*For additional information on our Pb−Free strategy
2N5457, 2N5458 and soldering details, please download the ON
Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred Device
JFETs − General Purpose
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
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• N−Channel for Higher Gain
1 DRAIN
• Drain and Source Interchangeable
• High AC Input Impedance
3
• High DC Input Resistance GATE
• Low Transfer and Input Capacitance
• Low Cross−Modulation and Intermodulation Distortion 2 SOURCE
• Unibloc Plastic Encapsulated Package
MARKING
• Pb−Free Packages are Available* DIAGRAM
MAXIMUM RATINGS 2N
Rating Symbol Value Unit 545x
TO−92 AYWW
Drain−Source Voltage VDS 25 Vdc CASE 29
STYLE 5
Drain−Gate Voltage VDG 25 Vdc 12
3
Reverse Gate−Source Voltage VGSR −25 Vdc
Gate Current IG 10 mAdc
Total Device Dissipation @ TA = 25°C PD 310 mW
Derate above 25°C 2.82 mW/°C
Operating Junction Temperature 135 °C 2N545x = Device Code
TJ
x = 7 or 8
Storage Temperature Range Tstg −65 to +150 °C A = Assembly Location
Stresses exceeding Maximum Ratings may damage the device. Maximum Y = Year
Ratings are stress ratings only. Functional operation above the WW = Work Week
Recommended Operating Conditions is not implied. Extended exposure to = Pb−Free Package
stresses above the Recommended Operating Conditions may affect device (Note: Microdot may be in either location)
reliability.
ORDERING INFORMATION
Device Package Shipping
2N5457 TO−92 1000 Units/Box
2N5457G TO−92 1000 Units/Box
(Pb−Free)
2N5458 TO−92 1000 Units/Box
2N5457, 2N5458
2N5458G TO−92 1000 Units/Box
(Pb−Free)
Preferred devices are recommended choices for future
use and best overall value.
© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:
March, 2006 − Rev. 5 2N5457/D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage V(BR)GSS
(IG = −10 Adc, VDS = 0) −25 − − Vdc
Gate Reverse Current IGSS
(VGS = −15 Vdc, VDS = 0) − − −1.0 nAdc
(VGS = −15 Vdc, VDS = 0, TA = 100°C) − − −200
Gate−Source Cutoff Voltage 2N5457 VGS(off) −0.5 − −6.0 Vdc
(VDS = 15 Vdc, iD = 10 nAdc) 2N5458 −1.0 − −7.0
Gate−Source Voltage VGS
(VDS = 15 Vdc, iD = 100 Adc) 2N5457 − −2.5 − Vdc
(VDS = 15 Vdc, iD = 200 Adc) 2N5458 − −3.5 −
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 1) 2N5457 IDSS 1.0 3.0 5.0 mAdc
(VDS = 15 Vdc, VGS = 0) 2N5458 2.0 6.0 9.0
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1) 2N5457 |Yfs| 1000 3000 5000 mhos
(VDS = 15 Vdc, VGS = 0, f = 1 kHz) 2N5458 1500 4000 5500
Output Admittance Common Source (Note 1) |Yos|
(VDS = 15 Vdc, VGS = 0, f = 1 kHz) − 10 50 mhos
Input Capacitance Ciss
(VDS = 15 Vdc, VGS = 0, f = 1 kHz) − 4.5 7.0 pF
Reverse Transfer Capacitance Crss
(VDS = 15 Vdc, VGS = 0, f = 1 kHz) − 1.5 3.0 pF
1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
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2
2N5457, 2N5458
TYPICAL CHARACTERISTICS
For 2N5457 Only
14
VDS = 15 V
12
VGS = 0
NF, NOISE FIGURE (dB)
f = 1 kHz
10
0
0.001 0.01 0.1 1.0 10
RS, SOURCE RESISTANCE (Megohms)
Figure 1. Noise Figure versus Source Resistance
1.2 1.2
VGS(off) −1.2 V VGS = 0 V VGS(off) −1.2 V
1.0 1.0
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
0.8 −0.2 V 0.8
VDS = 15 V
0.6 0.6
−0.4 V
0.4 0.4
−0.6 V
0.2 −0.8 V 0.2
−1.0 V
0 0
0 10 15 20 25 −1.2 −0.8 −0.4 0
VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure VGS, GATE−SOURCE VOLTAGE (VOLTS)
2. Typical Drain Characteristics Figure 3. Common Source Transfer Characteristics
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3
2N5457, 2N5458
TYPICAL CHARACTERISTICS For 2N5457 Only
5 5
VGS = 0 V VGS(off) −3.5 V
I D, DRAIN CURRENT (mA)
I D, DRAIN CURRENT (mA)
4 4
VGS(off) −3.5 V
3 −1 V 3
VDS = 15 V
2 2
−2 V
1 1
−3 V
0 0
0 5 10 15 20 25 −5 −4 −3 −2 −1 0
VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure VGS, GATE−SOURCE VOLTAGE (VOLTS)
4. Typical Drain Characteristics Figure 5. Common Source Transfer
Characteristics
10 10
VGS(off) −5.8 V
VGS = 0 V
8 8
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
VGS(off) −5.8 V
−1 V
6 6
VDS = 15 V
−2 V
4 4
−3 V
2 2
−4 V
−5 V
0 0
0 5 10 15 20 25 −7 −6 −5 −4 −3 −2 −1 0
VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure VGS, GATE − SOURCE VOLTAGE (VOLTS)
6. Typical Drain Characteristics Figure 7. Common Source Transfer
Characteristics
NOTE: Note: Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under
dc conditions, self heating in higher IDSS units reduces IDSS.
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4
2N5457, 2N5458
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
B
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION:
INCH.
3. CONTOUR OF PACKAGE BEYOND
DI INCHES MILLIMETERS
M MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
J
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
SECTION K 0.500 −−− 12.70 −−−
X−X L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
TYLE 5:
PIN 1. DRAIN
2. SOURCE
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5
3. GATE
2N5457, 2N5458
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