODE PIN 1. MAIN TERMINAL 1 PIN 1. ANODE 1 PIN 1. EMITTER PIN 1. ANODE 1
2. CATHODE & ANODE 2. GATE 2. GATE 2. COLLECTOR 2. CATHODE
3. CATHODE 3. MAIN TERMINAL 2 3. CATHODE 2 3. BASE 3. ANODE 2

STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. ANODE PIN 1. COLLECTOR PIN 1. ANODE PIN 1. GATE PIN 1. NOT CONNECTED
2. GATE 2. BASE 2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE 3. EMITTER 3. NOT CONNECTED 3. CATHODE 3. ANODE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25:
PIN 1. COLLECTOR PIN 1. SOURCE PIN 1. GATE PIN 1. EMITTER PIN 1. MT 1
2. EMITTER 2. GATE 2. SOURCE 2. COLLECTOR/ANODE 2. GATE
3. BASE 3. DRAIN 3. DRAIN 3. CATHODE 3. MT 2

STYLE 26: STYLE 27: STYLE 28: STYLE 29: STYLE 30:
PIN 1. VCC PIN 1. MT PIN 1. CATHODE PIN 1. NOT CONNECTED PIN 1. DRAIN
2. GROUND 2 2. SUBSTRATE 2. ANODE 2. ANODE 2. GATE
3. OUTPUT 3. MT 3. GATE 3. CATHODE 3. SOURCE

STYLE 31: STYLE 32: STYLE 33: STYLE 34: STYLE 35:
PIN 1. GATE PIN 1. BASE PIN 1. RETURN PIN 1. INPUT PIN 1. GATE
2. DRAIN 2. COLLECTOR 2. INPUT 2. GROUND 2. COLLECTOR
3. SOURCE 3. EMITTER 3. OUTPUT 3. LOGIC 3. EMITTER

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON52857E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−92 (TO−226) 1 WATT PAGE 2 OF 2

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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