0% found this document useful (0 votes)
196 views8 pages

JFET Amplifier Specs for Engineers

This document provides information on the 2N3819 JFET VHF/UHF amplifier: 1) It is an N-channel depletion mode JFET intended for use as a VHF/UHF amplifier with maximum ratings including a drain-source voltage of 25V and drain current of 100mA. 2) The device has typical small-signal characteristics including a forward transfer admittance of 5.6mmhos and cutoff frequency of 700MHz at a drain voltage of 15V and zero gate voltage. 3) Graphs show the input and reverse transfer admittances over frequency, demonstrating the device's suitability for high frequency amplification applications.

Uploaded by

Jayson
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
196 views8 pages

JFET Amplifier Specs for Engineers

This document provides information on the 2N3819 JFET VHF/UHF amplifier: 1) It is an N-channel depletion mode JFET intended for use as a VHF/UHF amplifier with maximum ratings including a drain-source voltage of 25V and drain current of 100mA. 2) The device has typical small-signal characteristics including a forward transfer admittance of 5.6mmhos and cutoff frequency of 700MHz at a drain voltage of 15V and zero gate voltage. 3) Graphs show the input and reverse transfer admittances over frequency, demonstrating the device's suitability for high frequency amplification applications.

Uploaded by

Jayson
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 8

2N3819

JFET VHF/UHF Amplifier


N–Channel – Depletion

MAXIMUM RATINGS http://onsemi.com


Rating Symbol Value Unit
Drain–Source Voltage VDS 25 Vdc 3 DRAIN
Drain–Gate Voltage VDG 25 Vdc
Gate–Source Voltage VGS 25 Vdc
2
Drain Current ID 100 mAdc
GATE
Forward Gate Current IG(f) 10 mAdc
Total Device Dissipation PD 1 SOURCE
@ TA = 25°C 350 mW
Derate above 25°C 2.8 mW/°C
Storage Channel Temperature Range Tstg –65 to +150 °C

1
2
3
TO–92
CASE 29
STYLE 22

MARKING DIAGRAM

2N
3819
YWW

2N3819 = Device Code


Y = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

2N3819 TO–92 5000 Units/Box

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:


March, 2002 – Rev. 0 2N3819/D
2N3819

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)


Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Gate–Source Breakdown Voltage V(BR)GSS 25 – – Vdc
(IG = 1.0 µAdc, VDS = 0)
Gate–Source VGS 0.5 – 7.5 Vdc
(VDS = 15 Vdc, ID = 200 µAdc)
Gate–Source Cutoff Voltage VGS(off) – – –8.0 Vdc
(VDS = 15 Vdc, ID = 10 nAdc)
Gate Reverse Current IGSS – – 210 nAdc
(VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current IDSS 2.0 – 20 mAdc
(VDS = 15 Vdc, VGS = 0)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yfs 3.0 – 6.5 mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yos – 40 – mhos
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yfs – 5.6 – mmhos
Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yrs – 1.0 – mmhos
Input Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc) Ciss – 3.0 – pF
Reverse Transfer Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) Crss – 0.7 – pF
Output Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) Coss – 0.9 – pF
Cut–off Frequency (Note 1) (VDS = 15 Vdc, VGS = 0) F(Yfs) – 700 – MHz
1. The frequency at which gfs is 0.7 of its value at 1 kHz.

http://onsemi.com
2
2N3819

COMMON SOURCE CHARACTERISTICS


ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)

30 5.0

grs , REVERSE TRANSADMITTANCE (mmhos)


brs , REVERSE SUSCEPTANCE (mmhos)
20 3.0
bis, INPUT SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)

2.0
10 bis @ IDSS
brs @ IDSS
7.0 1.0
5.0
0.7
0.25 IDSS
3.0 gis @ IDSS 0.5
2.0 0.3
gis @ 0.25 IDSS
0.2
1.0
0.7
0.1
0.5 grs @ IDSS, 0.25 IDSS
bis @ 0.25 IDSS 0.07
0.3 0.05
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs)

20 10
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)

5.0
bos, OUTPUT SUSCEPTANCE (mhos)
gos, OUTPUT ADMITTANCE (mhos)

10
7.0 gfs @ IDSS 2.0 bos @ IDSS and 0.25 IDSS
5.0
1.0
3.0 gfs @ 0.25 IDSS
0.5
2.0
0.2 gos @ IDSS
1.0 |bfs| @ IDSS 0.1
0.7
0.5 0.05
|bfs| @ 0.25 IDSS
gos @ 0.25 IDSS
0.3 0.02
0.2 0.01
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 7001000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos)

http://onsemi.com
3
2N3819

COMMON SOURCE CHARACTERISTICS


S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
100 ID = 0.25 IDSS
40° 1.0 320° 40° 0.4 32
100 200
200 300
0.9 0.3
50° 400 310° 50° ID = IDSS, 0.25 IDSS 31
300 900
0.8 500 800 0.2
ID = IDSS
60° 400 300° 60° 30
700
600 600

70° 0.7 500 290° 70° 500 0.1 29


700 400
600
80° 280° 80° 300 28
0.6 700 800 0.0
800 200
90° 900 270° 90° 27
900 100

100° 260° 100° 26

110° 250° 110° 25

120° 240° 120° 24

130° 230° 130° 23

140° 220° 140° 22

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 5. S11s Figure 6. S12s


30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
100 200
300 ID = 0.25 IDSS
40° 320° 40° 1.0 32
100 200 400
500
300 600
400
0.6 0.9 500 700
50° 310° 50° 600 800 31
ID = IDSS 700
800 900
0.5 0.8 900
60° 300° 60° 30

900 0.4 0.7


70° 290° 70° 29
800
900
80° 700 800 280° 80° 28
0.3 0.6
700 ID = 0.25 IDSS
90° 600 270° 90° 27
600
500 500 0.3
100° 260° 100° 26
400 100
400
110° 300 200 250° 110° 25
0.4
300
120° 240° 120° 24
ID = IDSS 200 0.5
100

130° 230° 130° 23


0.6

140° 220° 140° 22

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 7. S21s Figure 8. S22s

http://onsemi.com
4
2N3819

COMMON GATE CHARACTERISTICS


ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)

20 0.5

grg , REVERSE TRANSADMITTANCE (mmhos)


brg , REVERSE SUSCEPTANCE (mmhos)
0.3
big, INPUT SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)

10
0.2 brg @ IDSS
7.0 gig @ IDSS
5.0
0.1
3.0 grg @ 0.25 IDSS 0.07
2.0 0.05
0.03 0.25 IDSS
1.0
0.02
0.7
0.5 big @ IDSS
big @ 0.25 IDSS 0.01 gig @ IDSS, 0.25 IDSS
0.3 0.007
0.2 0.005
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)

10 1.0
gfg @ IDSS
bfg , FORWARD SUSCEPTANCE (mmhos)

7.0 0.7 bog @ IDSS, 0.25 IDSS


bog, OUTPUT SUSCEPTANCE (mmhos)
gog, OUTPUT ADMITTANCE (mmhos)

5.0 0.5
3.0 gfg @ 0.25 IDSS 0.3
2.0 0.2

1.0 0.1
0.7 0.07
0.5 0.05 gog @ IDSS
bfg @ IDSS
0.3 0.03
0.2 brg @ 0.25 IDSS 0.02
gog @ 0.25 IDSS
0.1 0.01
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog)

http://onsemi.com
5
2N3819

COMMON GATE CHARACTERISTICS


S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°

40° 0.7 320° 40° 0.04 32


ID = 0.25 IDSS
100 200
300
0.6 400 0.03
50° 100 500 310° 50° 31
200
300 600
0.5 0.02
400 700
60° 300° 60° 30
500
ID = IDSS 800
0.4 600 0.01
70° 290° 70° 29
900
700
80° 280° 80° 28
0.3 800 0.0
100
90° 900 270° 90° 27
500
600
100° 260° 100° 600 ID = 0.25 IDSS 26
ID = IDSS
110° 250° 110° 700 25
700 0.01
800
120° 240° 120° 800 24
0.02
900
130° 230° 130° 23
900 0.03

140° 220° 140° 0.04 22

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 13. S11g Figure 14. S12g


30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
1.5 300
40° 0.5 320° 40° 1.0 500 32
200
400 700
100 600
100
0.4 0.9 800 900
50° ID = IDSS 310° 50° 31
100 ID = IDSS, 0.25 IDSS

0.3 0.8
60° 300° 60° 30

0.2 0.7
70° ID = 0.25 IDSS 290° 70° 29

80° 280° 80° 28


0.1 0.6
900
90° 270° 90° 27
900
100° 260° 100° 26

110° 250° 110° 25

120° 240° 120° 24

130° 230° 130° 23

140° 220° 140° 22

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 15. S21g Figure 16. S22g

http://onsemi.com
6
2N3819

PACKAGE DIMENSIONS

TO–92 (TO–226)
CASE 29–11
ISSUE AL

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X–X
1 R 0.115 --- 2.93 ---
N V 0.135 --- 3.43 ---
N STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN

http://onsemi.com
7
2N3819

ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right
to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION


Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center
Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
ON Semiconductor Website: http://onsemi.com
Email: ONlit@hibbertco.com
For additional information, please contact your local
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
Sales Representative.

http://onsemi.com 2N3819/D
8

You might also like