BC182, BC182B

Amplifier Transistors
NPN Silicon

Features
• These are Pb−Free Devices* http://onsemi.com

COLLECTOR
1

2
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit 3
EMITTER
Collector −Emitter Voltage VCEO 50 Vdc
Collector −Base Voltage VCBO 60 Vdc
Emitter −Base Voltage VEBO 6.0 Vdc
TO−92
Collector Current − Continuous IC 100 mAdc
CASE 29
Total Device Dissipation @ TA = 25°C PD 350 mW STYLE 17
Derate above 25°C 2.8 mW/°C

Total Device Dissipation @ TC = 25°C PD 1.0 W 12 1

2
Derate above 25°C 8.0 mW/°C 3 3
STRAIGHT LEAD BENT LEAD
Operating and Storage Junction TJ, Tstg −55 to +150 °C
BULK PACK TAPE & REEL
Temperature Range
AMMO PACK
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W
Thermal Resistance, Junction−to−Case RqJC 125 °C/W
BC
Stresses exceeding Maximum Ratings may damage the device. Maximum 182B
Ratings are stress ratings only. Functional operation above the Recommended AYWW G
Operating Conditions is not implied. Extended exposure to stresses above the G
Recommended Operating Conditions may affect device reliability.

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping†
BC182G TO−92 5000 Units / Bulk
(Pb−Free)
BC182BG TO−92 5000 Units / Bulk
(Pb−Free)

BC182BRL1G TO−92 2000 / Tape & Reel

(Pb−Free)
†For information on tape and reel specifications,
*For additional information on our Pb−Free strategy and soldering details, please
including part orientation and tape sizes, please
download the ON Semiconductor Soldering and Mounting Techniques
refer to our Tape and Reel Packaging Specifications
Reference Manual, SOLDERRM/D.
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

March, 2007 − Rev. 5 BC182/D
 BC182, BC182B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO 50 − − V
(IC = 2.0 mA, IB = 0)

Collector −Base Breakdown Voltage V(BR)CBO 60 − − V

(IC = 10 mA, IE = 0)
Emitter −Base Breakdown Voltage V(BR)EBO 6.0 − − V
(IE = 100 mA, IC = 0)
Collector Cutoff Current ICBO − 0.2 15 nA
(VCB = 50 V, VBE = 0)

Emitter−Base Leakage Current IEBO − − 15 nA

(VEB = 4.0 V, IC = 0)

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 10 mA, VCE = 5.0 V) BC182 40 − −

(IC = 2.0 mA, VCE = 5.0 V) BC182 120 − 500

BC182B 180 − 500
(IC = 100 mA, VCE = 5.0 V) BC182 80 − −

Collector −Emitter On Voltage VCE(sat) V

(IC = 10 mA, IB = 0.5 mA) − 0.07 0.25
(IC = 100 mA, IB = 5.0 mA) (Note 1) − 0.2 0.6
Base −Emitter Saturation Voltage VBE(sat) − − 1.2 V
(IC = 100 mA, IB = 5.0 mA) (Note 1)

Base−Emitter On Voltage VBE(on) V

(IC = 100 mA, VCE = 5.0 V) − 0.5 −
(IC = 2.0 mA, VCE = 5.0 V) 0.55 0.62 0.7
(IC = 100 mA, VCE = 5.0 V) (Note 1) − 0.83 −
DYNAMIC CHARACTERISTICS
Current −Gain — Bandwidth Product fT MHz
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) − 100 −
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 150 200 −
Common Base Output Capacitance Cob − − 5.0 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)

Common Base Input Capacitance Cib − 8.0 − pF

(VEB = 0.5 V, IC = 0, f = 1.0 MHz)

Small−Signal Current Gain hfe −

(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC182 125 − 500
BC182B 240 − 500
Noise Figure NF dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz) − 2.0 10
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.

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 BC182, BC182B

2.0 1.0
VCE = 10 V TA = 25°C
hFE, NORMALIZED DC CURRENT GAIN
1.5 0.9
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
1.0 0.7
VBE(on) @ VCE = 10 V
0.8 0.6

0.6 0.5
0.4
0.4 0.3

0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 1. “Saturation” and “On” Voltages

f T, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

400 10
300
7.0
200 TA = 25°C
C, CAPACITANCE (pF)
5.0 Cib

100 VCE = 10 V
80 TA = 25°C 3.0
Cob
60
2.0
40
30

20 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitances

170
r b, BASE SPREADING RESISTANCE (OHMS)

160

150
VCE = 10 V
f = 1.0 kHz
140
TA = 25°C

130

120
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mAdc)

Figure 4. Base Spreading Resistance

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 BC182, BC182B

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
BULK PACK 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
D G 0.045 0.055 1.15 1.39
X X
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
V C N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
SECTION X−X R 0.115 −−− 2.93 −−−
1 N V 0.135 −−− 3.43 −−−

NOTES:
A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER
R
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
SEATING MILLIMETERS
PLANE K
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D D 0.40 0.54
X X G 2.40 2.80
G J 0.39 0.50
J K 12.70 −−−
N 2.04 2.66
V P 1.50 4.00
C
R 2.93 −−−
SECTION X−X V 3.43 −−−
1 N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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