BC307B

Amplifier Transistors
PNP Silicon

Features
• This is a Pb−Free Device* http://onsemi.com

COLLECTOR
1
MAXIMUM RATINGS
Rating Symbol Value Unit 2
BASE
Collector − Emitter Voltage VCEO −45 Vdc
Collector − Base Voltage VCBO −50 Vdc
3
Emitter − Base Voltage VEBO −5.0 Vdc EMITTER

Collector Current − Continuous IC −100 mAdc

Total Device Dissipation @ TA = 25°C PD 350 mW
Derate above 25°C 2.8 mW/°C

Total Device Dissipation @ TC = 25°C PD 1.0 W

Derate above 25°C 8.0 mW/°C TO−92
Operating and Storage Junction TJ, Tstg −55 to +150 °C CASE 29
Temperature Range 1 STYLE 17
2
3
THERMAL CHARACTERISTICS
BENT LEAD
Characteristic Symbol Max Unit TAPE & REEL
AMMO PACK
Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W
Thermal Resistance, Junction−to−Case RqJC 125 °C/W MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. BC30
7B
AYWW G
G

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping†

BC307BRL1G TO−92 2000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

*For additional information on our Pb−Free strategy and soldering details, please including part orientation and tape sizes, please
download the ON Semiconductor Soldering and Mounting Techniques refer to our Tape and Reel Packaging Specifications
Reference Manual, SOLDERRM/D. Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

May, 2011 − Rev. 5 BC307/D
 BC307B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO −45 − − Vdc
(IC = −2.0 mAdc, IB = 0)

Emitter −Base Breakdown Voltage V(BR)EBO −5.0 − − Vdc

(IE = −100 mAdc, IC = 0)
Collector−Emitter Leakage Current ICES
(VCES = −50 V, VBE = 0) − −0.2 −15 nAdc
(VCES = −50 V, VBE = 0) TA = 125°C − −0.2 −4.0 mA

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = −10 mAdc, VCE = −5.0 Vdc) − 150 −
(IC = −2.0 mAdc, VCE = −5.0 Vdc) 200 290 460
(IC = −100 mAdc, VCE = −5.0 Vdc) − 180 −
Collector −Emitter Saturation Voltage VCE(sat) Vdc
(IC = −10 mAdc, IB = −0.5 mAdc) − −0.10 −0.3
(IC = −10 mAdc, IB = see Note 1) − −0.30 −0.6
(IC = −100 mAdc, IB = −5.0 mAdc) − −0.25 −
Base −Emitter Saturation Voltage VBE(sat) Vdc
(IC = −10 mAdc, IB = −0.5 mAdc) − −0.7 −
(IC = −100 mAdc, IB = −5.0 mAdc) − −1.0 −
Base−Emitter On Voltage VBE(on) −0.55 −0.62 −0.7 Vdc
(IC = −2.0 mAdc, VCE = −5.0 Vdc)

DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product fT − 280 − MHz
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)

Common Base Capacitance Ccbo − − 6.0 pF

(VCB = −10 Vdc, IC = 0, f = 1.0 MHz)

Noise Figure NF − 2.0 10 dB

(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
1. IC = −10 mAdc on the constant base current characteristic, which yields the point IC = −11 mAdc, VCE = −1.0 V.

http://onsemi.com
2
 BC307B

TYPICAL CHARACTERISTICS

2.0 -1.0
VCE = -10 V TA = 25°C
hFE, NORMALIZED DC CURRENT GAIN

1.5 -0.9
TA = 25°C VBE(sat) @ IC/IB = 10
-0.8

V, VOLTAGE (VOLTS)
1.0 -0.7 VBE(on) @ VCE = -10 V
-0.6
0.7
-0.5
0.5 -0.4
-0.3

0.3 -0.2
VCE(sat) @ IC/IB = 10
-0.1
0.2 0
-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

400 10
300 Cib
7.0
200
C, CAPACITANCE (pF)

150 VCE = -10 V 5.0 TA = 25°C

TA = 25°C
100
80 3.0
60 Cob
2.0
40
30

20 1.0
-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Current−Gain — Bandwidth Product Figure 4. Capacitances

1.0 150
r b′, BASE SPREADING RESISTANCE (OHMS)
hob, OUTPUT ADMITTANCE (OHMS)

0.5 VCE = -10 V

f = 1.0 kHz 140
0.3 VCE = -10 V
TA = 25°C f = 1.0 kHz
130 TA = 25°C

0.1
120
0.05
0.03
110

0.01 100
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Output Admittance Figure 6. Base Spreading Resistance

http://onsemi.com
3
 BC307B

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B
R 1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE K MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19

X X D D 0.40 0.54
G 2.40 2.80
G J 0.39 0.50
J K 12.70 ---
N 2.04 2.66
V
C P 1.50 4.00
R 2.93 ---
SECTION X−X V 3.43 ---
1 N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative

http://onsemi.com BC307/D
4
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

ON Semiconductor:
BC307B BC307BG BC307BRL1 BC307BRL1G BC307BZL1 BC307BZL1G BC307C BC307CG